A light-emitting apparatus includes a substrate, pads disposed on the substrate, a sacrificial pattern layer and a light-emitting diode element disposed on the sacrificial pattern layer. The light-emitting diode element includes a first type semiconductor layer, a second type semiconductor layer, an active layer, and electrodes. A connection patterns disposed on at least one of the electrodes and the pads. Materials of the connection patterns include hot fluidity conductive materials. The connection patterns cover a sidewall of the sacrificial pattern layer and are electrically connected to the at least one of the electrodes and the pads. In addition, the manufacturing method of the above light-emitting apparatus is also proposed.

The present disclosure provides a method of creating a bond between a first object and a second object. For example, at least one insert may be provided at a location in a space formed between the first object and the second object. In additional, a filler material may be provided proximal to the location. An inter-diffusion layer may be formed, wherein a first portion of the inter-diffusion layer is formed by diffusion between the filler material and the at least one insert, wherein a second portion of the inter-diffusion layer is formed between the filler material and the first object, wherein a third portion of the inter-diffusion layer is formed between the filler material and the second object, wherein the first portion is coadunate with each of the second portion and third portion.

A semiconductor device package includes a carrier provided with a first conductive element, a second conductive element arranged on a semiconductor disposed on the carrier, and a second semiconductor device disposed on and across the first conductive element and the first semiconductor device, wherein the first conductive element having a surface that is substantially coplanar with a surface of the second conductive element.

Semiconductor devices, such as vertical-cavity surface-emitting lasers, and methods for manufacturing the same, are disclosed. The semiconductor devices include contact extensions and electrically conductive adhesive material, such as fusible metal alloys or electrically conductive composites. In some instances, the semiconductor devices further include structured contacts. These components enable the production of semiconductor devices having minimal distortion. For example, arrays of vertical-cavity surface-emitting lasers can be produced exhibiting little to no bowing. Semiconductor devices having minimal distortion exhibit enhanced performance in some instances.

A semiconductor package includes a substrate, a first semiconductor chip disposed on the substrate, and a second semiconductor chip disposed on a top surface of the first semiconductor chip. The first semiconductor chip includes a conductive pattern disposed on the top surface of the first semiconductor chip and a first protective layer covering the top surface of the first semiconductor chip and at least partially surrounds the conductive pattern. The second semiconductor chip includes a first pad that contacts a first through electrode on a bottom surface of the second semiconductor chip. A second protective layer surrounds the first pad and covers the bottom surface of the second semiconductor chip. A third protection layer fills a first recess defined in the second protective layer to face the inside of the second protective layer. The first protective layer and the third protective layer contact each other.

The present disclosure provides a method of creating a bond between a first object and a second object. For example, creating a joint or die attach between a semiconductor chip and an electronic substrate, especially for harsh and high temperature environments. The method may include a step of filling a space between the first object and the second object with a filler material. Further, the method may include a step of heating the filler material to facilitate formation of a plurality of inter-diffusion layers. Accordingly, a first inter-diffusion layer may be formed between the filler material and the first object. Further, a second inter-diffusion layer may be formed between the filler material and the second object. Furthermore, in some embodiments, the first inter-diffusion layer may be contiguous with the second inter-diffusion layer. The contiguity may be facilitated by placement of at least one insert between the first object and the second object, in which the inter-diffusion of the filler material and the at least one insert may produce the third inter-diffusion layer, wherein the third inter-diffusion layer is contiguous with each of the first inter-diffusion layer and the second inter-diffusion layer.

A process of forming a semiconductor device is disclosed, where the semiconductor device provides a substrate. The process includes steps of: (a) depositing a first metal layer containing nickel (Ni) on a secondary surface of the substrate and within a substrate via provided in the substrate; (b) depositing a second metal layer on the first metal layer by electrolytic plating; (c) depositing a third metal layer on the second metal layer, where the third metal layer contains at least one of Ni and titanium (Ti); (d) exposing the second metal layer in a portion that excepts the substrate via and a periphery of the substrate via by partly removing the third metal layer; and (e) die-bonding the semiconductor device on an assembly substrate by interposing solder between the secondary surface of the substrate and the assembly substrate.

A manufacturing method of a semiconductor apparatus includes preparing an intermediate member that includes a first member having a first substrate comprising a semiconductor element formed thereon, a second member having a second substrate, the second substrate including a part of a circuit electrically connected to the semiconductor element and having a linear expansion coefficient different from that of the first substrate, and a third member having a third substrate showing such a linear expansion coefficient that a difference between itself and the linear expansion coefficient of the first substrate is smaller than a difference between the linear expansion coefficients of the first substrate and the second substrate, and includes bonding the first member and the second member together. A first bonding electrode containing copper electrically connected to the semiconductor element and a second bonding electrode containing copper electrically connected to the circuit are bonded together.

A semiconductor package including a substrate; a semiconductor stack on the substrate; an underfill between the substrate and the semiconductor stack; an insulating layer conformally covering surfaces of the semiconductor stack and the underfill; a chimney on the semiconductor stack; and a molding member surrounding side surfaces of the chimney, wherein the semiconductor stack has a first upper surface that is a first distance from the substrate and a second upper surface that is a second distance from the substrate, the first distance being greater than the second distance, wherein the chimney includes a thermally conductive filler on the first and second upper surfaces of the semiconductor stack, the thermally conductive filler having a flat upper surface; a thermally conductive spacer on the thermally conductive filler; and a protective layer on the thermally conductive spacer, and wherein an upper surface of the thermally conductive spacer is exposed.

The semiconductor device of the present embodiment includes a lead frame having a projection portion, the projection portion having an upper face and a side face, a semiconductor chip provided above the projection portion, and a bonding material provided between the projection portion and the semiconductor chip, the bonding material being in contact with the upper face and the side face, the bonding material bonding the lead frame and the semiconductor chip.