Various embodiments of the present disclosure are directed towards an integrated circuit (IC) device including a dielectric structure on a semiconductor substrate. A plurality of active bond pads are disposed in the dielectric structure. A plurality of auxiliary bond pads are disposed in the dielectric structure and are laterally offset from the plurality of active bond pads by a first distance greater than a pitch of the plurality of active bond pads. The active bond pads are respectively electrically coupled to a corresponding auxiliary bond pad in the plurality of auxiliary bond pads.