Die warpage is controlled for the assembly of thin dies. In one example, a semiconductor die has a back side and a front side opposite the back side. The back side has a semiconductor substrate and the front side has components formed over the semiconductor substrate in front side layers. A backside layer is formed over the backside of the semiconductor die to resist warpage of the die when the die is heated and a plurality of contacts are formed on the front side of the die to attach to a substrate.

A wiring substrate includes a connection pad formed in the outermost wiring layer, a dummy pad formed in the outermost wiring layer, and a dummy wiring portion formed in the outermost wiring layer, the dummy wiring portion connecting the connection pad and the dummy pad. The maximum width of each of the connection pad and the dummy pad is set to be larger than the width of the dummy wiring portion. A bump of an electronic component is flip-chip connected to a connection pad through a resin-containing solder.

Disclosed herein are microelectronic structures including bridges, as well as related assemblies and methods. In some embodiments, a microelectronic structure may include a substrate and a bridge.

According to one embodiment, a semiconductor device includes a first semiconductor element having a first surface, a second semiconductor element having a lower surface bonded to the first surface of the first semiconductor element, a gel-like silicone that covers an upper surface of the second semiconductor element, and a resin portion that covers the gel-like silicone and the first surface of the first semiconductor element.

A method of producing a filler-containing film that holds fillers and a fine solid that is made of a material different from that of the filler in an insulating resin layer and in which a predetermined arrangement of the fillers is repeated as viewed in a plan view, where a proportion of (a) a repeat pitch of the fillers after thermocompression bonding under a thermocompression bonding condition with the filler-containing film held between smooth surfaces to (b) a repeat pitch of the fillers before the thermocompression bonding being 300% or less, the method including applying an insulating resin layer-forming composition containing a fine solid to a release substrate to form the insulating resin layer on the release substrate; and pushing the fillers into the insulating resin layer from a surface on a side opposite to the release substrate thereof.

A method includes forming a solder layer on a surface of one or more chips. A lid is positioned over the solder layer on each of the one or more chips. Heat and pressure are applied to melt the solder layer and attach each lid to a corresponding solder layer. The solder layer has a thermal conductivity of 50 W/mK.

A method includes providing a first substrate having a first bonding surface. The method includes providing a second substrate having a second bonding surface. The method includes coupling a metal-containing precursor to the first bonding surface and the second bonding surface. The method includes activating the metal-containing precursor on the first bonding surface and the second bonding surface. The method further includes chemically reacting the activated metal-containing precursor on the first bonding surface and the second bonding surface to form an interface between the first substrate and the second substrate.

Disclosed is a jointed body wherein multiple base members are jointed to each other through a jointing layer, and at least one of the base members is a base member of a ceramic material, semiconductor or glass. The joint material layer contains a metal and an oxide. The oxide contains V and Te, and is present between the metal and the base members. Disclosed is also a joint material in the form of a paste containing an oxide glass containing V and Te, metal particles, and a solvent; in the form of a foil piece or plate in which particles of an oxide glass containing V and Te are embedded; or in the form of a foil piece or plate containing a layer of an oxide glass containing V and Te, and a layer of a metal.

Disclosed is a jointed body wherein multiple base members are jointed to each other through a jointing layer, and at least one of the base members is a base member of a ceramic material, semiconductor or glass. The joint material layer contains a metal and an oxide. The oxide contains V and Te, and is present between the metal and the base members. Disclosed is also a joint material in the form of a paste containing an oxide glass containing V and Te, metal particles, and a solvent; in the form of a foil piece or plate in which particles of an oxide glass containing V and Te are embedded; or in the form of a foil piece or plate containing a layer of an oxide glass containing V and Te, and a layer of a metal.

Disclosed herein are microelectronic structures including bridges, as well as related assemblies and methods. In some embodiments, a microelectronic structure may include a substrate and a bridge.