In one example, a semiconductor device, comprises a substrate having a top side and a conductor on the top side of the substrate, an electronic device on the top side of the substrate connected to the conductor on the top side of the substrate via an internal interconnect, a lid covering a top side of the electronic device, and a thermal material between the top side of the electronic device and the lid, wherein the lid has a through-hole. Other examples and related methods are also disclosed herein.

A display device includes a display panel having a display area and a non-display area surrounding the display area, and a decorative film disposed on the display panel. The decorative film includes a porous layer disposed on the display panel and including a plurality of pores, and a decorative layer which overlaps the non-display area and is disposed in the porous layer. Accordingly, the decorative layer which is partially disposed is formed in the porous layer so that a step caused by the decorative layer is not formed or minimized to reduce the thickness of the decorative film. As a result, the design the display device can be slim, and a flexible display device with an excellent folding reliability can be provided based on the display device.

One aspect of the invention is a method of manufacturing a connection structure, including disposing an adhesive layer between a first electronic member including a first substrate and a first electrode formed on the first substrate and a second electronic member including a second substrate and a second electrode formed on the second substrate, and pressure-bonding the first electronic member and the second electronic member via the adhesive layer such that the first electrode and the second electrode are electrically connected to each other, wherein the first electronic member further including an insulating layer formed on a side of the first electrode opposite to the first substrate, and the adhesive layer including: a first conductive particle being a dendritic conductive particle; and a second conductive particle being a conductive particle other than the first conductive particle and having a non-conductive core and a conductive layer provided on the core.

The semiconductor device of the present embodiment includes a lead frame having a projection portion, the projection portion having an upper face and a side face, a semiconductor chip provided above the projection portion, and a bonding material provided between the projection portion and the semiconductor chip, the bonding material being in contact with the upper face and the side face, the bonding material bonding the lead frame and the semiconductor chip.

Semiconductor devices, such as vertical-cavity surface-emitting lasers, and methods for manufacturing the same, are disclosed. The semiconductor devices include contact extensions and electrically conductive adhesive material, such as fusible metal alloys or electrically conductive composites. In some instances, the semiconductor devices further include structured contacts. These components enable the production of semiconductor devices having minimal distortion. For example, arrays of vertical-cavity surface-emitting lasers can be produced exhibiting little to no bowing. Semiconductor devices having minimal distortion exhibit enhanced performance in some instances.

According to the present disclosure, a semiconductor apparatus comprises an insulating substrate. A porous material is directly bonded to the insulating substrate. And a semiconductor device is bonded to the porous material via a bonding material. The bonding material contains metal nanoparticles.

The semiconductor device of the present embodiment includes a lead frame having a projection portion, the projection portion having an upper face and a side face, a semiconductor chip provided above the projection portion, and a bonding material provided between the projection portion and the semiconductor chip, the bonding material being in contact with the upper face and the side face, the bonding material bonding the lead frame and the semiconductor chip.

A semiconductor package is disclosed. The package includes a package substrate having top and bottom major package substrate surfaces, the top major package surface including a die region. A die having first and second major die surfaces is attached onto the die region. The second major die surface is attached to the die region. The first major die surface includes a sensor region and a cover adhesive region surrounding the sensor region. The package also includes applying a cover adhesive to the cover adhesive region on the first major die surface. A protective cover with first and second major cover surfaces and side surfaces is attached to the die using the cover adhesive. The second major cover surface contacts the cover adhesive. The protective cover covers the sensor region. The protective cover includes a recessed structure on the second major cover surface. The recessed structure is located above die bond pads on the die to create an elevated space over peak portions of wire bonds on the die bond pads. An encapsulant is disposed on the package substrate to cover exposed portions of the package substrate, die and bond wires and side surfaces of the protective cover, while leaving the first major cover surface exposed.

A method of manufacturing an electronic device includes providing a core dielectric layer with two conductive layers formed on two opposite surfaces of the core dielectric layer, and removing at least a portion of each of the two conductive layers to respectively form an antenna pattern and a circuit pattern of a chip package at the two opposite surfaces of the core dielectric layer.

An electronic device includes a substrate, a first pad disposed on the substrate, a second pad disposed opposite to the first pad, and a conductive particle disposed between the first pad and the second pad. The first pad has a recess, and a part of the conductive particle sinks in the recess.