Some embodiments described herein include apparatuses and methods of forming such apparatuses. In one such embodiment, an apparatus may include a substrate, a first die, and a second die coupled to the first die and the substrate. The substrate may include an opening. At least a portion of the die may occupy at least a portion of the opening in the substrate. Other embodiments including additional apparatuses and methods are described.

Capacitive coupling of integrated circuit die components and other conductive areas is provided. Each component to be coupled has a surface that includes at least one conductive area, such as a metal pad or plate. An ultrathin layer of dielectric is formed on at least one surface to be coupled. When the two components, e.g., one from each die, are permanently contacted together, the ultrathin layer of dielectric remains between the two surfaces, forming a capacitor or capacitive interface between the conductive areas of each respective component. The ultrathin layer of dielectric may be composed of multiple layers of various dielectrics, but in one implementation, the overall thickness is less than approximately 50 nanometers. The capacitance per unit area of the capacitive interface formed depends on the particular dielectric constants of the dielectric materials employed in the ultrathin layer and their respective thicknesses. Electrical and grounding connections can be made at the edge of the coupled stack.

A semiconductor package having an internal heat distribution layer and methods of forming the semiconductor package are provided. The semiconductor package can include a first semiconductor device, a second semiconductor device, and an external heat distribution layer. The first semiconductor device can comprise a first semiconductor die and an external surface comprising a top surface, a bottom surface, and a side surface joining the bottom surface to the tope surface. The second semiconductor device can comprise a second semiconductor die and can be stacked on the top surface of the first semiconductor device. The external heat distribution layer can cover an external surface of the second semiconductor device and the side surface of the first semiconductor device. The external heat distribution layer further contacts an internal heat distribution layer on a top surface of the first semiconductor die.

Capacitive coupling of integrated circuit die components and other conductive areas is provided. Each component to be coupled has a surface that includes at least one conductive area, such as a metal pad or plate. An ultrathin layer of dielectric is formed on at least one surface to be coupled. When the two components, e.g., one from each die, are permanently contacted together, the ultrathin layer of dielectric remains between the two surfaces, forming a capacitor or capacitive interface between the conductive areas of each respective component. The ultrathin layer of dielectric may be composed of multiple layers of various dielectrics, but in one implementation, the overall thickness is less than approximately 50 nanometers. The capacitance per unit area of the capacitive interface formed depends on the particular dielectric constants ? of the dielectric materials employed in the ultrathin layer and their respective thicknesses. Electrical and grounding connections can be made at the edge of the coupled stack.

Some embodiments described herein include apparatuses and methods of forming such apparatuses. In one such embodiment, an apparatus may include a substrate, a first die, and a second die coupled to the first die and the substrate. The substrate may include an opening. At least a portion of the die may occupy at least a portion of the opening in the substrate. Other embodiments including additional apparatuses and methods are described.

A method for bonding a first substrate with a second substrate by means of a connecting layer that is arranged between the substrates and that is comprised of a connecting material with the following steps: applying the connecting material to the first substrate and/or the second substrate in liquid form, and distributing the connecting material between the substrates by bringing the substrates closer and as a result forming the shape of the connecting layer with a thickness t.

A method includes aligning a first electrical connector of a first package component to a second electrical connector of a second package component. With the first electrical connector aligned to the second electrical connector, a metal layer is plated on the first and the second electrical connectors. The metal layer bonds the first electrical connector to the second electrical connector.

A display apparatus includes a display panel, a driving integrated circuit (IC), and an anisotropic conductive film. The display panel includes a non-display area adjacent to a display area and an upper substrate and a lower substrate. The driving IC overlaps the non-display area. The anisotropic conductive film attaches the driving IC to the lower substrate and includes conductive balls with diameters that gradually increase toward the display area.

A semiconductor module according to one embodiment of the present invention includes: a first circuit board having thermal conductivity; a second circuit board having thermal conductivity and disposed opposing the first circuit board; a first semiconductor element joined to an opposing surface of the first circuit board opposing the second circuit board; a second semiconductor element joined to an opposing surface of the second circuit board opposing the first circuit board; and a connector electrically connecting the first semiconductor element and the second semiconductor element. The connector includes a portion which is sandwiched between the first semiconductor element and the second circuit board without through the second semiconductor element, and which is in contact with the first semiconductor element and the second circuit board.

A method includes aligning a first electrical connector of a first package component to a second electrical connector of a second package component. With the first electrical connector aligned to the second electrical connector, a metal layer is plated on the first and the second electrical connectors. The metal layer bonds the first electrical connector to the second electrical connector.