A semiconductor device includes a silicon layer, a metal silicide layer arranged directly on the silicon layer, and a solder layer arranged directly on the metal silicide layer.

Some embodiments relate to an electronic package. The electronic package includes a first die and a second die stacked onto the first die. A first encapsulant is positioned between the first die and the second die. The first encapsulant includes a first material that covers a first volume between the first die and the second die. A second encapsulant is positioned between the first die and the second die. The second encapsulant includes a second material that covers a second volume between the first die and the second die. The first material has a higher thermal conductivity than the second material, and the second material more effectively promotes electrical connections between the first die and the second die as compared to the first material.

A device and a method for producing a device are disclosed. In an embodiment the device includes a first component; a second component; and a connecting element arranged between the first component and the second component, wherein the connecting element comprises at least a first phase and a second phase, wherein the first phase comprises a first metal having a first concentration, a second metal having a second concentration and a third metal having a third concentration, wherein the second phase comprises the first metal having a fourth concentration, the second metal and the third metal, wherein the first metal, the second metal and the third metal are different from one another and are suitable for reacting at a processing temperature of less than 200 C., and wherein the following applies: c11c25 and c11c13c12.

A method of transferring micro devices is provided. A carrier substrate including a buffer layer and a plurality of micro devices is provided. The buffer layer is located between the carrier substrate and the micro devices. The micro devices are separated from one another and positioned on the carrier substrate through the buffer layer. A receiving substrate contacts the micro devices disposed on the carrier substrate. A temperature of at least one of the carrier substrate and the receiving substrate is changed, so that at least a portion of the micro devices are released from the carrier substrate and transferred onto the receiving substrate. A number of the at least a portion of the micro devices is between 1000 and 2000000.

One or more chips are transferred from one substrate to another by using one or more polymer layers to secure the one or more chips to an intermediate carrier substrate. While secured to the intermediate carrier substrate, the one or more chips may be transported or put through further processing or fabrication steps. To release the one or more chips, the adhesion strength of the one or more polymer layers is gradually reduced to minimize potential damage to the one or more chips.

A semiconductor package includes a first structure, a first semiconductor chip on the first structure, a first conductive pad on the first structure between the first structure and the first semiconductor chip, a second conductive pad on a lower surface of the first semiconductor chip and vertically overlapping the first conductive pad, a bump connecting the first conductive pad and the second conductive pad, a first adhesive layer surrounding at least a part of side walls of the bump and side walls of the first conductive pad, and a second adhesive layer surrounding at least a part of the side walls of the bump and side walls of the second conductive pad, the second adhesive layer including a material different from the first adhesive layer, wherein a horizontal width of the first adhesive layer is smaller than a horizontal width of the second adhesive layer.

A package structure and a formation method of a package structure are provided. The method includes disposing a chip structure over a substrate and forming a first adhesive element directly on the chip structure. The first adhesive element has a first thermal conductivity. The method also includes forming a second adhesive element directly on the chip structure. The second adhesive element has a second thermal conductivity, and the second thermal conductivity is greater than the first thermal conductivity. The method further includes attaching a protective lid to the chip structure through the first adhesive element and the second adhesive element.

A semiconductor package includes a substrate, a first semiconductor chip and a second semiconductor chip adjacent to each other on the substrate, and a plurality of bumps on lower surfaces of the first and second semiconductor chips. The first and second semiconductor chips have facing first side surfaces and second side surfaces opposite to the first side surfaces. The bumps are arranged at a higher density in first regions adjacent to the first side surfaces than in second regions adjacent to the second side surfaces.

A device and a method for producing a device are disclosed. In an embodiment the device includes a first component; a second component; and a connecting element arranged between the first component and the second component, wherein the connecting element comprises at least a first phase and a second phase, wherein the first phase comprises a first metal having a first concentration, a second metal having a second concentration and a third metal having a third concentration, wherein the second phase comprises the first metal having a fourth concentration, the second metal and the third metal, wherein the first metal, the second metal and the third metal are different from one another and are suitable for reacting at a processing temperature of less than 200 C., and wherein the following applies: c11c25 and c11 c13c12.

A sensor packaging method and a sensor package are provided. The method includes: providing a substrate having upper and lower board surfaces, in which the upper board surface has a die-bonding region. The substrate includes a core material layer, an upper metal layer, and an upper protection layer, a first window is formed to penetrate the upper protection layer and located at a periphery of the die-bonding region, and the first window is opened for a first ground electrode connected to a first ground portion. The method further includes: performing a dispensing step to apply an adhesive material on the upper board surface in at least a portion of the die-bonding region; and attaching a sensor die to the substrate through the adhesive material, in which the sensor die is disposed in the die-bonding region and has a first ground pin electrically connected to the first ground electrode.