An assembly includes at least one first element comprising at least one first electrical bonding pad; at least one second element comprising at least one second electrical bonding pad; electrical and mechanical interconnect means, wherein the electrical and mechanical interconnect means comprise at least: at least one first intermediate metal interconnect element, on the surface of at least the first electrical bonding pad; at least one sintered joint of metal microparticles or nanoparticles stacked with the first intermediate metal interconnect element; the melting point of the first intermediate metal interconnect element being greater than the sintering temperature of the metal microparticles or nanoparticles. A method for fabricating an assembly is also provided.

A method for forming solder deposits on elevated contact metallizations of terminal faces of a substrate formed in particular as a semiconductor component includes bringing wetting surfaces of the contact metallizations into physical contact with a solder material layer. The solder material is arranged on a solder material carrier. At least for the duration of the physical contact, a heating of the substrate and a tempering of the solder material layer takes place. Subsequently a separation of the physical contact between the contact metallizations wetted with solder material and the solder material layer takes place.

An embodiment package includes a first integrated circuit die, an encapsulant around the first integrated circuit die, a conductive line electrically connecting a first conductive via to a second conductive via, the conductive line including a first segment over the first integrated circuit die and having a first width, and a second segment over the first integrated circuit die having a second width larger than the first width, the second segment extending over a first boundary between the first integrated circuit die and the encapsulant.

An embodiment package includes a first integrated circuit die, an encapsulant around the first integrated circuit die, a conductive line electrically connecting a first conductive via to a second conductive via, the conductive line including a first segment over the first integrated circuit die and having a first width, and a second segment over the first integrated circuit die having a second width larger than the first width, the second segment extending over a first boundary between the first integrated circuit die and the encapsulant.

A semiconductor component includes a semiconductor package having a mountable face, a bump, and a coating part. The bump is made of first solder and is formed on the mountable face. The coating part formed of a first composition containing solder powder made of second solder, a flux component, and a first thermosetting resin binder coats the top end of the bump.

A substrate includes a support layer, a column-shaped first bump, and a second bump. The support layer has a main surface. The first bump is filled with a first conductive metal and also has a first upper surface and a side surface. The second bump includes a plurality of fine particles formed of a second conductive metal and also has a third portion configured to cover the first upper surface and a fourth portion configured to cover a part of the side surface. The first bump is disposed on the main surface, or the first bump is connected to an electrode disposed on the main surface. The second bump has a convex second upper surface. A height of the fourth portion in a direction perpendicular to the first upper surface is smaller than that of the first bump.

An embodiment package includes a first package. The first package includes a first integrated circuit die, an encapsulant around the first integrated circuit die, and redistribution layers over the encapsulant and the first integrated circuit die. The package also includes a second package bonded to the first package by a plurality of functional connectors. The functional connectors and the redistribution layers electrically connect a second integrated circuit die of the second package to the first integrated circuit die. The package also includes a plurality of dummy connectors disposed between the first package and the second package. One end of each of the plurality of dummy connectors facing the first package is physically separated from the first package.

An embodiment package includes a first package. The first package includes a first integrated circuit die, an encapsulant around the first integrated circuit die, and redistribution layers over the encapsulant and the first integrated circuit die. The package also includes a second package bonded to the first package by a plurality of functional connectors. The functional connectors and the redistribution layers electrically connect a second integrated circuit die of the second package to the first integrated circuit die. The package also includes a plurality of dummy connectors disposed between the first package and the second package. One end of each of the plurality of dummy connectors facing the first package is physically separated from the first package.

A method and apparatus for performing metal-to-metal bonding for an electrical device and an electrical device produced thereby. For example and without limitation, various aspects of this disclosure provide a process that comprises depositing a thin metal layer on a copper pillar and then mating the copper pillar with another copper element. Atoms of the thin metal layer may, for example, form a substitutional solid solution or intermetallic compounds with copper. A concentration gradient is introduced by the thin metal layer, and diffusion at the CuCu interface begins immediately. The thin metal film and the copper may, for example, diffuse until the interface disappears or substantially disappears.

A method and apparatus for performing metal-to-metal bonding for an electrical device and an electrical device produced thereby. For example and without limitation, various aspects of this disclosure provide a process that comprises depositing a thin metal layer on a copper pillar and then mating the copper pillar with another copper element. Atoms of the thin metal layer may, for example, form a substitutional solid solution or intermetallic compounds with copper. A concentration gradient is introduced by the thin metal layer, and diffusion at the Cu-Cu interface begins immediately. The thin metal film and the copper may, for example, diffuse until the interface disappears or substantially disappears.