Several embodiments of the present technology are directed to bonding sheets having enhanced plasma resistant characteristics, and being used to bond to semiconductor devices. In some embodiments, a bonding sheet in accordance with the present technology comprises a base bond material having one or more thermal conductivity elements embedded therein, and one or more etched openings formed around particular regions or corresponding features of the adjacent semiconductor components. The bond material can include PDMS, FFKM, or a silicon-based polymer, and the etch resistant components can include PEEK, or PEEK-coated components.

A semiconductor device includes an integrated circuit attached to a chip carrier in a flip chip configuration. A substrate extends to a back surface of the integrated circuit, and an interconnect region extends to a front surface of the integrated circuit. A substrate bond pad is disposed at the front surface, and is electrically coupled through the interconnect region to the semiconductor material. The chip carrier includes a substrate lead at a front surface of the chip carrier. The substrate lead is electrically coupled to the substrate bond pad. An electrically conductive compression sheet is disposed on the back surface of the integrated circuit, with lower compression tips making electrical contact with the semiconductor material in the substrate. The electrically conductive compression sheet is electrically coupled to the substrate lead of the chip carrier by a back surface shunt disposed outside of the integrated circuit.

Methods for bonding substrates used, for example, in substrate-level packaging, are provided herein. In some embodiments, a method for bonding substrates includes: performing electrochemical deposition (ECD) to deposit at least one material on each of a first substrate and a second substrate, performing chemical mechanical polishing (CMP) on the first substrate and the second substrate to form a bonding interface on each of the first substrate and the second substrate, positioning the first substrate on the second substrate so that the bonding interface on the first substrate aligns with the bonding interface on the second substrate, and bonding the first substrate to the second substrate using the bonding interface on the first substrate and the bonding interface on the second substrate.

A semiconductor device includes an integrated circuit attached to a chip carrier in a flip chip configuration. A substrate extends to a back surface of the integrated circuit, and an interconnect region extends to a front surface of the integrated circuit. A substrate bond pad is disposed at the front surface, and is electrically coupled through the interconnect region to the semiconductor material. The chip carrier includes a substrate lead at a front surface of the chip carrier. The substrate lead is electrically coupled to the substrate bond pad. An electrically conductive compression sheet is disposed on the back surface of the integrated circuit, with lower compression tips making electrical contact with the semiconductor material in the substrate. The electrically conductive compression sheet is electrically coupled to the substrate lead of the chip carrier by a back surface shunt disposed outside of the integrated circuit.

A package structure includes a first substrate, a second substrate, a plurality of conductive pillars and an adhesive layer. The first substrate includes a plurality of vias and a plurality of pads. The pads are disposed on the first substrate, and fill in the vias. The second substrate is disposed opposite to the first substrate. Each conductive pillar electrically connects each pad and the second substrate, and the adhesive layer fills in the gaps between the conductive pillars. A bonding method of the package structure is also provided.

An LED subpixel can be provided with a reflector layer that controls viewing angles. After formation of an array of nanowires including first conductivity type cores and active layers, a second conductivity type semiconductor material layer, a transparent conductive oxide layer, and a dielectric material layer are sequentially formed. An opening is formed through the dielectric material layer over the array of nanowires. The reflector layer can be formed around the array of nanowires and through the opening in the dielectric material layer on the transparent conductive oxide layer. A conductive bonding structure is formed in electrical contact with the reflector layer.

A component-embedded packaging structure is provided, in which a plurality of metal layers are formed on an inactive surface of a semiconductor chip so as to serve as a buffer portion, and the semiconductor chip is disposed on a carrying portion with the buffer portion via an adhesive. Then, the semiconductor chip is encapsulated by an insulating layer, and a build-up circuit structure is formed on the insulating layer and electrically connected to the semiconductor chip. Therefore, the buffer portion can prevent delamination from occurring between the semiconductor chip and the adhesive on the carrying portion if the semiconductor chip has a CTE (Coefficient of Thermal Expansion) less than a CTE of the adhesive.

A semiconductor package includes a first substrate, a semiconductor chip, a leadframe comprising at least one lead, and an encapsulant. A lower main face of the encapsulant includes a first portion extending in a first plane, a second portion extending in a second plane, a third portion extending in a first transition zone between the first plane and the second plane, and a fourth portion extending in a second transition zone between the second plane and the at least one lead. Both the first portion of the encapsulant and a lower main face of the first substrate extend in the first plane forming a lower heat dissipation surface of the package. The second portion, the third portion and the fourth portion of the encapsulant are dimensioned so as to keep a first predefined minimum distance between the first portion of the encapsulant and the at least one lead.

Embodiments of the present disclosure provide an anisotropic conductive film and a forming method thereof, an ACF roll, a bonding structure and a display device. The anisotropic conductive film (ACF) includes: an insulating adhesive layer, including a plurality of preset regions corresponding to electrodes to be bonded and spaced from each other; and capsule structures, dispersed in the insulating adhesive layer of the plurality of preset regions and configured to realize a electrical connection in a direction perpendicular to a surface of the ACF when the ACF is subjected to a pressure in the direction perpendicular to the surface of the ACF, wherein a number of the capsule structures in each of the plurality of preset regions is greater than a preset number.

An emission enhancement structure having at least one energy augmentation structure; and an energy converter capable of receiving energy from an energy source, converting the energy and emitting therefrom a light of a different energy than the received energy. The energy converter is disposed in a vicinity of the at least one energy augmentation structure such that the emitted light is emitted with an intensity larger than if the converter were remote from the at least one energy augmentation structure. Also described are various uses for the energy emitters, energy augmentation structures and energy collectors in a wide array of fields, including various adhesives applications.