A surface of at least one of a connection terminal of an electronic component and a connection terminal of a circuit board is covered with a protection layer made of a AgSn alloy. The connection terminal of the electronic component is soldered to the connection terminal of the circuit board.

Providing the conductive paste for the material forming the conductive connecting member without disproportionately located holes (gaps), coarse voids, and cracks, which improves thermal cycle and is excellent in crack resistance and bonding strength. An conductive paste including metal fine particles (P) comprising metal fine particles (P1) of one or more than two kinds selected from metal and alloy thereof, having mean primary particle diameter from 1 to 150 nm, and metal fine particles (P2) of same metal as the metal fine particles (P1), having mean primary particle diameter from 1 to 10 m, mixing ratio of (P1/P2) being from 80 to 95 mass % for P1 and from 20 to 5 mass % for P2 (a total of mass % being 100 mass %); and organic dispersion medium (D) comprising organic solvent (S), or organic solvent (S) and organic binder (B), mixing ratio (P/D) of the metal fine particles (P) and the organic dispersion medium (D) being from 50 to 85 mass % for P and from 50 to 15 mass % for D (a total of mass % being 100 mass %).

Embodiments of the invention include multi-die package and methods of making such multi-die packages. In an embodiment a mold layer has a first surface and a second surface that is opposite from the first surface. One or more first electrical components that each have a solderable terminal that is oriented to face the first surface of the mold layer. The mold layer may also have one or more second electrical components that each have a second type of terminal that is oriented to face the second surface of the mold layer. Embodiments may also include one or more conductive through vias formed between the first surface of the mold layer and the second surface of the mold layer. Accordingly an electrical connection may be made from the second surface of the mold layer to the first electrical components that are oriented to face the first surface of the mold layer.

A method for bonding with a silver paste includes coating a semiconductor device or a substrate with the silver paste. The silver paste contains a plurality of silver particles and a plurality of bismuth particles. The method further includes disposing the semiconductor on the substrate and forming a bonding layer by heating the silver paste, wherein the semiconductor and the substrate are bonded to each other by the bonding layer.

A method for bonding with a silver paste includes coating a semiconductor device or a substrate with the silver paste. The silver paste contains a plurality of silver particles and a plurality of bismuth particles. The method further includes disposing the semiconductor on the substrate and forming a bonding layer by heating the silver paste, wherein the semiconductor and the substrate are bonded to each other by the bonding layer.

A semiconductor component includes a semiconductor package having a mountable face, a bump, and a coating part. The bump is made of first solder and is formed on the mountable face. The coating part formed of a first composition containing solder powder made of second solder, a flux component, and a first thermosetting resin binder coats the top end of the bump.

A mounting structure, including: a first component that has a first bump; a second component that has a second bump; a mounting component that has a primary mounting surface and a secondary mounting surface; a first solder that connects an electrode on the primary mounting surface and the first bump; a second solder that connects an electrode on the secondary mounting surface and the second bump; and a reinforcing resin that covers a part of the first solder and that is not in contact with the primary mounting surface.

A method and apparatus for performing metal-to-metal bonding for an electrical device and an electrical device produced thereby. For example and without limitation, various aspects of this disclosure provide a process that comprises depositing a thin metal layer on a copper pillar and then mating the copper pillar with another copper element. Atoms of the thin metal layer may, for example, form a substitutional solid solution or intermetallic compounds with copper. A concentration gradient is introduced by the thin metal layer, and diffusion at the CuCu interface begins immediately. The thin metal film and the copper may, for example, diffuse until the interface disappears or substantially disappears.

A method and apparatus for performing metal-to-metal bonding for an electrical device and an electrical device produced thereby. For example and without limitation, various aspects of this disclosure provide a process that comprises depositing a thin metal layer on a copper pillar and then mating the copper pillar with another copper element. Atoms of the thin metal layer may, for example, form a substitutional solid solution or intermetallic compounds with copper. A concentration gradient is introduced by the thin metal layer, and diffusion at the CuCu interface begins immediately. The thin metal film and the copper may, for example, diffuse until the interface disappears or substantially disappears.

A microelectronic assembly includes a first substrate having a surface and a first conductive element and a second substrate having a surface and a second conductive element. The assembly further includes an electrically conductive alloy mass joined to the first and second conductive elements. First and second materials of the alloy mass each have a melting point lower than a melting point of the alloy. A concentration of the first material varies in concentration from a relatively higher amount at a location disposed toward the first conductive element to a relatively lower amount toward the second conductive element, and a concentration of the second material varies in concentration from a relatively higher amount at a location disposed toward the second conductive element to a relatively lower amount toward the first conductive element.