Embodiments include semiconductor packages and cooling semiconductor packaging systems. A semiconductor package includes a second die on a package substrate, first dies on the second die, conductive bumps between the first dies and the second die, a cold plate and a manifold over the first dies, second die, and package substrate, and first openings in the manifold. The first openings are fluidly coupled through the conductive bumps. The semiconductor package may include a first fluid path through the first openings of the manifold, where a first fluid flows through the first fluid path. The semiconductor package may further include a second fluid path through second openings of the cold plate, where a second fluid flows through the second fluid path, and where the first and second fluids of the first and second fluid paths cool heat providing surfaces of the first dies, the second die, or the package substrate.

Disclosed embodiments include an integrated circuit (IC) comprising a silicon wafer, first and second conductive lines on the silicon wafer. There are first, second and third insulation blocks with portions on the first and second conductive lines and the silicon wafer, a metal pillar on the surface of the first conductive line opposite the silicon wafer, and a conductive adhesive block on the surface of the second conductive line opposite the silicon wafer. The IC also has a lead frame having first and second leads, and a capacitor having first and second capacitor terminals in which the first capacitor terminal is connected to the second lead using conductive adhesive, the second capacitor terminal is connected to the second conductive line through the conductive adhesive block, and the first lead is coupled to the first conductive line.

A package comprising a substrate and an integrated device coupled to the substrate through a plurality of pillar interconnects and a plurality of solder interconnects. The plurality of pillar interconnects includes a first pillar interconnect comprising a first cavity. The plurality of solder interconnects comprises a first solder interconnect located in the first cavity of the first pillar interconnect. A planar cross section that extends through the first cavity of the first pillar interconnect may comprise an O shape. The first pillar interconnect comprises a first pillar interconnect portion comprising a first width; and a second pillar interconnect portion comprising a second width that is different than the first width.

A component includes a plurality of electrical connections on a process side opposed to a back side of the component. Each electrical connection includes an electrically conductive multi-layer connection post protruding from the process side. A printed structure includes a destination substrate and one or more components. The destination substrate has two or more electrical contacts and each connection post is in contact with, extends into, or extends through an electrical contact of the destination substrate to electrically connect the electrical contacts to the connection posts. The connection posts or electrical contacts are deformed. Two or more connection posts can be electrically connected to a common electrical contact.

A semiconductor device includes an insulating layer, a barrier electrode layer formed on the insulating layer, a Cu electrode layer that includes a metal composed mainly of copper and that is formed on a principal surface of the barrier electrode layer, and an outer-surface insulating film that includes copper oxide, that coats an outer surface of the Cu electrode layer, and that is in contact with the principal surface of the barrier electrode layer.

A semiconductor package includes an interposer, a semiconductor die, an underfill layer and an encapsulant. The semiconductor die is disposed over and electrically connected with the interposer, wherein the semiconductor die has a front surface, a back surface, a first side surface and a second side surface, the back surface is opposite to the front surface, the first side surface and the second side surface are connected with the front surface and the back surface, and the semiconductor die comprises a chamfered corner connected with the back surface, the first side surface and the second side surface, the chamfered corner comprises at least one side surface. The underfill layer is disposed between the front surface of the semiconductor die and the interposer. The encapsulant laterally encapsulates the semiconductor die and the underfill layer, wherein the encapsulant is in contact with the chamfered corner of the semiconductor die.

A semiconductor package is provided. The semiconductor package includes: a first stack including a first semiconductor substrate; a through via that penetrates the first semiconductor substrate in a first direction; a second stack that includes a second face facing a first face of the first stack, on the first stack; a first pad that is in contact with the through via, on the first face of the first stack; a second pad including a concave inner side face that defines an insertion recess, the second pad located on the second face of the second stack; and a bump that connects the first pad and the second pad, wherein the bump includes a first upper bump on the first pad, and a first lower bump between the first upper bump and the first pad.

A method for manufacturing a semiconductor device includes providing a semiconductor element having an electrode terminal, forming a resist on the semiconductor element, the resist having a first surface facing the electrode terminal and a second surface opposite to the first surface, providing an imprint mold having a third surface and a protrusion protruding from the third surface, forming an opening in the resist by disposing the imprint mold on the second surface of the resist and inserting the protrusion into the resist, the third surface of the imprint mold facing the second surface of the resist, the protrusion being aligned with the electrode terminal, curing the resist by applying energy to the resist, widening the opening in a radial direction of the opening by causing the resist to react with a developer, and forming a bump by filling the opening with metal, in which the forming of the opening in the resist is performed in a state where a gap is provided between the second surface of the resist and the third surface of the imprint mold.

The present disclosure describes a structure with a controlled polyimide profile and a method for forming such a structure. The method includes depositing, on a substrate, a photoresist containing polyimide and performing a first anneal at a first temperature. The method further includes exposing the photoresist to a radiation source through a photomask having a pattern associated with a shape of a polyimide opening. The method further includes performing a second anneal at a second temperature and removing a portion of the photoresist to form the polyimide opening. The method further includes performing a third anneal at a third temperature and cleaning the polyimide opening by ashing.

A package comprising a substrate and an integrated device coupled to the substrate through a plurality of pillar interconnects and a plurality of solder interconnects. The plurality of pillar interconnects comprises a first pillar interconnect. The first pillar interconnect comprises a first pillar interconnect portion comprising a first width and a second pillar interconnect portion comprising a second width that is different than the first width.