A chip includes a semiconductor substrate, integrated circuits with at least portions in the semiconductor substrate, and a surface dielectric layer over the integrated circuits. A plurality of metal pads is distributed substantially uniformly throughout substantially an entirety of a surface of the chip. The plurality of metal pads has top surfaces level with a top surface of the surface dielectric layer. The plurality of metal pads includes active metal pads and dummy metal pads. The active metal pads are electrically coupled to the integrated circuits. The dummy metal pads are electrically decoupled from the integrated circuits.

A chip structure is provided. The chip structure includes a substrate, a redistribution layer over the substrate, a bonding pad over the redistribution layer, a shielding pad over the redistribution layer and surrounding the bonding pad, an insulating layer over the redistribution layer and the shielding pad, and a bump over the bonding pad and the insulating layer. The insulating layer includes a first part and a second part surrounded by the first part, the first part has first thickness, the second part has a second thickness, and the first thickness and the second thickness are different.

An array substrate, a method for fabricating the same and a display device are disclosed. The array substrate includes: a gate electrode of a TFT and a gate insulation layer sequentially formed on a base substrate; a semiconductor active layer, an etch stop layer and a source electrode and a drain electrode of the TFT sequentially formed on a part of the gate insulation layer that corresponds to the gate electrode of the TFT, the source and drain electrodes of the TFT are respectively in contact with the semiconductor active layer by way of via holes. The array substrate further includes: a first insulation layer formed between the gate electrode of the TFT and the gate insulation layer and the gate electrode is in contact with the gate insulation layer at a channel region of the TFT between the source electrode and the drain electrode of the TFT.

A chip includes a semiconductor substrate, integrated circuits with at least portions in the semiconductor substrate, and a surface dielectric layer over the integrated circuits. A plurality of metal pads is distributed substantially uniformly throughout substantially an entirety of a surface of the chip. The plurality of metal pads has top surfaces level with a top surface of the surface dielectric layer. The plurality of metal pads includes active metal pads and dummy metal pads. The active metal pads are electrically coupled to the integrated circuits. The dummy metal pads are electrically decoupled from the integrated circuits.

A chip includes a semiconductor substrate, integrated circuits with at least portions in the semiconductor substrate, and a surface dielectric layer over the integrated circuits. A plurality of metal pads is distributed substantially uniformly throughout substantially an entirety of a surface of the chip. The plurality of metal pads has top surfaces level with a top surface of the surface dielectric layer. The plurality of metal pads includes active metal pads and dummy metal pads. The active metal pads are electrically coupled to the integrated circuits. The dummy metal pads are electrically decoupled from the integrated circuits.

A semiconductor chip includes a semiconductor substrate that includes an upper surface and a lower surface opposite to the upper surface, a center pad disposed on a center portion of the upper surface and an edge portion disposes on an outer portion of the upper surface; a wiring structure that includes a wiring insulating layer disposed on a lower surface of the semiconductor substrate and a wiring pattern disposed in the wiring insulating layer and electrically connected to the semiconductor substrate; a first bump pad disposed on a first surface of the wiring structure and electrically connected to the wiring pattern; and a first connection bump that connects the first bump pad to an external device. The center pad has a regular octagon shape, and the edge pad has an extended octagon shape formed by extending squares from four non-continuous sides of a regular octagon.

The invention relates to a chip card manufacturing method. According to this method, there are produced on the one hand, a module including a substrate supporting contacts on one face, and bonding pads on the other, on the other hand, an antenna on a support. The ends of the antenna are linked to lands of connection lands receiving a drop of soldering material on a connection portion. In order to make the soldered electrical connection between the module and the antenna reliable, the bonding pads extend over a zone covering a surface area less than that of the connection portions. The invention relates also to a chip card whose module includes bonding pads extending over a zone covering a surface area less than that of the connection portions.

A first semiconductor device includes: a first wiring layer including a first interlayer insulating film, a first electrode pad, and a first dummy electrode, the first electrode pad being embedded in the first interlayer insulating film and having one surface located on same plane as one surface of the first interlayer insulating film, and the first dummy electrode being embedded in the first interlayer insulating film, having one surface located on same plane as the one surface of the first interlayer insulating film, and being disposed around the first electrode pad; and a second wiring layer including a second interlayer insulating film, a second electrode pad, and a second dummy electrode, the second electrode pad being embedded in the second interlayer insulating film, having one surface located on same surface as one surface of the second interlayer insulating film, and being bonded to the first electrode pad, and the second dummy electrode having one surface located on same plane as the surface located closer to the first interlayer insulating film of the second interlayer insulating film, being disposed around the second electrode pad, and being bonded to the first dummy electrode. A second semiconductor device includes: a first semiconductor section including a first electrode, the first electrode being formed on a surface located closer to a bonding interface and extending in a first direction; and a second semiconductor section including a second electrode and disposed to be bonded to the first semiconductor section at the bonding interface, the second electrode being bonded to the first electrode and extending in a second direction that intersects with the first direction.

A chip includes a semiconductor substrate, integrated circuits with at least portions in the semiconductor substrate, and a surface dielectric layer over the integrated circuits. A plurality of metal pads is distributed substantially uniformly throughout substantially an entirety of a surface of the chip. The plurality of metal pads has top surfaces level with a top surface of the surface dielectric layer. The plurality of metal pads includes active metal pads and dummy metal pads. The active metal pads are electrically coupled to the integrated circuits. The dummy metal pads are electrically decoupled from the integrated circuits.

A first semiconductor device includes: a first wiring layer including a first interlayer insulating film, a first electrode pad, and a first dummy electrode, the first electrode pad being embedded in the first interlayer insulating film and having one surface located on same plane as one surface of the first interlayer insulating film, and the first dummy electrode being embedded in the first interlayer insulating film, having one surface located on same plane as the one surface of the first interlayer insulating film, and being disposed around the first electrode pad; and a second wiring layer including a second interlayer insulating film, a second electrode pad, and a second dummy electrode, the second electrode pad being embedded in the second interlayer insulating film, having one surface located on same surface as one surface of the second interlayer insulating film, and being bonded to the first electrode pad, and the second dummy electrode having one surface located on same plane as the surface located closer to the first interlayer insulating film of the second interlayer insulating film, being disposed around the second electrode pad, and being bonded to the first dummy electrode. A second semiconductor device includes: a first semiconductor section including a first electrode, the first electrode being formed on a surface located closer to a bonding interface and extending in a first direction; and a second semiconductor section including a second electrode and disposed to be bonded to the first semiconductor section at the bonding interface, the second electrode being bonded to the first electrode and extending in a second direction that intersects with the first direction.