H01L2224/37099

Packaging structure
09748165 · 2017-08-29 · ·

A packaging structure includes a lead frame, a chip, and a packaging material. The lead frame has a pair of opposed first surface and second surface, and has a first recessed region located on the second surface. The chip has a pair of opposed first surface and second surface. The first surface of the chip is fixed on the first recessed region. The packaging material surrounds the lead frame and the chip. The second surface of the chip is exposed from the packaging material, and the first surface of the lead frame is exposed from the packaging material.

Packaging structure
09748165 · 2017-08-29 · ·

A packaging structure includes a lead frame, a chip, and a packaging material. The lead frame has a pair of opposed first surface and second surface, and has a first recessed region located on the second surface. The chip has a pair of opposed first surface and second surface. The first surface of the chip is fixed on the first recessed region. The packaging material surrounds the lead frame and the chip. The second surface of the chip is exposed from the packaging material, and the first surface of the lead frame is exposed from the packaging material.

Semiconductor device

Provided is a semiconductor device stabilizing bond properties between an electrode terminal provided on a case and an internal wiring connected to a semiconductor element. A semiconductor device includes a base part, a semiconductor element, an electrode terminal, an insulating block, and an internal wiring. The semiconductor element is mounted on the base part. The electrode terminal is held by a case surrounding an outer periphery of the semiconductor element. An end portion of the electrode terminal protrudes toward an inner side of the case. The insulating block is provided on the base part between the semiconductor element and the case. In the internal wiring, one end portion is bonded to the end portion of the electrode terminal on the insulating block, and part of a region extending from the one end portion to the other end portion is bonded to the semiconductor element.

Laser welding machine and laser welding method using the same

A laser welding machine includes: an elevator that is capable of sliding an elevating platform; a pressing actuator that is fixed to the elevating platform at a base part of the pressing actuator and has a tip slidably connected to the base part and pressing a conductive upper terminal toward a conductive lower terminal; a laser oscillator; a machining optical device that is fixed to the elevating platform and has a lens to focus the laser light emitted from the laser oscillator; a position detector that detects a vertical positioning of the pressing actuator; a counter that receives an output of the position detector and delivers position information; and a control circuit that controls, based on the received signal from the counter, the elevator, the pressing actuator, and the machining optical device, and controls operation of the laser oscillator.

Laser welding machine and laser welding method using the same

A laser welding machine includes: an elevator that is capable of sliding an elevating platform; a pressing actuator that is fixed to the elevating platform at a base part of the pressing actuator and has a tip slidably connected to the base part and pressing a conductive upper terminal toward a conductive lower terminal; a laser oscillator; a machining optical device that is fixed to the elevating platform and has a lens to focus the laser light emitted from the laser oscillator; a position detector that detects a vertical positioning of the pressing actuator; a counter that receives an output of the position detector and delivers position information; and a control circuit that controls, based on the received signal from the counter, the elevator, the pressing actuator, and the machining optical device, and controls operation of the laser oscillator.

Power semiconductor device and power conversion device

A semiconductor module includes a first power semiconductor element having a first surface and a second surface. The semiconductor module also includes a second power semiconductor element having a first surface and a second surface. The semiconductor module also includes first, second, third, and fourth conductor plates, and a connecting part. The connecting part is integrally formed with the second conductor plate, extends toward the third conductor plate, and is connected to the third conductor plate.

Power semiconductor device and power conversion device

A semiconductor module includes a first power semiconductor element having a first surface and a second surface. The semiconductor module also includes a second power semiconductor element having a first surface and a second surface. The semiconductor module also includes first, second, third, and fourth conductor plates, and a connecting part. The connecting part is integrally formed with the second conductor plate, extends toward the third conductor plate, and is connected to the third conductor plate.

METHOD FOR ATTACHING A FIRST CONNECTION PARTNER TO A SECOND CONNECTION PARTNER
20220310435 · 2022-09-29 ·

A method includes forming a first tacking layer on a first connection partner, arranging a first layer on the first tacking layer, forming a second tacking layer on the first layer, arranging a second connection partner on the second tacking layer, heating the tacking layers and first layer, and pressing the first connection partner towards the second connection partner, with the first layer arranged between the connection partners, such that a permanent mechanical connection is formed between the connection partners. Either the tacking layers each include a second material evenly distributed within a first material, the second material being configured to act as or to release a reducing agent, or the tacking layers each include a mixture of at least a third material and a fourth material, the materials in the mixture chemically reacting with each other under the influence of heat such that a reducing agent is formed.

METHOD FOR ATTACHING A FIRST CONNECTION PARTNER TO A SECOND CONNECTION PARTNER
20220310435 · 2022-09-29 ·

A method includes forming a first tacking layer on a first connection partner, arranging a first layer on the first tacking layer, forming a second tacking layer on the first layer, arranging a second connection partner on the second tacking layer, heating the tacking layers and first layer, and pressing the first connection partner towards the second connection partner, with the first layer arranged between the connection partners, such that a permanent mechanical connection is formed between the connection partners. Either the tacking layers each include a second material evenly distributed within a first material, the second material being configured to act as or to release a reducing agent, or the tacking layers each include a mixture of at least a third material and a fourth material, the materials in the mixture chemically reacting with each other under the influence of heat such that a reducing agent is formed.

Strip testing of semiconductor devices

A strip of semiconductor devices includes a plurality of leadframes electrically isolated from each other, a plurality of semiconductor chips, and an encapsulation material. Each leadframe has a first surface and a second surface opposite to the first surface. At least one semiconductor chip of the plurality of semiconductor chips is electrically coupled to the first surface of each leadframe. The encapsulation material encapsulates each semiconductor chip and at least portions of each leadframe.