A multi-layer pillar and method of fabricating the same is provided. The multi-layer pillar is used as an interconnect between a chip and substrate. The pillar has at least one low strength, high ductility deformation region configured to absorb force imposed during chip assembly and thermal excursions

A multi-layer pillar and method of fabricating the same is provided. The multi-layer pillar is used as an interconnect between a chip and substrate. The pillar has at least one low strength, high ductility deformation region configured to absorb force imposed during chip assembly and thermal excursions

A method includes the steps of: preparing a lead frame including a plurality of die pads, and preparing a plurality of semiconductor chips; disposing each of the semiconductor chips on a respective one of the die pads; forming a sealing resin to cover the die pads and the semiconductor chips; and attaching a heat dissipation plate to the die pads by pressing the heat dissipation plate against the die pads via a resin sheet which is an adhesive layer after the sealing resin is formed.

A method includes the steps of: preparing a lead frame including a plurality of die pads, and preparing a plurality of semiconductor chips; disposing each of the semiconductor chips on a respective one of the die pads; forming a sealing resin to cover the die pads and the semiconductor chips; and attaching a heat dissipation plate to the die pads by pressing the heat dissipation plate against the die pads via a resin sheet which is an adhesive layer after the sealing resin is formed.

A method includes the steps of: preparing a lead frame including a plurality of die pads, and preparing a plurality of semiconductor chips; disposing each of the semiconductor chips on a respective one of the die pads; forming a sealing resin to cover the die pads and the semiconductor chips; and attaching a heat dissipation plate to the die pads by pressing the heat dissipation plate against the die pads via a resin sheet which is an adhesive layer after the sealing resin is formed.

A method includes the steps of: preparing a lead frame including a plurality of die pads, and preparing a plurality of semiconductor chips; disposing each of the semiconductor chips on a respective one of the die pads; forming a sealing resin to cover the die pads and the semiconductor chips; and attaching a heat dissipation plate to the die pads by pressing the heat dissipation plate against the die pads via a resin sheet which is an adhesive layer after the sealing resin is formed.

A semiconductor chip having four sides and being substantially formed in a rectangle, and including a first terminal which is located along one side of the four sides of the semiconductor chip and which is to be electrically connected to a solar cell outside the semiconductor chip; a second terminal which is located along the one side of the semiconductor chip and which is to be electrically connected to a secondary cell outside the semiconductor chip; and an interconnection line that electrically interconnects the first terminal and the second terminal.

A semiconductor chip having four sides and being substantially formed in a rectangle, and including a first terminal which is located along one side of the four sides of the semiconductor chip and which is to be electrically connected to a solar cell outside the semiconductor chip; a second terminal which is located along the one side of the semiconductor chip and which is to be electrically connected to a secondary cell outside the semiconductor chip; and an interconnection line that electrically interconnects the first terminal and the second terminal.

A carrier board having two opposite surfaces is provided and a releasing film and a metal layer are formed on the two opposite surfaces respectively. Each metal layer formed with positioning pads is covered with a first hot-melt-dielectric layer where a passive component is disposed. The passive component has upper and lower surfaces each having electrode pads. Each first hot-melt-dielectric layer is disposed on a core board having a cavity to receive the passive component. A second hot-melt-dielectric layer is stacked on each core board. The first and second hot-melt-dielectric layers are heat pressed to form two dielectric layer units each having a top surface and a bottom surface. The carrier board and the releasing films are removed to separate the dielectric layer units. Wiring layers are formed on each top surface and each bottom surface and electrically connected to the electrode pads of the upper and lower surfaces respectively.

A carrier board having two opposite surfaces is provided and a releasing film and a metal layer are formed on the two opposite surfaces respectively. Each metal layer formed with positioning pads is covered with a first hot-melt-dielectric layer where a passive component is disposed. The passive component has upper and lower surfaces each having electrode pads. Each first hot-melt-dielectric layer is disposed on a core board having a cavity to receive the passive component. A second hot-melt-dielectric layer is stacked on each core board. The first and second hot-melt-dielectric layers are heat pressed to form two dielectric layer units each having a top surface and a bottom surface. The carrier board and the releasing films are removed to separate the dielectric layer units. Wiring layers are formed on each top surface and each bottom surface and electrically connected to the electrode pads of the upper and lower surfaces respectively.