A semiconductor module includes: a first conductive portion; a second conductive portion spaced from the first conductive portion in a first direction; first semiconductor elements electrically bonded to the first conductive portion and mutually spaced in a second direction perpendicular to the first direction; and second semiconductor elements electrically bonded to the second conductive portion and mutually spaced in the second direction. The semiconductor module further includes: a first input terminal electrically connected to the first conductive portion; a second input terminal of opposite polarity to the first input terminal; and an output terminal opposite from the two input terminals in the first direction and electrically connected to the second conductive portion. The semiconductor module further includes: a first conducting member connected to the first semiconductor elements and second conductive portion; and a second conducting member connected to the second semiconductor elements and second input terminal.

A semiconductor device includes a metal body; a bonding layer placed on the metal body; and a semiconductor chip placed on the bonding layer. The bonding layer includes a filler-containing first layer formed between the metal body and the semiconductor chip and a second layer bonded to the first layer and the semiconductor chip. The second layer has a thermal expansion coefficient higher than that of the first layer.

A method includes performing a double patterning process to form a first mandrel, a second mandrel, and a third mandrel, with the third mandrel being between the first mandrel and the second mandrel, and etching the third mandrel to cut the third mandrel into a fourth mandrel and a fifth mandrel, with an opening separating the fourth mandrel from the fifth mandrel. A spacer layer is formed on sidewalls of the first, the second, the fourth, and the fifth mandrels, wherein the opening is fully filled by the spacer layer. Horizontal portions of the spacer layer are removed, with vertical portions of the spacer layer remaining un-removed. A target layer is etched using the first, the second, the fourth, and the fifth mandrels and the vertical portions of the spacer layer as an etching mask, with trenches formed in the target layer. The trenches are filled with a filling material.

A semiconductor module includes: a first conductive portion; a second conductive portion spaced from the first conductive portion in a first direction; first semiconductor elements electrically bonded to the first conductive portion and mutually spaced in a second direction perpendicular to the first direction; and second semiconductor elements electrically bonded to the second conductive portion and mutually spaced in the second direction. The semiconductor module further includes: a first input terminal electrically connected to the first conductive portion; a second input terminal of opposite polarity to the first input terminal; and an output terminal opposite from the two input terminals in the first direction and electrically connected to the second conductive portion. The semiconductor module further includes: a first conducting member connected to the first semiconductor elements and second conductive portion; and a second conducting member connected to the second semiconductor elements and second input terminal.

A semiconductor module includes: a first conductive portion; a second conductive portion spaced from the first conductive portion in a first direction; first semiconductor elements electrically bonded to the first conductive portion and mutually spaced in a second direction perpendicular to the first direction; and second semiconductor elements electrically bonded to the second conductive portion and mutually spaced in the second direction. The semiconductor module further includes: a first input terminal electrically connected to the first conductive portion; a second input terminal of opposite polarity to the first input terminal; and an output terminal opposite from the two input terminals in the first direction and electrically connected to the second conductive portion. The semiconductor module further includes: a first conducting member connected to the first semiconductor elements and second conductive portion; and a second conducting member connected to the second semiconductor elements and second input terminal.

A semiconductor device includes a metal body; a bonding layer placed on the metal body; and a semiconductor chip placed on the bonding layer. The bonding layer includes a filler-containing first layer formed between the metal body and the semiconductor chip and a second layer bonded to the first layer and the semiconductor chip. The second layer has a thermal expansion coefficient higher than that of the first layer.

A bonded assembly of a primary semiconductor die and a complementary semiconductor die includes first pairs of first primary bonding pads and first complementary bonding pads that are larger in area than the first primary bonding pads, and second pairs of second primary bonding pads and second complementary bonding pads that are smaller in area than the second primary bonding pads.

A method includes performing a double patterning process to form a first mandrel, a second mandrel, and a third mandrel, with the third mandrel being between the first mandrel and the second mandrel, and etching the third mandrel to cut the third mandrel into a fourth mandrel and a fifth mandrel, with an opening separating the fourth mandrel from the fifth mandrel. A spacer layer is formed on sidewalls of the first, the second, the fourth, and the fifth mandrels, wherein the opening is fully filled by the spacer layer. Horizontal portions of the spacer layer are removed, with vertical portions of the spacer layer remaining un-removed. A target layer is etched using the first, the second, the fourth, and the fifth mandrels and the vertical portions of the spacer layer as an etching mask, with trenches formed in the target layer. The trenches are filled with a filling material.

A method includes performing a double patterning process to form a first mandrel, a second mandrel, and a third mandrel, with the third mandrel being between the first mandrel and the second mandrel, and etching the third mandrel to cut the third mandrel into a fourth mandrel and a fifth mandrel, with an opening separating the fourth mandrel from the fifth mandrel. A spacer layer is formed on sidewalls of the first, the second, the fourth, and the fifth mandrels, wherein the opening is fully filled by the spacer layer. Horizontal portions of the spacer layer are removed, with vertical portions of the spacer layer remaining un-removed. A target layer is etched using the first, the second, the fourth, and the fifth mandrels and the vertical portions of the spacer layer as an etching mask, with trenches formed in the target layer. The trenches are filled with a filling material.

A semiconductor module includes: a first conductive portion; a second conductive portion spaced from the first conductive portion in a first direction; first semiconductor elements electrically bonded to the first conductive portion and mutually spaced in a second direction perpendicular to the first direction; and second semiconductor elements electrically bonded to the second conductive portion and mutually spaced in the second direction. The semiconductor module further includes: a first input terminal electrically connected to the first conductive portion; a second input terminal of opposite polarity to the first input terminal; and an output terminal opposite from the two input terminals in the first direction and electrically connected to the second conductive portion. The semiconductor module further includes: a first conducting member connected to the first semiconductor elements and second conductive portion; and a second conducting member connected to the second semiconductor elements and second input terminal.