A semiconductor device comprises: a ceramic substrate having conductor layers on both surfaces thereof; a semiconductor element joined to the upper surface conductor layer of the ceramic substrate; a frame member arranged on the upper surface conductor layer so as to surround a side surface of the semiconductor element; and an electrode, which is joined to an upper portion of the semiconductor element via a second fixing layer, and has fitting portions on a side surface of the electrode. On an inner wall of the frame member, fitting portions to be fitted to the fitting portions of the electrode and four positioning portions extending from the inner wall of the frame member to the side surfaces of the electrode are formed.

A package structure includes a first insulation layer, a first redistribution structure, at least one electronic component, a second redistribution structure, a second insulation layer, a first heat spreader, a heat dissipation substrate, a second heat spreader and plural thermal conduction structures. A part of the second redistribution structure is disposed on a part of a top surface of the first insulation layer, and the other part of the second redistribution is located in the first insulation layer. At least one of the conducting terminals is connected with the second redistribution structure. At least one of the thermal conduction structures is connected with at least one of the first redistribution structure and the second redistribution structure, and the thermal conduction structures are respectively extended outwardly from the opposite sides of the first insulation layer to form pins.

Provided is a semiconductor package modularized and manufactured by preparing a main block for putting on a semiconductor chip, an insulator, and one or more sub block, preparing the semiconductor chip, preparing an adhesive used in attaching the semiconductor chip, attaching the semiconductor chip to an upper surface or upper and lower surfaces of the main block, performing an electrical connection of the semiconductor chip, preparing a substrate comprising a pattern enabling an electrical connection and vertically attaching one side of the main block to the pattern of the substrate to enable an electrical connection. In the semiconductor package above, an accumulation rate increases on the substrate due to a vertically arranged structure of the semiconductor chips and a heat emission area is enlarged to improve a heat emission effect.

A semiconductor device includes: a substrate having an obverse surface; a first wiring layer on the obverse surface; a second wiring layer on the obverse surface, separated from the first wiring layer; a first semiconductor element having mutually opposite first obverse electrode and first reverse electrode, with the first reverse electrode bonded to the first wiring layer; a second semiconductor element having mutually opposite second obverse electrode and second reverse electrode, with the second reverse electrode bonded to the second wiring layer; and a conductive member separated from the substrate and bonded to the first and the second obverse electrodes. The first obverse electrode and the second obverse electrode have different polarities. The substrate includes an exposed portion between the first wiring layer and the second wiring layer. The conductive member overlaps with the exposed portion as viewed in the thickness direction of the substrate.

In some examples, a direct current (DC)-DC power converter package comprises a controller, a conductive member, and a first field effect transistor (FET) coupled to the controller and having a first source and a first drain, the first FET coupled to a first portion of the conductive member. The package also comprises a second FET coupled to the controller and having a second source and a second drain, the second FET coupled to a second portion of the conductive member, the first and second portions of the conductive member being non-overlapping in a horizontal plane. The first and second FETs are non-overlapping.

A package structure includes a first insulation layer, a first re-distribution block, at least one electronic component, a second re-distribution block, a second insulation layer, a first heat spreader, a heat dissipation substrate, a second heat spreader and plural thermal conduction structures. A part of the second re-distribution block is disposed on a part of a top surface of the first insulation layer, and the other part of the second re-distribution block is located in the first insulation layer. At least one of the conducting terminals is connected with the second re-distribution block. At least one of the thermal conduction structures is connected with at least one of the first re-distribution block and the second re-distribution block, and the thermal conduction structures are respectively extended outwardly from the opposite sides of the first insulation layer to form pins.

Power amplifier electronics for controlling application of radio frequency (RF) energy generated using solid state electronic components may further be configured to control application of RF energy in cycles between high and low powers. The power amplifier electronics may include a semiconductor die on which one or more RF power transistors are fabricated, an output matching network configured to provide impedance matching between the semiconductor die and external components operably coupled to an output tab, and bonding ribbon bonded at terminal ends thereof to operably couple the one or more RF power transistors of the semiconductor die to the output matching network. The bonding ribbon may have a width of greater than about five times a thickness of the bonding ribbon.

A semiconductor device comprises: a ceramic substrate having conductor layers on both surfaces thereof; a semiconductor element joined to the upper surface conductor layer of the ceramic substrate; a frame member arranged on the upper surface conductor layer so as to surround a side surface of the semiconductor element; and an electrode, which is joined to an upper portion of the semiconductor element via a second fixing layer, and has fitting portions on a side surface of the electrode. On an inner wall of the frame member, fitting portions to be fitted to the fitting portions of the electrode and four positioning portions extending from the inner wall of the frame member to the side surfaces of the electrode are formed.

In a semiconductor module, first and second semiconductor chips each include a transistor and a temperature-detecting diode connected between first and second control pads. The first control pad of the first semiconductor chip is connected to a first control terminal, the second control pad of the first semiconductor chip and the first control pad of the second semiconductor chip are connected to a second control terminal, and the second control pad of the second semiconductor chip is connected to a third control terminal.

An electrical circuit body includes a power semiconductor element joined to one face of a conductor plate, a sheet member including an insulating layer joined to the other face of the conductor plate, a sealing member integrally sealing the sheet member, the conductor plate, and the power semiconductor element in a state where a face, of the sheet member, opposite to a face joined to the conductor plate is exposed, and a cooling member bonded to the opposite face of the sheet member via a heat conduction member, wherein the sealing member has a recess along an outer edge of the sheet member on a surface where the sheet member is exposed, the recess being located outside the sheet member.