A semiconductor package includes a power semiconductor chip comprising SiC, a leadframe part comprising Cu, wherein the power semiconductor chip is arranged on the leadframe part, and a solder joint electrically and mechanically coupling the power semiconductor chip to the leadframe part, wherein the solder joint comprises at least one intermetallic phase.

A conformal coating on a semiconductor die provides adhesion between the die and a support. No additional adhesive is necessary to affix the die on the support. The conformal coating protects the die during assembly, and serves to electrically insulate the die from electrically conductive parts that the die may contact. The conformal coating may be an organic polymer, such as a parylene, for example. Also, a method for adhering a die onto a support, which may optionally be another die, includes providing a coating of a conformal between the die and the support, and heating the coating between the die and the support. The conformal coating may be provided on a die attach area of a surface of the die, or on a die mount region of a surface of the support, or on both a die attach area of a surface of the die and on a die mount region of a surface of the support; and the conformal coating may be provided following placement of the die on the support.

A display device and a method of manufacturing the same are provided. The display device includes a first electrode disposed on a substrate, an adhesive auxiliary layer disposed on the first electrode and including a self-assembled monolayer, a light emitting element disposed on the adhesive auxiliary layer, and a contact electrode disposed between the adhesive auxiliary layer and the light emitting element. The light emitting element includes a first semiconductor layer, a second semiconductor layer disposed on the first semiconductor layer, and an intermediate layer disposed between the first semiconductor layer and the second semiconductor layer.

A display device and a method of manufacturing the same are provided. The display device includes a first electrode disposed on a substrate, an adhesive auxiliary layer disposed on the first electrode and including a self-assembled monolayer, a light emitting element disposed on the adhesive auxiliary layer, and a contact electrode disposed between the adhesive auxiliary layer and the light emitting element. The light emitting element includes a first semiconductor layer, a second semiconductor layer disposed on the first semiconductor layer, and an intermediate layer disposed between the first semiconductor layer and the second semiconductor layer.

In an embodiment, a method includes performing a first plasma deposition to form a buffer layer over a first side of a first integrated circuit device, the first integrated circuit device comprising a first substrate and a first interconnect structure; performing a second plasma deposition to form a first bonding layer over the buffer layer, wherein a plasma power applied during the second plasma deposition is greater than a plasma power applied during the first plasma deposition; planarizing the first bonding layer; forming a second bonding layer over a second substrate; pressing the second bonding layer onto the first bonding layer; and removing the first substrate.

A method of fabricating a semiconductor chip includes the following steps. A bonding material layer is formed on a first wafer substrate and is patterned to form a first bonding layer having a strength adjustment pattern. A semiconductor component layer and a first interconnect structure layer are formed on a second wafer substrate. The first interconnect structure layer is located. A second bonding layer is formed on the first interconnect structure layer. The second wafer substrate is bonded to the first wafer substrate by contacting the second bonding layer with the first bonding layer. A bonding interface of the second bonding layer and the first bonding layer is smaller than an area of the second bonding layer. A second interconnect structure layer is formed on the semiconductor component layer. A conductor terminal is formed on the second interconnect structure layer.

A method of fabricating a semiconductor chip includes the following steps. A bonding material layer is formed on a first wafer substrate and is patterned to form a first bonding layer having a strength adjustment pattern. A semiconductor component layer and a first interconnect structure layer are formed on a second wafer substrate. The first interconnect structure layer is located. A second bonding layer is formed on the first interconnect structure layer. The second wafer substrate is bonded to the first wafer substrate by contacting the second bonding layer with the first bonding layer. A bonding interface of the second bonding layer and the first bonding layer is smaller than an area of the second bonding layer. A second interconnect structure layer is formed on the semiconductor component layer. A conductor terminal is formed on the second interconnect structure layer.

The present application discloses a semiconductor device with a heat dissipation unit and a method for fabricating the semiconductor device. The semiconductor device includes a die stack, an intervening bonding layer positioned on the die stack, and a carrier structure including a carrier substrate positioned on the intervening bonding layer, and through semiconductor vias positioned in the carrier substrate and on the intervening bonding layer for thermally conducting heat.

A method of forming a semiconductor structure, including steps of providing a first substrate, and forming a first bonding layer on a surface of the first substrate, wherein a material of the first bonding layer includes dielectric material of silicon, nitrogen and carbon.

The present application provides a method for fabricating a semiconductor device. The method includes providing a carrier substrate, forming through semiconductor vias in the carrier substrate for thermally conducting heat, forming a bonding layer on the carrier substrate, providing a first die structure including through semiconductor vias, forming an intervening bonding layer on the first die structure, bonding the first die structure onto the bonding layer through the intervening bonding layer, and bonding a second die structure onto the first die structure. The carrier substrate, the through semiconductor vias, and the bonding layer together configure a carrier structure. The second die structure and the first die structure are electrically coupled by the through semiconductor vias.