A quantum device (100) includes: an interposer (112); a quantum chip (111); a first connection part (130) that is provided between the interposer (112) and the quantum chip (111) and electrically connects a wiring layer of the interposer (112) to a wiring layer of the quantum chip (111); a predetermined signal line (w1) arranged in the wiring layer of the quantum chip (111); first shield wires (ws1) arranged in the wiring layer of the quantum chip (111) along the predetermined signal line (w1); a second shield wire (ws2) arranged in the wiring layer of the interposer (112); and a second connection part (150) that is provided between the interposer (112) and the quantum chip (111) so as to contact the first shield wires (ws1) and the second shield wire (ws2).

Semiconductor device packages may include a bottom-most semiconductor die, at least one intermediate semiconductor die stacked over the bottom-most semiconductor die, and a top-most semiconductor die located on a side of a farthest intermediate semiconductor die from the bottom-most semiconductor die opposite the bottom-most semiconductor die. The bottom-most semiconductor die and each intermediate semiconductor die may include vias extending therethrough. The bottom-most semiconductor die may have a larger foot print than each intermediate semiconductor die and the top-most semiconductor die. A dielectric material may be located between each of the semiconductor dice, at least sections of the dielectric material extending contiguously from between adjacent semiconductor dice, over sidewalls thereof, and laterally beyond the lateral peripheries all but the bottom-most semiconductor die

A chip module includes a chip having a front side and a rear side, a chip carrier having an upper side facing the chip, a contact layer formed of an electrically conductive material and arranged on the upper side of the chip carrier between the rear side of the chip and the upper side of the chip carrier, and an electrically conductive adhesive arranged on an upper side of the contact layer facing the chip. The electrically conductive adhesive connects the upper side of the contact layer and the rear side of the chip. The contact layer has a plurality of regions electrically insulated from each other and each electrically connected to the chip by the electrically conductive adhesive.

One or more embodiments are directed to semiconductor packages and methods in which one or more electrical components are positioned between a semiconductor die and a surface of a substrate. In one embodiment, a semiconductor package includes a substrate having a first surface. One or more electrical components are electrically coupled to electrical contacts on the first surface of the substrate. A semiconductor die is positioned on the one or more electrical components, and the semiconductor die has an active surface that faces away from the substrate. An adhesive layer is on the first surface of the substrate and on the one or more electrical components, and the semiconductor die is spaced apart from the one or more electrical components by the adhesive layer. Wire bonds are provided that electrically couples the active surface of the semiconductor die to the substrate.

A method includes picking up a first package component, removing an oxide layer on an electrical connector of the first package component, placing the first package component on a second package component after the oxide layer is removed, and bonding the first package component to the second package component.

A semiconductor package is disclosed. The package includes a package substrate having top and bottom major package substrate surfaces, the top major package surface including a die region. A die having first and second major die surfaces is attached onto the die region. The second major die surface is attached to the die region. The first major die surface includes a sensor region and a cover adhesive region surrounding the sensor region. The package also includes applying a cover adhesive to the cover adhesive region on the first major die surface. A protective cover with first and second major cover surfaces and side surfaces is attached to the die using the cover adhesive. The second major cover surface contacts the cover adhesive. The protective cover covers the sensor region. The protective cover includes a recessed structure on the second major cover surface. The recessed structure is located above die bond pads on the die to create an elevated space over peak portions of wire bonds on the die bond pads. An encapsulant is disposed on the package substrate to cover exposed portions of the package substrate, die and bond wires and side surfaces of the protective cover, while leaving the first major cover surface exposed.

One or more embodiments are directed to semiconductor packages and methods in which one or more electrical components are positioned between a semiconductor die and a surface of a substrate. In one embodiment, a semiconductor package includes a substrate having a first surface. One or more electrical components are electrically coupled to electrical contacts on the first surface of the substrate. A semiconductor die is positioned on the one or more electrical components, and the semiconductor die has an active surface that faces away from the substrate. An adhesive layer is on the first surface of the substrate and on the one or more electrical components, and the semiconductor die is spaced apart from the one or more electrical components by the adhesive layer. Wire bonds are provided that electrically couples the active surface of the semiconductor die to the substrate.

A module and a substrate are provided in the present disclosure. The module includes an array substrate and a flexible circuit board. The array substrate includes a binding region including a first binding region and a second binding region; and in the binding region, the flexible circuit board is bound with the array substrate. In the first binding region, the array substrate includes a first conductive soldering pad; the flexible circuit board includes a second conductive soldering pad; and the first conductive soldering pad is electrically connected to the second conductive soldering pad. In the second binding region, the array substrate includes one or more of first soldering elements; the flexible circuit board includes one or more of second soldering elements; a first soldering element of the one or more of first soldering elements is fixed with a second soldering element of the one or more of second soldering elements.

A semiconductor module includes a housing, a pin arranged in the housing and including a first contact region which has a press-fit connection, a semiconductor component arranged in the housing and electrically conductively connected to the pin, and a first substrate arranged in the housing and clamped in the housing via the pin by a non-positive locking connection, which, when formed, causes the press-fit connection to be deformed elastically and/or plastically with the first substrate. The first substrate has a first recess which is open and at least in part encompasses the pin in the first contact region. A metallic coating is applied to the first substrate at least in a region of the first recess so as to electrically conductively connect the first substrate to the semiconductor component, and a second substrate is in contact with the pin and connected within the housing in a non-releasable manner.

Semiconductor device packages may include a bottom-most semiconductor die, at least one intermediate semiconductor die stacked over the bottom-most semiconductor die, and a top-most semiconductor die located on a side of a farthest intermediate semiconductor die from the bottom-most semiconductor die opposite the bottom-most semiconductor die. The bottom-most semiconductor die and each intermediate semiconductor die may include vias extending therethrough. The bottom-most semiconductor die may have a larger foot print than each intermediate semiconductor die and the top-most semiconductor die. A dielectric material may be located between each of the semiconductor dice, at least sections of the dielectric material extending contiguously from between adjacent semiconductor dice, over sidewalls thereof, and laterally beyond the lateral peripheries all but the bottom-most semiconductor die