A semiconductor package structure includes a first redistribution layer, a plurality of conductive connectors, a chip, and an encapsulant. The first redistribution layer has a first surface and a second surface opposite to the first surface. The first redistribution layer includes at least one conductive pattern and at least one dielectric layer stacked on each other. The conductive pattern includes a plurality of landing pads, and each of the landing pads is separated from the dielectric layer. The conductive connectors are located on the first surface. Each of the conductive connectors is corresponding to and electrically connected to one of the landing pads. The chip is located on the first surface. The chip is electrically connected to the first redistribution layer. The encapsulant encapsulates the chip and the conductive connectors. A manufacturing method of a semiconductor package structure is also provided.

A package structure including a device die structure, an insulating encapsulant, and a first redistribution circuit is provided. The device die structure includes a first semiconductor die and a second semiconductor die. The first semiconductor die is stacked over and electrically connected to the second semiconductor die. The insulating encapsulant laterally encapsulates the device die structure. The insulating encapsulant includes a first encapsulation portion and a second encapsulation portion connected to the first encapsulation portion. The first encapsulation portion is disposed on the second semiconductor die and laterally encapsulates the first semiconductor die. The second encapsulation portion laterally encapsulates the first insulating encapsulation and the second semiconductor die. The first redistribution circuit structure is disposed on the device die and a first surface of the insulating encapsulant, and the first redistribution circuit structure is electrically connected to the device die.

A package structure including a device die structure, an insulating encapsulant, and a first redistribution circuit is provided. The device die structure includes a first semiconductor die and a second semiconductor die. The first semiconductor die is stacked over and electrically connected to the second semiconductor die. The insulating encapsulant laterally encapsulates the device die structure. The insulating encapsulant includes a first encapsulation portion and a second encapsulation portion connected to the first encapsulation portion. The first encapsulation portion is disposed on the second semiconductor die and laterally encapsulates the first semiconductor die. The second encapsulation portion laterally encapsulates the first insulating encapsulation and the second semiconductor die. The first redistribution circuit structure is disposed on the device die structure and a first surface of the insulating encapsulant, and the first redistribution circuit structure is electrically connected to the device die structure.

A package structure including a device die, an insulating encapsulant, and a first redistribution circuit is provided. The device die includes a first semiconductor die and a second semiconductor die. The first semiconductor die is stacked over and electrically connected to the second semiconductor die. The insulating encapsulant laterally encapsulates the device die. The insulating encapsulant includes a first encapsulation portion and a second encapsulation portion connected to the first encapsulation portion. The first encapsulation portion is disposed on the second semiconductor die and laterally encapsulates the first semiconductor die. The second encapsulation portion laterally encapsulates the first insulating encapsulation and the second semiconductor die. The first redistribution circuit structure is disposed on the device die and a first surface of the insulating encapsulant, and the first redistribution circuit structure is electrically connected to the device die.

A semiconductor package structure includes a first redistribution layer, a plurality of conductive connectors, a chip, and an encapsulant. The first redistribution layer has a first surface and a second surface opposite to the first surface. The first redistribution layer includes at least one conductive pattern and at least one dielectric layer stacked on each other. The conductive pattern includes a plurality of landing pads, and each of the landing pads is separated from the dielectric layer. The conductive connectors are located on the first surface. Each of the conductive connectors is corresponding to and electrically connected to one of the landing pads. The chip is located on the first surface. The chip is electrically connected to the first redistribution layer. The encapsulant encapsulates the chip and the conductive connectors. A manufacturing method of a semiconductor package structure is also provided.

A semiconductor package is provided. The semiconductor package can include a first redistributed layer on which a plurality of semiconductor chips and a plurality of passive devices are mounted on one surface, a second redistributed layer electrically connected to the first redistributed layer through a via, an external connection terminal formed on the lower surface of the second redistributed layer, a first mold provided to cover the plurality of semiconductor chips and the plurality of passive devices on the first redistributed layer, and a second mold provided between the first redistributed layer and the second redistributed layer. Each of the first redistributed layer and the second redistributed layer includes a wiring pattern and an insulating layer and is composed of a plurality of layers, and at least one of the plurality of semiconductor chips is disposed between the first redistributed layer and the second redistributed layer.

A package structure includes a first through via structure formed in a substrate and a semiconductor die formed below the first through via structure. The package structure further includes a conductive structure formed in a passivation layer over the substrate. The conductive structure includes a first via portion and a second via portion, the first via portion is directly over the first through via structure, and there is no conductive material directly below and in direct contact with the second via portion.

Provided are a package structure and a method of manufacturing the same. The method includes the following processes. A die is provided. An encapsulant is formed laterally aside the die. A first dielectric layer is formed on the encapsulant and the die. A first redistribution layer is formed to penetrate through the first dielectric layer to connect to the die, the first redistribution layer includes a first via embedded in the first dielectric layer and a first trace on the first dielectric layer and connected to the first via. The first via and the first trace of the first redistribution layer are formed separately.

A semiconductor package and a manufacturing method of a semiconductor package are provided. The semiconductor package includes a device die, a redistribution structure, a heat dissipation module and a molding compound. The redistribution structure is disposed at a front side of the device die. The heat dissipation module includes a thermal interfacial layer and a metal lid. The thermal interfacial layer is in direct contact with a back side of the device die, and located between the device die and the metal lid. The molding compound is disposed between the redistribution structure and the heat dissipation module, and has a body portion and an extended portion. The device die is located in the extended portion. The body portion laterally surrounds the extended portion. The extended portion is thicker than the body portion.

A method for producing a component having a semiconductor body includes providing the semiconductor body including a radiation passage surface and a rear side facing away from the radiation passage surface, wherein the semiconductor body comprises on the rear side a connection location for the electrical contacting of the semiconductor body, providing a composite carrier including a carrier layer and a partly cured connecting layer, applying the semiconductor body on the composite carrier, such that the connection location penetrates into the partly cured connecting layer, curing the connecting layer to form a solid composite, applying a molded body material on the composite carrier after curing the connecting layer, wherein the molded body covers side surfaces of the semiconductor body, forming a cutout through the carrier layer and the connecting layer in order to expose the connection location, and filling the cutout with an electrically conductive material.