Some embodiments relate to a three-dimensional (3D) integrated circuit (IC). The 3D IC includes a first IC die comprising a first semiconductor substrate, and a first interconnect structure over the first semiconductor substrate. The 3D IC also includes a second IC die comprising a second semiconductor substrate, and a second interconnect structure that separates the second semiconductor substrate from the first interconnect structure. A seal ring structure separates the first interconnect structure from the second interconnect structure and perimetrically surrounds a gas reservoir between the first IC die and second IC die. The seal ring structure includes a sidewall gas-vent opening structure configured to allow gas to pass between the gas reservoir and an ambient environment surrounding the 3D IC.

Some embodiments relate to a three-dimensional (3D) integrated circuit (IC). The 3D IC includes a first IC die comprising a first semiconductor substrate, and a first interconnect structure over the first semiconductor substrate. The 3D IC also includes a second IC die comprising a second semiconductor substrate, and a second interconnect structure that separates the second semiconductor substrate from the first interconnect structure. A seal ring structure separates the first interconnect structure from the second interconnect structure and perimetrically surrounds a gas reservoir between the first IC die and second IC die. The seal ring structure includes a sidewall gas-vent opening structure configured to allow gas to pass between the gas reservoir and an ambient environment surrounding the 3D IC.

Electrolyte for a solid-state battery includes a body having grains of inorganic material sintered to one another, where the grains include lithium. The body is thin, has little porosity by volume, and has high ionic conductivity.

Electrolyte for a solid-state battery includes a body having grains of inorganic material sintered to one another, where the grains include lithium. The body is thin, has little porosity by volume, and has high ionic conductivity.

Provided is a metal paste for joints, containing: metal particles; and linear or branched monovalent aliphatic alcohol having 1 to 20 carbon atoms, in which the metal particles include sub-micro copper particles having a volume average particle diameter of 0.12 μm to 0.8 μM.

Provided is a metal paste for joints, containing: metal particles; and linear or branched monovalent aliphatic alcohol having 1 to 20 carbon atoms, in which the metal particles include sub-micro copper particles having a volume average particle diameter of 0.12 μm to 0.8 μM.

A method of making a semiconductor including soldering a conductor to an aluminum metallization is disclosed. In one example, the method includes substituting an aluminum oxide layer on the aluminum metallization by a substitute metal oxide layer or a substitute metal alloy oxide layer. Then, substitute metal oxides in the substitute metal oxide layer or the substitute metal alloy oxide layer are at least partly reduced. The conductor is soldered to the aluminum metallization using a solder material.

The present invention relates to a method and apparatus for manufacturing a plurality of electronic circuits, each electronic circuit comprising a respective flexible first portion, comprising a respective group of contact pads (contacts), and a respective flexible integrated circuit, IC, comprising a respective group of terminals and mounted on the respective group of contact pads with each terminal in electrical contact with a respective contact pad, the method comprising: providing (e.g. manufacturing) a flexible first structure comprising the plurality of first portions; providing (e.g. manufacturing) a second structure comprising the plurality of flexible ICs and a common support arranged to support the plurality of flexible ICs; dispensing an adhesive onto the first structure and/or onto the flexible ICs; transferring said flexible ICs from the common support onto the flexible first structure such that each group of terminals is mounted on (brought into electrical contact with) a respective group of contact pads to form an electronic circuit, providing a heated surface and an opposing surface together having a gap therebetween, transferring the flexible first structure, comprising the electronic circuits, between the heated surface and the opposing surface such that the adhesive is cured by application of heat and pressure from the heated surface and the opposing surface thereby adhering the IC onto the respective first portion.

The present invention relates to a method and apparatus for manufacturing a plurality of electronic circuits, each electronic circuit comprising a respective flexible first portion, comprising a respective group of contact pads (contacts), and a respective flexible integrated circuit, IC, comprising a respective group of terminals and mounted on the respective group of contact pads with each terminal in electrical contact with a respective contact pad, the method comprising: providing (e.g. manufacturing) a flexible first structure comprising the plurality of first portions; providing (e.g. manufacturing) a second structure comprising the plurality of flexible ICs and a common support arranged to support the plurality of flexible ICs; dispensing an adhesive onto the first structure and/or onto the flexible ICs; transferring said flexible ICs from the common support onto the flexible first structure such that each group of terminals is mounted on (brought into electrical contact with) a respective group of contact pads to form an electronic circuit, providing a heated surface and an opposing surface together having a gap therebetween, transferring the flexible first structure, comprising the electronic circuits, between the heated surface and the opposing surface such that the adhesive is cured by application of heat and pressure from the heated surface and the opposing surface thereby adhering the IC onto the respective first portion.

A method for manufacturing a power electronic module by additive manufacturing includes the step of depositing a layer of an electrically conductive nanoporous material on a substrate that includes an electrically insulating layer and at least one layer of conductive metal material, called a metallized substrate. The method further includes the step of placing an element for example an active component of the semiconductor power component type, on the layer of nanoporous material and sintering the layer of nanoporous material, so as to ensure a mechanical and electrical connection between said element and the metallized substrate.