In an embodiment, a device includes: a first device including: an integrated circuit device having a first connector; a first photosensitive adhesive layer on the integrated circuit device; and a first conductive layer on the first connector, the first photosensitive adhesive layer surrounding the first conductive layer; a second device including: an interposer having a second connector; a second photosensitive adhesive layer on the interposer, the second photosensitive adhesive layer physically connected to the first photosensitive adhesive layer; and a second conductive layer on the second connector, the second photosensitive adhesive layer surrounding the second conductive layer; and a conductive connector bonding the first and second conductive layers, the conductive connector surrounded by an air gap.

In some embodiments, the present disclosure relates to an integrated chip (IC), including a substrate, a first die disposed over the substrate, a metal wire attached to a frontside of the first die, and a first plurality of die stopper bumps disposed along a backside of the first die and configured to control an angle of operation of the first die. The first plurality of die stopper bumps directly contacts a backside surface of the first die.

A semiconductor package having a fillet is provided. The semiconductor package includes a trace disposed within a solder mask that has a top surface. A first die is over the solder mask and mechanically couples with the trace. A first adhesive is between the trace and the first die where sides of the first die and the first adhesive define a die edge. The semiconductor package includes a fillet adjacent the die edge and a second die above the first die. The semiconductor package also includes a second adhesive having a bottom surface where the second adhesive is between the first die and the second die. The solder mask top surface, the first die surface, and the second adhesive bottom surface define a cavity where the fillet is within the cavity at the die edge.

Microelectronic assemblies, and related devices and methods, are disclosed herein. For example, in some embodiments, a microelectronic assembly may include a package substrate having a first surface and an opposing second surface, and a die secured to the package substrate, wherein the die has a first surface and an opposing second surface, the die has first conductive contacts at the first surface and second conductive contacts at the second surface, and the first conductive contacts are coupled to conductive pathways in the package substrate by first non-solder interconnects.

An electronic substrate and an electronic device are provided. The electronic substrate includes a base, a conductive electrode, and a first layer. The conductive electrode and the first layer are disposed on the base, the first layer surrounds the conductive electrode and overlaps an edge portion of the conductive electrode. In a cross-sectional view, the first layer is divided into a first part and a second part, the conductive electrode is located between the first part and the second part, and a width of the first part is different from a width of the second part.

A WBGA package and a method of manufacturing a WBGA package are provided. The WBGA package includes a first substrate having a first through hole and a second substrate having a second through hole over the first through hole of the first substrate. The WBGA package also includes an electronic component having an active surface over the second through hole of the second substrate.

A WBGA package and a method of manufacturing a WBGA package are provided. The WBGA package includes a first substrate having a first through hole and a second substrate having a second through hole over the first through hole of the first substrate. The WBGA package also includes an electronic component having an active surface over the second through hole of the second substrate.

A semiconductor package structure includes a substrate, a first semiconductor and a second semiconductor over the substrate, and a multi-TIM structure disposed over the first semiconductor die and the second semiconductor die. The first semiconductor die includes a first heat output and the second semiconductor die includes a second heat output less than the first heat output. The multi-TIM structure includes a first TIM layer disposed over at least a portion of the first semiconductor die and a second TIM layer. A thermal conductivity of the first TIM layer is higher than a thermal conductivity of the second TIM layer. The first TIM layer covers the first semiconductor die.

A metal mask is disposed on a copper base plate. A solder paste is introduced into each of a plurality of openings in the metal mask, to thereby form a pattern of the solder paste on each of copper plates of the copper base plate. A semiconductor element and a conductive component are placed on the respective patterns of the solder pastes. A metal mask is disposed on the copper base plate. Then, a solder paste is introduced into each of a plurality of openings in the metal mask, to thereby form a pattern of the solder paste covering each of the semiconductor element and the conductive component. A large-capacity relay board is disposed so as to come into contact with a corresponding pattern of the solder paste. A power semiconductor device is completed by performing heat treatment under a temperature condition of 200 C. or higher.

Embodiments of the present disclosure are directed towards techniques and configurations for layered interconnect structures for bridge interconnection in integrated circuit assemblies. In one embodiment, an apparatus may include a substrate and a bridge embedded in the substrate. The bridge may be configured to route electrical signals between two dies. An interconnect structure, electrically coupled with the bridge, may include a via structure including a first conductive material, a barrier layer including a second conductive material disposed on the via structure, and a solderable material including a third conductive material disposed on the barrier layer. The first conductive material, the second conductive material, and the third conductive material may have different chemical composition. Other embodiments may be described and/or claimed.