The present disclosure provides a method for preparing a semiconductor device with a composite dielectric structure. The method includes forming a photoresist pattern structure over a first semiconductor die. The method also includes forming a second dielectric layer surrounding the photoresist pattern structure, and removing the photoresist pattern structure to form a first opening in the second dielectric layer. The method further includes forming dielectric spacers along sidewalls of the first opening, and forming an interconnect structure surrounded by the dielectric spacers. In addition, the method includes bonding a second semiconductor die to the second dielectric layer. The second semiconductor die includes a second conductive pad facing the interconnect structure, and the second conductive pad is electrically connected to the first conductive pad of the first semiconductor die through the interconnect structure.

RF transistor amplifiers an RF transistor amplifier die having a semiconductor layer structure, an interconnect structure having first and second opposing sides, wherein the first side of the interconnect structure is adjacent a surface of the RF transistor amplifier die such that the interconnect structure and the RF transistor amplifier die are in a stacked arrangement, and one or more circuit elements on the first and/or second side of the interconnect structure.

A method for manufacturing a semiconductor device of an embodiment includes: dividing a semiconductor wafer including a plurality of chip areas each having a columnar electrode and dicing areas, along the dicing areas to form a plurality of semiconductor chips; sticking a first resin film on the plurality of semiconductor chips while filling parts of the first resin film in gaps each present between adjacent ones of the plurality of semiconductor chips; forming trenches narrower in width than the gaps in the first resin film filled in the gaps; and sequentially picking up the plurality of semiconductor chips each having the first resin film, and mounting the picked semiconductor chip on a substrate.

A method of forming a semiconductor structure includes following steps. A first wafer is bonded to a second wafer, in which the first wafer includes a first substrate and a first conductive pad above a first surface of the first substrate, and the second wafer comprises a second substrate and a second conductive pad above a second surface of the second substrate. A mask layer is formed above the first substrate. The mask layer and the first substrate are etched to form a first opening in the first substrate. A sacrificial spacer is formed in the first substrate at a sidewall of the first opening. The first conductive pad is etched to form a second opening communicated to the first opening. A conductive material is filled in the first opening and the second opening to form a conductive structure interconnecting the first and second conductive pads.

An embodiment a structure including a first semiconductor device bonded to a first side of a first redistribution structure by first conductive connectors, the first semiconductor device comprising a first plurality of passive elements formed on a first substrate, the first redistribution structure comprising a plurality of dielectric layers with metallization patterns therein, the metallization patterns of the first redistribution structure being electrically coupled to the first plurality of passive elements, a second semiconductor device bonded to a second side of the first redistribution structure by second conductive connectors, the second side of the first redistribution structure being opposite the first side of the first redistribution structure, the second semiconductor device comprising a second plurality of passive elements formed on a second substrate, the metallization patterns of the first redistribution structure being electrically coupled to the second plurality of passive elements.

A packaged semiconductor includes a substrate and a first component disposed on the substrate. The package includes an underfill that is dispensed under and around the first component. The package also includes a second component disposed on the substrate adjacent to the first component that provides a border to the underfill.

A packaged semiconductor includes a substrate and a first component disposed on the substrate. The package includes an underfill that is dispensed under and around the first component. The package also includes a second component disposed on the substrate adjacent to the first component that provides a border to the underfill.

A method of forming a semiconductor structure includes following steps. A first wafer is bonded to a second wafer, in which the first wafer includes a first substrate and a first conductive pad above a first surface of the first substrate, and the second wafer comprises a second substrate and a second conductive pad above a second surface of the second substrate. A mask layer is formed above the first substrate. The mask layer and the first substrate are etched to form a first opening in the first substrate. A sacrificial spacer is formed in the first substrate at a sidewall of the first opening. The first conductive pad is etched to form a second opening communicated to the first opening. A conductive material is filled in the first opening and the second opening to form a conductive structure interconnecting the first and second conductive pads.

A warped semiconductor die is attached onto a substrate such as a leadframe by dispensing a first mass of die attach material onto an area of the substrate followed by dispensing a second mass of die attach material so that the second mass of die attach material provides a raised formation of die attach material. For instance, the second mass may be deposited centrally of the first mass. The semiconductor die is placed onto the first and second mass of die attach material with its concave/convex shape matching the distribution of the die attach material thus effectively countering undesired entrapment of air.

A warped semiconductor die is attached onto a substrate such as a leadframe by dispensing a first mass of die attach material onto an area of the substrate followed by dispensing a second mass of die attach material so that the second mass of die attach material provides a raised formation of die attach material. For instance, the second mass may be deposited centrally of the first mass. The semiconductor die is placed onto the first and second mass of die attach material with its concave/convex shape matching the distribution of the die attach material thus effectively countering undesired entrapment of air.