Underfill and bump interconnects in a circuit package expand at different rates during a thermal reflow process, causing stress at one end of a bump interconnect that couples to a metal pad. A bump interconnect having multiple isolated areas of contact between a conductive pillar and the metal pad, rather than a single larger continuous contact area, distributes the concentration of stresses to reduce the peak stress, which reduces the chances of damage due to stress occurring between the metal pad and the conductive pillar or in a dielectric layer adjacent to the metal pad. In some examples, before formation of the conductive pillar, a passivation layer is disposed in a pattern on the metal pad with openings in which a plurality of surfaces of the second end of the conductive pillar contact the metal pad.

A package structure is provided. The package structure includes a cell chip structure having a memory cell and a multiplexer. The package structure includes an intermediate chip structure directly bonded to the cell chip structure through dielectric-to-dielectric bonding and metal-to-metal bonding and having a sense amplifier and a driver element. The intermediate chip structure does not have a memory cell. The package structure includes a calculating chip structure bonded to the intermediate chip structure and having a calculating element.

A package structure includes a substrate, a patterned solder resist layer, a plurality of solders, a chip and a polymer gel. The substrate includes a plurality of solder pads. The patterned solder resist layer is disposed on the substrate and includes a plurality of stepped openings. The stepped openings expose the solder pads respectively. The solders are disposed on the solder pads and located in the stepped openings respectively. The chip is disposed on the substrate and includes an active surface and a plurality of bond pads. The bond pads are disposed on the active surface and connected to the solder pads by the solders. The polymer gel fills between a top surface of the patterned solder resist layer and the active surface. The polymer gel at least surrounds a disposing region of the solders and fills between two adjacent solders.

A package structure includes a substrate, a patterned solder resist layer, a plurality of solders, a chip and a polymer gel. The substrate includes a plurality of solder pads. The patterned solder resist layer is disposed on the substrate and includes a plurality of stepped openings. The stepped openings expose the solder pads respectively. The solders are disposed on the solder pads and located in the stepped openings respectively. The chip is disposed on the substrate and includes an active surface and a plurality of bond pads. The bond pads are disposed on the active surface and connected to the solder pads by the solders. The polymer gel fills between a top surface of the patterned solder resist layer and the active surface. The polymer gel at least surrounds a disposing region of the solders and fills between two adjacent solders.

A semiconductor chip includes a semiconductor device with an upper surface and a lower surface opposite to the upper surface. The semiconductor device includes an input terminal, a plurality of through silicon vias, a plurality of selection pads, a plurality of tilt pads and a plurality of tilt conductive structures. The through silicon vias are extended through the semiconductor device. The selection pads are located on the lower surface The tilt pads are located on the upper surface and connected to the selection pads through the through silicon vias respectively. Each tilt pad includes a pad surface that is non-parallel to the upper surface. A lower end of each tilt conductive structure is in contact with the pad surface of each tilt pad, and an upper end of each tilt conductive structure is vertically overlapped with an immediately-adjacent one of the tilt pads.

The present disclosure provides a semiconductor package, including a first device having a first joining surface, a first conductive component at least partially protruding from the first joining surface, a second device having a second joining surface facing the first joining surface, and a second conductive component at least exposing from the second joining surface. The first conductive component and the second conductive component form a joint having a first beak. The first beak points to either the first joining surface or the second joining surface.

The present disclosure provides a semiconductor package, including a first device having a first joining surface, a first conductive component at least partially protruding from the first joining surface, a second device having a second joining surface facing the first joining surface, and a second conductive component at least exposing from the second joining surface. The first conductive component and the second conductive component form a joint having a first beak. The first beak points to either the first joining surface or the second joining surface.

A connection body includes a circuit board terminals arranged into terminal rows, the terminals rows being arranged in parallel to one another in a widthwise direction orthogonal to a direction in which the terminals are arranged, and an electronic component including bumps arranged into bump rows corresponding to the terminal rows, the bumps being arranged in parallel to one another in a widthwise direction orthogonal to a direction in which the bumps are arranged. The electronic component is connected upon the circuit board interposed by an anisotropic conductive adhesive including electrically conductive particles arranged therein. A distance between mutually opposing terminals of the terminals and bumps of the bumps arranged toward the outer sides of the circuit board and the electronic component is greater than a distance between mutually opposing terminals of the terminals and bumps of the bumps arranged toward their inner sides.

A bump-on-trace (BOT) interconnection in a package and methods of making the BOT interconnection are provided. An embodiment BOT interconnection comprises a landing trace including a distal end, a conductive pillar extending at least to the distal end of the landing trace; and a solder feature electrically coupling the landing trace and the conductive pillar. In an embodiment, the conductive pillar overhangs the end surface of the landing trace. In another embodiment, the landing trace includes one or more recesses for trapping the solder feature after reflow. Therefore, a wetting area available to the solder feature is increased while permitting the bump pitch of the package to remain small.

A method of forming a reduced volume interconnect for a chip stack including multiple silicon layers, the method including: forming multiple conductive structures, each of at least a subset of the conductive structures having a volume of conductive material for a corresponding under bump metallurgy pad onto which the conductive structure is transferred that is configured such that a ratio of an unreflowed diameter of the conductive structure to a diameter of the corresponding pad is about one third-to-one or less; transferring the conductive structures to the silicon layers; stacking the silicon layers in a substantially vertical dimension such that each of the conductive structures on a given silicon layer is aligned with a corresponding electrical contact location on an underside of an adjacent silicon layer; and heating the interconnect so as to metallurgically bond multiple electrical contact locations of adjacent silicon layers.