Embodiments relate to the field of semiconductors, and provide a semiconductor structure and a method for fabricating the same. The semiconductor structure includes a first wafer and a second wafer. A surface of the first wafer has a first electrode plate, a first dielectric layer and a first dummy pad stacked in sequence to constitute a capacitor; and the surface of the first wafer further has a first functional pad, and the first functional pad and the first dummy pad are arranged on a same layer. The second wafer is bonded to the first wafer, and a surface of the second wafer has a second dummy pad and a second functional pad arranged on a same layer. The first dummy pad is bonded to the second dummy pad, and the first functional pad is bonded to the second functional pad.

A device and method of manufacture is provided that utilize a dummy pad feature adjacent contact pads. The contact pads may be contact pads in an integrated fan-out package in which a molding compound is placed along sidewalls of a die and the contact pads extend over the die and the molding compound. The contact pads are electrically coupled to the die using one or more redistribution layers. The dummy pad features are electrically isolated from the contact pads. In some embodiments, the dummy pad features partially encircle the contact pads and are located in a corner region of the molding compound, a corner region of the die, and/or an interface region between an edge of the die and the molding compound.

A semiconductor structure includes: a substrate, a conductive pattern layer, a support layer and a re-distribution layer. The conductive pattern layer is arranged on the substrate. The support layer covers the conductive pattern layer and is provided with a via hole. The re-distribution layer is arranged on the support, and the re-distribution layer includes a test pad at least located in the via hole. The test pad includes a plurality of test contact portions and a plurality of recesses that are arranged alternately and connected mutually, and the recess is in corresponding contact with a portion of the conductive pattern layer in the via hole.

A semiconductor device has a semiconductor die. A first contact pad, second contact pad, and third contact pad are formed over the semiconductor die. An under-bump metallization layer (UBM) is formed over the first contact pad, second contact pad, and third contact pad. The UBM electrically connects the first contact pad to the second contact pad. The third contact pad is electrically isolated from the UBM. Conductive traces can be formed extending between the first contact pad and second contact pad under the UBM. A fourth contact pad can be formed over the first contact pad and a fifth contact pad can be formed over the second contact pad. The UBM is then formed over the fourth and fifth contact pads.

A semiconductor package includes a second semiconductor die stacked on a first semiconductor die. The first semiconductor die includes a first contact pad connected to a first integrated circuit, and includes a second contact pad connected to a third contact pad by a first interconnection line. The second semiconductor die includes a fourth contact pad connected to the third contact pad and connected to a second integrated circuit. A first bonding wire is connected to the first contact pad, and a second bonding wire is connected to the second contact pad.

A structure and a method of forming are provided. The structure includes a first dielectric layer overlying a first substrate. A first connection pad is disposed in a top surface of the first dielectric layer and contacts a first redistribution line. A first dummy pad is disposed in the top surface of the first dielectric layer, the first dummy pad contacting the first redistribution line. A second dielectric layer overlies a second substrate. A second connection pad and a second dummy pad are disposed in the top surface of the second dielectric layer, the second connection pad bonded to the first connection pad, and the first dummy pad positioned in a manner that is offset from the second dummy pad so that the first dummy pad and the second dummy pad do not contact each other.

A semiconductor device includes a MOSFET including a PN junction diode. A unipolar device is connected in parallel to the MOSFET and has two terminals. A first wire connects the PN junction diode to one of the two terminals of the unipolar device. A second wire connects the one of the two terminals of the unipolar device to an output line, so that the output line is connected to the MOSFET and the unipolar device via the first wire and the second wire. In one embodiment the connection of the first wire to the diode is with its anode, and in another the connection is with the cathode.

A semiconductor package includes a first semiconductor chip including a first bonding pad on a first surface of a first substrate, a first through electrode penetrating through the first substrate and electrically connected to the first bonding pad, a first recess with a desired depth in the first substrate from a second surface of the first substrate and exposing an end portion of the first through electrode, and a second bonding pad in the first recess and electrically connected to the first through electrode, a second semiconductor chip stacked on the second surface of the first substrate and including a third bonding pad on a third surface of a second substrate, and a conductive connection member between the second bonding pad and the third bonding pad. At least a portion of the conductive connection member may be in the first recess.

A semiconductor structure and a method for forming a semiconductor structure are provided. The semiconductor structure includes a substrate having an isolation ring extending in the direction substantially parallel to the surface of the substrate, an active region over the substrate and laterally enclosed by the isolation ring, a seal ring structure over the substrate, the seal ring structure laterally enclosing the active region and including at least a wiring layer and at least a via layer, and an encapsulant material laterally enclosing the seal ring structure.

A semiconductor package includes a first semiconductor chip mounted on a substrate, a first conductive post disposed on the substrate and spaced apart from the first semiconductor chip, a second semiconductor chip disposed on the first semiconductor chip and the first conductive post, and a mold layer on the substrate that covers the first and second semiconductor chips and the first conductive post. The second semiconductor chip is supported on the first semiconductor chip by a first dummy solder terminal provided between the first and second semiconductor chips, and is coupled to the first conductive post by a first signal solder terminal provided between the first conductive post and the second semiconductor chip. The first dummy solder terminal is in direct contact with a top surface of the first semiconductor chip, and is electrically disconnected from the second semiconductor chip.