Electrolyte for a solid-state battery includes a body having grains of inorganic material sintered to one another, where the grains include lithium. The body is thin, has little porosity by volume, and has high ionic conductivity.

Electrolyte for a solid-state battery includes a body having grains of inorganic material sintered to one another, where the grains include lithium. The body is thin, has little porosity by volume, and has high ionic conductivity.

A nanowire bonding interconnect for fine-pitch microelectronics is provided. Vertical nanowires created on conductive pads provide a debris-tolerant bonding layer for making direct metal bonds between opposing pads or vias. Nanowires may be grown from a nanoporous medium with a height between 200-1000 nanometers and a height-to-diameter aspect ratio that enables the nanowires to partially collapse against the opposing conductive pads, creating contact pressure for nanowires to direct-bond to opposing pads. Nanowires may have diameters less than 200 nanometers and spacing less than 1 μm from each other to enable contact or direct-bonding between pads and vias with diameters under 5 μm at very fine pitch. The nanowire bonding interconnects may be used with or without tinning, solders, or adhesives. A nanowire forming technique creates a nanoporous layer on conductive pads, creates nanowires within pores of the nanoporous layer, and removes at least part of the nanoporous layer to reveal a layer of nanowires less than 1 μm in height for direct bonding.

A nanowire bonding interconnect for fine-pitch microelectronics is provided. Vertical nanowires created on conductive pads provide a debris-tolerant bonding layer for making direct metal bonds between opposing pads or vias. Nanowires may be grown from a nanoporous medium with a height between 200-1000 nanometers and a height-to-diameter aspect ratio that enables the nanowires to partially collapse against the opposing conductive pads, creating contact pressure for nanowires to direct-bond to opposing pads. Nanowires may have diameters less than 200 nanometers and spacing less than 1 μm from each other to enable contact or direct-bonding between pads and vias with diameters under 5 μm at very fine pitch. The nanowire bonding interconnects may be used with or without tinning, solders, or adhesives. A nanowire forming technique creates a nanoporous layer on conductive pads, creates nanowires within pores of the nanoporous layer, and removes at least part of the nanoporous layer to reveal a layer of nanowires less than 1 μm in height for direct bonding.

A microelectronic assembly includes a first substrate having a surface and a first conductive element and a second substrate having a surface and a second conductive element. The assembly further includes an electrically conductive alloy mass joined to the first and second conductive elements. First and second materials of the alloy mass each have a melting point lower than a melting point of the alloy. A concentration of the first material varies in concentration from a relatively higher amount at a location disposed toward the first conductive element to a relatively lower amount toward the second conductive element, and a concentration of the second material varies in concentration from a relatively higher amount at a location disposed toward the second conductive element to a relatively lower amount toward the first conductive element.

A microelectronic assembly includes a first substrate having a surface and a first conductive element and a second substrate having a surface and a second conductive element. The assembly further includes an electrically conductive alloy mass joined to the first and second conductive elements. First and second materials of the alloy mass each have a melting point lower than a melting point of the alloy. A concentration of the first material varies in concentration from a relatively higher amount at a location disposed toward the first conductive element to a relatively lower amount toward the second conductive element, and a concentration of the second material varies in concentration from a relatively higher amount at a location disposed toward the second conductive element to a relatively lower amount toward the first conductive element.

A pre-soldered circuit carrier includes a carrier having a metal die attach surface, a plated solder region on the metal die attach surface, wherein a maximum thickness of the plated solder region is at most 50 μm, the plated solder region has a lower melting point than the first bond pad, and the plated solder region forms one or more intermetallic phases with the die attach surface at a soldering temperature that is above the melting point of the plated solder region.

Various embodiments of the present application are directed towards a method for forming an integrated chip in which a group III-V device is bonded to a substrate, as well as the resulting integrated chip. In some embodiments, the method includes: forming a chip including an epitaxial stack, a metal structure on the epitaxial stack, and a diffusion layer between the metal structure and the epitaxial stack; bonding the chip to a substrate so the metal structure is between the substrate and the epitaxial stack; and performing an etch into the epitaxial stack to form a mesa structure with sidewalls spaced from sidewalls of the diffusion layer. The metal structure may, for example, be a metal bump patterned before the bonding or may, for example, be a metal layer that is on an etch stop layer and that protrudes through the etch stop layer to the diffusion layer.

The present invention relates to a method of forming a joint bonding together two solid objects and joints made by the method, where the joint is formed by a layer of a binary system which upon heat treatment forms a porous, coherent and continuous single solid-solution phase extending across a bonding layer of the joint.

The present invention relates to a method of forming a joint bonding together two solid objects and joints made by the method, where the joint is formed by a layer of a binary system which upon heat treatment forms a porous, coherent and continuous single solid-solution phase extending across a bonding layer of the joint.