A semiconductor device includes a substrate, a structured interlayer on the substrate and having defined edges, and a structured metallization on the structured interlayer and also having defined edges. Each defined edge of the structured interlayer neighbors one of the defined edges of the structured metallization and runs in the same direction as the neighboring defined edge of the structured metallization. Each defined edge of the structured interlayer extends beyond the neighboring defined edge of the structured metallization by at least 0.5 microns so that each defined edge of the structured metallization terminates before reaching the neighboring defined edge of the structured interlayer. The structured interlayer has a compressive residual stress at room temperature.

A die and a substrate are provided. The die comprises at least one integrated circuit chip, and the substrate comprises first and second subsets of conductive pillars extending at least partially therethrough. Each of the first subset of conductive pillars comprises a protrusion bump pad protruding from a surface of the substrate, and the second subset of conductive pillars each partially form a trace recessed within the surface of the substrate. The die is coupled to the substrate via a plurality of conductive bumps each extending between one of the protrusion bump pads and the die.

A semiconductor device and a method of manufacturing a semiconductor device. As a non-limiting example, various aspects of this disclosure provide a method of manufacturing a semiconductor device comprising forming interconnection structures by at least part performing a lateral plating process, and a semiconductor device manufactured thereby.

The present invention discloses a connection component, connector, manufacturing method for the same and panel component. The connection component includes a first connector and a second connector electrically connected to the first connector, wherein, between the first connector and the second connector, a connection adhesive is provided, the first connector and/or the second connector both include a base body and multiple connection terminals, wherein the multiple connection terminals are disposed on the base body, a terminal portion of each connection terminal has a protrusion, the protrusion has a saw-tooth shape, and the saw-tooth shape has a regular pattern or a non-regular pattern, Accordingly, the present invention can enhance the reliability of the connection and increase the production yield.

A semiconductor device and a method of manufacturing a semiconductor device. As a non-limiting example, various aspects of this disclosure provide a method of manufacturing a semiconductor device comprising forming interconnection structures by at least part performing a lateral plating process, and a semiconductor device manufactured thereby.

Methods and apparatus are described for enabling copper-to-copper (CuCu) bonding at reduced temperatures (e.g., at most 200 C.) by significantly reducing Cu oxide formation. These techniques provide for faster cycle time and entail no extraordinary measures (e.g., forming gas). Such techniques may also enable longer queue (Q) or staging times. One example semiconductor structure generally includes a semiconductor layer, an adhesion layer disposed above the semiconductor layer, an anodic metal layer disposed above the adhesion layer, and a cathodic metal layer disposed above the anodic metal layer. An oxidation potential of the anodic metal layer may be greater than an oxidation potential of the cathodic metal layer. Such a semiconductor structure may be utilized in fabricating IC packages implementing 2.5D or 3D integration.

Package structures and methods for manufacturing the same are provided. The package structure includes a first substrate and through vias formed through the first substrate. The package further includes redistribution layers formed over the first substrate and connected to the through vias and a first pillar layer formed over the redistribution layers. The package further includes a first barrier layer formed over the first pillar layer and a first cap layer formed over the first barrier layer. The package further includes an underfill layer formed over the redistribution layers and surrounding the first pillar layer, the first barrier layer, and the first cap layer. In addition, the first barrier layer has a first protruding portion laterally extending outside a first sidewall surface of the first pillar layer and a second sidewall surface of the first cap layer.

A pad is disposed on a substrate. A bump structure is disposed on the pad and electrically connected to the pad. The bump structure includes a first copper layer and a second copper layer sequentially stacked on the pad and a solder ball on the second copper layer. A first X-ray diffraction (XRD) peak intensity ratio of (111) plane to (200) plane of the first copper layer is greater than a second XRD peak intensity ratio of (111) plane to (200) plane of the second copper layer.

A semiconductor device and a method of manufacturing a semiconductor device. As a non-limiting example, various aspects of this disclosure provide a method of manufacturing a semiconductor device comprising forming interconnection structures by at least part performing a lateral plating process, and a semiconductor device manufactured thereby.

A method of producing a hybridized device including two microelectronic components, including a first microelectronic component having conductive inserts on a connection surface, and a second microelectronic component having ductile conductive pads on a surface opposed to the connection surface, is provided. The method includes the steps of hybridizing the first and second electronic components face-to-face by arranging the connection surface of the first microelectronic component to oppose the surface of the second microelectronic component having the ductile conductive pads, and establishing an electro-mechanical connection between the first microelectronic component and the second microelectronic component by inserting, at ambient temperature, inserts of the first microelectronic component, provided with a second metal sub-layer, into the ductile conductive pads of the second microelectronic component.