A semiconductor structure comprises: a substrate, an alignment mark, pillars, and a seal wall. The alignment mark is adjacent to a surface of the substrate. The pillars protrudes from the substrate. The seal wall protrudes from the surface of the substrate and surrounding the alignment mark. The seal wall is between the pillars and the alignment mark. The pillars is configured into at least two different groups with different average heights. The seal wall around the alignment mark can prevent the alignment mark from the coverage of the flux. Further, the seal wall can be formed with pillars at the same time, and the increased cost is limited.

Described is an apparatus which comprises: a die with a first side; a plurality of metal bumps on the first side of the die; a plurality of solders disposed on the plurality of metal bumps; and a patterned printable resist disposed next to at least one of the solders of the plurality of solders. Described is a method which comprises: printing a photoresist ink onto a bumped wafer surface; thermally or Ultra-Violet curing the photoresist ink; and printing or electroplating solder(s) onto the bumped wafer surface. Described is a machine readable storage media having one or more instructions that when executed cause a machine to perform an operations according to the method described above.

A solder connection may be surrounded by a solder locking layer (1210, 2210) and may be recessed in a hole (1230) in that layer. The recess may be obtained by evaporating a vaporizable portion (1250) of the solder connection. Other features are also provided.

A solder connection may be surrounded by a solder locking layer (1210, 2210) and may be recessed in a hole (1230) in that layer. The recess may be obtained by evaporating a vaporizable portion (1250) of the solder connection. Other features are also provided.

A semiconductor device and method that comprise a first dielectric layer over a encapsulant that encapsulates a via and a semiconductor die is provided. A redistribution layer is over the first dielectric layer, and a second dielectric layer is over the redistribution layer, and the second dielectric layer comprises a low-temperature polyimide material.

A method of fabricating a semiconductor device is provided. The method includes providing a die stacking unit that includes a plurality of dies stacked on each other, and a plurality of conductive joints connected between each two adjacent dies. The method includes providing a plurality of dummy micro bumps and dummy pads between the two adjacent dies and between the conductive joints. The dummy micro bumps and the dummy pads are connected to one of the two adjacent dies but not to the other, and the dummy micro bumps are formed on some of the dummy pads but not on all of the dummy pads. The method includes dispensing an underfill material into gaps between the plurality of dies, the conductive joints, the dummy micro bumps, and the dummy pads.

A method for manufacturing a metal bump device includes providing a substrate structure including a substrate and a metal layer having a recess on the substrate, forming a metal bump on the recess of the metal layer using a ball placement process, and forming a solder paste on the metal bump using a printing process. The manufacturing time is shorter, the manufacturing efficiency is higher, and the manufacturing cost is lower than conventional manufacturing methods.

Embodiments of the present disclosure are directed toward formation of solder and copper interconnect structures and associated techniques and configurations. In one embodiment, a method includes providing an integrated circuit (IC) substrate and depositing a solderable material on the IC substrate using an ink deposition process, a binder printing system, or a powder laser sintering system. In another embodiment, a method includes providing an integrated circuit (IC) substrate and depositing a copper powder on the IC substrate using an additive process to form a copper interconnect structure. Other embodiments may be described and/or claimed.

In some embodiments, to increase the height-to-pitch ratio of a solder connection that connects different structures with one or more solder balls, only a portion of a solder ball's surface is melted when the connection is formed on one structure and/or when the connection is being attached to another structure. In some embodiments, non-solder balls are joined by an intermediate solder ball (140i). A solder connection may be surrounded by a solder locking layer (1210) and may be recessed in a hole (1230) in that layer. Other features are also provided.

In some embodiments, to increase the height-to-pitch ratio of a solder connection that connects different structures with one or more solder balls, only a portion of a solder ball's surface is melted when the connection is formed on one structure and/or when the connection is being attached to another structure. In some embodiments, non-solder balls are joined by an intermediate solder ball (140i). A solder connection may be surrounded by a solder locking layer (1210) and may be recessed in a hole (1230) in that layer. Other features are also provided.