A die attachment structure can include: a base; a die located above a first surface of the base; a first adhesive layer located on a back surface of the die, wherein the die is pasted on the first surface of the base at least by the first adhesive layer; and a second adhesive layer at least partially covering the sidewalls of the die.

The invention is directed towards enhanced systems and methods for employing a pulsed photon (or EM energy) source, such as but not limited to a laser, to electrically couple, bond, and/or affix the electrical contacts of a semiconductor device to the electrical contacts of another semiconductor devices. Full or partial rows of LEDs are electrically coupled, bonded, and/or affixed to a backplane of a display device. The LEDs may be μLEDs. The pulsed photon source is employed to irradiate the LEDs with scanning photon pulses. The EM radiation is absorbed by either the surfaces, bulk, substrate, the electrical contacts of the LED, and/or electrical contacts of the backplane to generate thermal energy that induces the bonding between the electrical contacts of the LEDs' electrical contacts and backplane's electrical contacts. The temporal and spatial profiles of the photon pulses, as well as a pulsing frequency and a scanning frequency of the photon source, are selected to control for adverse thermal effects.

The invention is directed towards enhanced systems and methods for employing a pulsed photon (or EM energy) source, such as but not limited to a laser, to electrically couple, bond, and/or affix the electrical contacts of a semiconductor device to the electrical contacts of another semiconductor devices. Full or partial rows of LEDs are electrically coupled, bonded, and/or affixed to a backplane of a display device. The LEDs may be μLEDs. The pulsed photon source is employed to irradiate the LEDs with scanning photon pulses. The EM radiation is absorbed by either the surfaces, bulk, substrate, the electrical contacts of the LED, and/or electrical contacts of the backplane to generate thermal energy that induces the bonding between the electrical contacts of the LEDs' electrical contacts and backplane's electrical contacts. The temporal and spatial profiles of the photon pulses, as well as a pulsing frequency and a scanning frequency of the photon source, are selected to control for adverse thermal effects.

In an embodiment, a package includes a first package structure including a first die having a first active side and a first back-side, the first active side including a first bond pad and a first insulating layer a second die bonded to the first die, the second die having a second active side and a second back-side, the second active side including a second bond pad and a second insulating layer, the second active side of the second die facing the first active side of the first die, the second insulating layer being bonded to the first insulating layer through dielectric-to-dielectric bonds, and a conductive bonding material bonded to the first bond pad and the second bond pad, the conductive bonding material having a reflow temperature lower than reflow temperatures of the first and second bond pads.

In an embodiment, a package includes a first package structure including a first die having a first active side and a first back-side, the first active side including a first bond pad and a first insulating layer a second die bonded to the first die, the second die having a second active side and a second back-side, the second active side including a second bond pad and a second insulating layer, the second active side of the second die facing the first active side of the first die, the second insulating layer being bonded to the first insulating layer through dielectric-to-dielectric bonds, and a conductive bonding material bonded to the first bond pad and the second bond pad, the conductive bonding material having a reflow temperature lower than reflow temperatures of the first and second bond pads.

A semiconductor structure includes an insulating encapsulant, a semiconductor element, a redistribution layer and an insulating layer. The semiconductor element is embedded in the insulating encapsulant. The redistribution layer is disposed over the insulating encapsulant and electrically connected to the semiconductor element. The insulating layer is disposed in between the insulating encapsulant and the redistribution layer, wherein an uneven interface exists between the insulating layer and the insulating encapsulant, and a planar interface exists between the insulating layer and the redistribution layer.

A semiconductor structure includes an insulating encapsulant, a semiconductor element, a redistribution layer and an insulating layer. The semiconductor element is embedded in the insulating encapsulant. The redistribution layer is disposed over the insulating encapsulant and electrically connected to the semiconductor element. The insulating layer is disposed in between the insulating encapsulant and the redistribution layer, wherein an uneven interface exists between the insulating layer and the insulating encapsulant, and a planar interface exists between the insulating layer and the redistribution layer.

An electrically non-conducting film (109) comprising an oligomer comprising an arylene or heteroarylene repeating unit is disposed between a chip (105), e.g. a flip-chip, and a functional layer (101), e.g. a printed circuit board, electrically connected to the chip by electrically conducting interconnects (107). The oligomer may be crosslinked.

Structures and formation methods of chip packages are provided. The method includes disposing a semiconductor die over a carrier substrate. The method also includes disposing an interposer substrate over the carrier substrate. The interposer substrate has a recess that penetrates through opposite surfaces of the interposer substrate. The interposer substrate has interior sidewalls surrounding the semiconductor die, and the semiconductor die is as high as or higher than the interposer substrate. The method further includes forming a protective layer in the recess of the interposer substrate to surround the semiconductor die. In addition, the method includes removing the carrier substrate and stacking a package structure over the interposer substrate.

The invention is directed towards enhanced systems and methods for employing a pulsed photon (or EM energy) source, such as but not limited to a laser, to electrically couple, bond, and/or affix the electrical contacts of a semiconductor device to the electrical contacts of another semiconductor devices. Full or partial rows of LEDs are electrically coupled, bonded, and/or affixed to a backplane of a display device. The LEDs may be μLEDs. The pulsed photon source is employed to irradiate the LEDs with scanning photon pulses. The EM radiation is absorbed by either the surfaces, bulk, substrate, the electrical contacts of the LED, and/or electrical contacts of the backplane to generate thermal energy that induces the bonding between the electrical contacts of the LEDs' electrical contacts and backplane's electrical contacts. The temporal and spatial profiles of the photon pulses, as well as a pulsing frequency and a scanning frequency of the photon source, are selected to control for adverse thermal effects.