In an embodiment a carrier includes a shaped body, a lead frame, a first electrode and a second electrode, wherein the first electrode includes a first subregion of the lead frame, a second subregion of the lead frame, and an electrical connection connecting the first subregion to the second subregion, wherein the first subregion is laterally spaced from the second subregion by an intermediate region, wherein the lead frame has at least one subsection, which is located at least in places in the intermediate region and thus in a lateral direction between the first subregion and the second subregion of the first electrode, wherein the intermediate region is at least partially filled by the shaped body or directly adjoins the shaped body, the electrical connection being embedded in the shaped body, and wherein the subsection of the lead frame is neither a subregion of the first electrode nor a subregion of the second electrode.

A thermal management solution may be provided for a microelectronic system including a flexible integrated heat spreader, wherein the flexible integrated heat spreader may comprise a plurality of thermally conductive structures having a flexible thermally conductive film attached to and extending between each of the plurality of thermally conductive structures. The flexible integrated heat spreader may be incorporated into multi-chip package by providing a microelectronic substrate having a plurality of microelectronic devices attached thereto and by thermally contacting each of the plurality of thermally conductive structures of the flexible integrated heat spreader to its respective microelectronic device on the microelectronic substrate.

The invention relates to a method for electrically contacting a component (10) (for example a power component and/or a (semiconductor) component having at least one transistor, preferably an IGBT (insulated-gate bipolar transistor)) having at least one contact (40, 50), at least one open-pored contact piece (60, 70) is galvanically (electrochemically or free of external current) connected to at least one contact (40, 50). In this way, a component module is achieved. The contact (40, 50) is preferably a flat part or has a contact surface, the largest planar extent thereof being greater than an extension of the contact (40, 50) perpendicular to said contact surface. The temperature of the galvanic connection is at most 100 C., preferably at most 60 C., advantageously at most 20 C. and ideally at most 5 C. and/or deviates from the operating temperature of the component by at most 50 C., preferably by at most 20 C., in particular by at most 10 C. and ideally by at most 5 C., preferably by at most 2 C. The component (10) can be contacted by means of the contact piece (60, 70) with a further component, a current conductor and/or a substrate (90). Preferably, a component (10) having two contacts (40, 50) on opposite sides of the component (10) is used, wherein at least one open-pored contact piece (60, 70) is galvanically connected to each contact (40, 50).

The invention relates to a method for electrically contacting a component (10) (for example a power component and/or a (semiconductor) component having at least one transistor, preferably an IGBT (insulated-gate bipolar transistor)) having at least one contact (40, 50), at least one open-pored contact piece (60, 70) is galvanically (electrochemically or free of external current) connected to at least one contact (40, 50). In this way, a component module is achieved. The contact (40, 50) is preferably a flat part or has a contact surface, the largest planar extent thereof being greater than an extension of the contact (40, 50) perpendicular to said contact surface. The temperature of the galvanic connection is at most 100 C., preferably at most 60 C., advantageously at most 20 C. and ideally at most 5 C. and/or deviates from the operating temperature of the component by at most 50 C., preferably by at most 20 C., in particular by at most 10 C. and ideally by at most 5 C., preferably by at most 2 C. The component (10) can be contacted by means of the contact piece (60, 70) with a further component, a current conductor and/or a substrate (90). Preferably, a component (10) having two contacts (40, 50) on opposite sides of the component (10) is used, wherein at least one open-pored contact piece (60, 70) is galvanically connected to each contact (40, 50).

A package and electronic device are disclosed. In one example, the electronic device comprises a mounting base, an oblong electric connection element, and a package mounted on the mounting base and comprising a carrier, electronic components mounted on the carrier, and an encapsulant at least partially encapsulating the carrier and the electronic components. A clip is connected to upper main surfaces of the electronic components. The encapsulant partially encapsulates the clip so that an exposed surface of the clip is directly electrically connected with the oblong electric connection element extending along the mounting base.

A power module providing an improved manufacture yield and having an ensured stable joint strength and accordingly improved reliability is provided. The power module includes: a base portion having one surface on which an electrode portion is formed; a conductor portion disposed to face the one surface of the base portion on which the electrode portion is formed, for making electrical connection with the outside; and an interconnect portion connected to the electrode portion formed on the one surface of the base portion and to the surface of the conductor portion facing the one surface of the base portion for electrically connecting the electrode portion to the conductor portion.

There is disclosed a clip for a semi-conductor device. The clip is provided with a plurality of holes. The plurality of holes define a hole density of at least 4 holes/mm.sup.2.

A power module includes: a first metal brazed substrate; a chipset disposed on the first metal brazed substrate, where the chipset includes at least two chips; and a clip, where the clip covers a side, away from the first metal brazed substrate, of the chipset. Each connecting unit is electrically connected to a corresponding chip. Every two adjacent connecting units are connected along a first direction through a body. Each connecting arm is arranged with respect to two adjacent chips in the chipset. The connecting arm is connected to the first metal brazed substrate. A shortest distance between the connecting arm and one of the two adjacent chips is a first shortest distance, a shortest distance between the connecting arm and the other of the two adjacent chips is a second shortest distance. A difference between the first shortest distance and the second shortest distance falls within a preset threshold.

A method includes providing a plurality of semiconductor devices on a semiconductor structure, providing a top side metallization on a first side of the semiconductor structure, wherein the top side metallization comprises a plurality of bond pads on each of the semiconductor devices, and providing a back side metallization on a second side of the semiconductor structure opposite the first side of the semiconductor structure. The back side metallization is not provided on portions of the second side of the semiconductor structure corresponding to dicing streets between the semiconductor devices.

A substrate assembly may include a power substrate, a chip, a clip, and a trimetal. The power substrate has a first direct copper bonded (DCB) surface connected to a ceramic tile. The chip is soldered onto the first DCB surface. The clip is attached to the power substrate and has a foot at one end and a recessed area at the other, opposite end. The foot is connected to the power substrate. The trimetal has a base, a trapezoid structure, and a clip portion. The base is soldered to the chip. The trapezoid structure is located above the base. The clip portion is located above the trapezoid structure and includes a projecting area. The recessed area of the clip fits into the projecting area of the trimetal.