A semiconductor package structure includes a substrate, a semiconductor chip, and a solder material. The substrate includes an insulating layer, a conductive circuit layer, and a conductive bump. The conductive circuit layer is recessed from a top surface of the insulating layer. The conductive circuit layer includes a pad, and a side surface of the pad extends along a side surface of the insulating layer. The conductive bump is disposed on the pad. A side surface of the conductive bump, a top surface of the pad and the side surface of the insulating layer together define an accommodating space. A solder material electrically connects the conductive bump and the semiconductor chip. A portion of the solder material is disposed in the accommodating space.

A system of producing metal cored solder structures on a substrate includes: a decal having a plurality of apertures, the apertures being tapered from a top surface to a bottom surface of the decal; a carrier configured for positioning beneath the bottom of the decal, the carrier having cavities in a top surface and the cavities located in alignment with the apertures of the decal; the decal being configured for positioning on the carrier having the decal bottom surface in contact with the carrier top surface to form feature cavities defined by the decal apertures and the carrier cavities, the feature cavities being shaped to receive a plurality of metal elements therein, the feature cavities configured for receiving molten solder being cooled in the cavities, the decal being separable from the carrier to partially expose metal core solder contacts; and receiving elements of a substrate being configured to receive the metal core solder contacts thereon, and the metal core solder contacts being exposed and positioned on the substrate.

A system of producing metal cored solder structures on a substrate includes: a decal having a plurality of apertures, the apertures being tapered from a top surface to a bottom surface of the decal; a carrier configured for positioning beneath the bottom of the decal, the carrier having cavities in a top surface and the cavities located in alignment with the apertures of the decal; the decal being configured for positioning on the carrier having the decal bottom surface in contact with the carrier top surface to form feature cavities defined by the decal apertures and the carrier cavities, the feature cavities being shaped to receive a plurality of metal elements therein, the feature cavities configured for receiving molten solder being cooled in the cavities, the decal being separable from the carrier to partially expose metal core solder contacts; and receiving elements of a substrate being configured to receive the metal core solder contacts thereon, and the metal core solder contacts being exposed and positioned on the substrate.

A carbon nanotube structure includes a plurality of carbon nanotubes, and a graphite film that binds one ends of the plurality of carbon nanotubes. And a heat dissipation sheet includes a plurality of carbon nanotube structures arranged in a sheet form, wherein each of the carbon nanotube structures includes a plurality of carbon nanotubes, and a graphite film that binds one ends of the plurality of carbon nanotubes.

Semiconductor packages and methods for forming a semiconductor package are disclosed. The method includes providing a package substrate having first and second major surfaces. The package substrate includes a base substrate having a mold material and a plurality of interconnect structures including via contacts extending through the first to the second major surface of the package substrate. A die having conductive contacts on its first or second surface is provided. The conductive contacts of the die are electrically coupled to the interconnect structures. A cap is formed over the package substrate to encapsulate the die.

A sintering powder comprising: a first type of metal particles having a mean longest dimension of from 100 nm to 50 m.

A sintering powder comprising: a first type of metal particles having a mean longest dimension of from 100 nm to 50 m.

The present invention relates to a reflow film containing a thermoplastic resin which is dissolvable in a solvent, and solder particles, wherein the solder particles are dispersed in the film, and also relates to a solder bump formation method which comprises: (A) a step of mounting the reflow film on the electrode surface side of a substrate, (B) a step of mounting and fixing a flat plate, (C) a step of heating, and (D) a step of dissolving and removing the reflow film, and herewith, a reflow film is provided which, by causing localization of the solder component on the electrodes of the substrate by self-assembly, exhibits excellent storage properties, transportability and handling properties during use, and can form solder bumps or solder joints selectively on only the electrodes.

A method for forming a packaged semiconductor device includes attaching a first major surface of a semiconductor die to a plurality of protrusions extending from a package substrate. A top surface of each protrusion has a die attach material, and the plurality of protrusions define an open region between the first major surface of the semiconductor die and the package substrate. Interconnects are formed between a second major surface of the semiconductor die and the package substrate in which the second major surface opposite the first major surface. An encapsulant material is formed over the semiconductor die and the interconnects.

A method for forming a packaged semiconductor device includes attaching a first major surface of a semiconductor die to a plurality of protrusions extending from a package substrate. A top surface of each protrusion has a die attach material, and the plurality of protrusions define an open region between the first major surface of the semiconductor die and the package substrate. Interconnects are formed between a second major surface of the semiconductor die and the package substrate in which the second major surface opposite the first major surface. An encapsulant material is formed over the semiconductor die and the interconnects.