One exemplary disclosed embodiment comprises a sintered porous metallic film as a die attach mechanically connecting a backside of a semiconductor die to a substrate of a package. Another exemplary disclosed embodiment comprises a sintered porous metallic film as an electrical connection between an electrode on an active surface of a semiconductor die and a substrate of a package. The porous metallic film may be integrated as a prefabricated film or may be created at the wafer or substrate level. By providing a conformal bond through the presence of pores in the metallic film, the sintered connection can provide a reliable mechanical connection with a lower effective elastic modulus. Thermal expansion stresses between die and substrate are thereby accommodated for robustness against thermal cycling, which is of particular relevance for high performance power modules and automotive applications.

An anisotropic conductive film has a first connection layer and a second connection layer formed on a surface of the first connection layer. The first connection layer is a photopolymerized resin layer, and the second connection layer is a thermo- or photo-cationically, anionically, or radically polymerizable resin layer. Conductive particles for anisotropic conductive connection are arranged on a surface of the first connection layer on a side of the second connection layer so that the embedding ratio of the conductive particles in the first connection layer is 80% or more, or 1% or more and 20% or less.

Disclosed is a method for bonding with a silver paste, the method including: coating a silver paste on a semiconductor device or a substrate, the silver paste containing silver and indium; disposing the semiconductor on the substrate; and heating the silver paste to form a bonding layer, wherein the semiconductor device and the substrate are bonded to each other through the bonding layer, and wherein the indium is contained in the silver paste at 40 mole % or less.

A method for high temperature bonding of substrates may include providing a top substrate and a bottom substrate, and positioning an insert between the substrates to form a assembly. The insert may be shaped to hold at least an amount of Sn having a low melting temperature and a gap shaped to hold at least a plurality of metal particles having a high melting temperature greater than the low melting temperature. The assembly may be heated to below the low melting temperature and held for a first period of time. The assembly may further be heated to approximately the low melting temperature and held for a period of time at a temperature equal to or greater than the low melting temperature such that the amount of Sn and the amount of metal particles form one or more intermetallic bonds. The assembly may be cooled to create a bonded assembly.

A sintering powder comprising: a first type of metal particles having a mean longest dimension of from 100 nm to 50 m.

In a general aspect, a method includes coupling a sintering film with a carrier tape cutting the sintering film into a plurality of sintering film portions, and removing a sintering film portion of the plurality of sintering film portions from the carrier tape. The method further includes disposing the sintering film portion on a surface of a semiconductor device assembly, and performing a thermal operation to couple the sintering film portion to the surface of the semiconductor device assembly.