The present disclosure provides a method for preparing a semiconductor package. The method includes providing a first device having a first upper surface and a first side, wherein the first upper surface and the first side form a first corner. The method also includes forming a bump structure over the first upper surface, wherein the bump structure extends laterally across the first side of the first device.

An electronic device includes a first electronic component including a first signal line and a first ground conductor surface, a second electronic component that is placed above the first electronic component and includes a second signal line and a second ground conductor surface opposed to the first ground conductor surface, a waveguide including the first ground conductor surface, the second ground conductor surface, and a pair of first ground conductor walls that are opposed to each other and are placed between the first ground conductor surface and the second ground conductor surface, a first transducing part that transduces a signal between the first signal line and the waveguide, and a second transducing part that transduces a signal between the second signal line and the waveguide.

Disclosed herein is an electronic circuit package includes a substrate, an electronic component mounted on a surface of the substrate, a magnetic mold resin covering the surface of the substrate so as to embed therein the electronic component, a metal film covering the magnetic mold resin, and a magnetic film covering the metal film. The magnetic mold resin includes a resin material, and a magnetic filler blended in the resin material, the magnetic filler containing Fe and 32 wt. % or more and 39 wt. % or less of a metal material composed mainly of Ni.

A semiconductor package includes a first device and a bump structure disposed over the first device. In some embodiments, the first device has a first upper surface and a first side, wherein the first upper surface and the first side form a first corner of the first device. In some embodiments, the bump structure is disposed over the first upper surface and extends laterally across the first side of the first device. The lateral extension of the bump structure across the first side of the semiconductor device can contact a corresponding conductor of a laterally adjacent device to implement a lateral signal path between the semiconductor device and the laterally adjacent device in the absence of a redistribution structure corresponding to the redistribution layer.

A chip package structure is provided. The chip package structure includes a redistribution structure and a first chip structure over the redistribution structure. The chip package structure also includes a first solder bump between the redistribution structure and the first chip structure and a first molding layer surrounding the first chip structure. The chip package structure further includes a second chip structure over the first chip structure and a second molding layer surrounding the second chip structure. In addition, the chip package structure includes a third molding layer surrounding the first molding layer, the second molding layer, and the first solder bump. A portion of the third molding layer is between the first molding layer and the redistribution structure.

A semiconductor device is provided with a semiconductor element having a plurality of electrodes, a plurality of terminals electrically connected to the plurality of electrodes, and a sealing resin covering the semiconductor element. The sealing resin covers the plurality of terminals such that a bottom surface of the semiconductor element in a thickness direction is exposed. A first terminal, which is one of the plurality of terminals, is disposed in a position that overlaps a first electrode, which is one of the plurality of electrodes, when viewed in the thickness direction. The semiconductor device is provided with a conductive connection member that contacts both the first terminal and the first electrode.

A multi-package integrated circuit assembly can include a first electronic package having a first package substrate including a first die side and a first interface side. A first die can be electrically coupled to the first die side. A second electronic package can include a second package substrate having a second die side and a second interface side. A second die can be electrically coupled to the second die side. A conductive interconnect can be electrically coupled from the interface side of the first package substrate to the interface side of the second package substrate. A collective substrate can be attached to the first electronic package. For instance, the collective substrate can be located on a face of the first electronic package opposing the first package substrate. The collective substrate is electrically coupled to the first die and the second die through the first package substrate.

Some embodiments relate to a semiconductor device package, which includes a substrate with a contact pad. A non-solder ball is coupled to the contact pad at a contact pad interface surface. A layer of solder is disposed over an outer surface of the non-solder ball, and has an inner surface and an outer surface which are generally concentric with the outer surface of the non-solder ball. An intermediate layer separates the non-solder ball and the layer of solder. The intermediate layer is distinct in composition from both the non-solder ball and the layer of solder. Sidewalls of the layer of solder are curved or sphere-like and terminate at a planar surface, which is disposed at a maximum height of the layer of solder as measured from the contact pad interface surface.

The embodiments described above provide enlarged overlapping surface areas of bonding structures between a package and a bonding substrate. By using elongated bonding structures on either the package and/or the bonding substrate and by orienting such bonding structures, the bonding structures are designed to withstand bonding stress caused by thermal cycling to reduce cold joints.

The embodiments described above provide enlarged overlapping surface areas of bonding structures between a package and a bonding substrate. By using elongated bonding structures on either the package and/or the bonding substrate and by orienting such bonding structures, the bonding structures are designed to withstand bonding stress caused by thermal cycling to reduce cold joints.