A semiconductor device includes a semiconductor element, a first lead supporting the semiconductor element, a second lead separated from the first lead, and a connection lead electrically connecting the semiconductor element to the second lead. The connection lead has an end portion soldered to the second lead. This connection-lead end portion has a first surface facing the semiconductor element and a second surface opposite to the first surface. The second lead is formed with a recess that is open toward the semiconductor element. The recess has a side surface facing the second surface of the connection-lead end portion. A solder contact area of the second surface of the connection-lead end portion is larger than a solder contact area of the first surface of the connection-lead end portion.

A semiconductor device includes a semiconductor element, a first lead supporting the semiconductor element, a second lead separated from the first lead, and a connection lead electrically connecting the semiconductor element to the second lead. The connection lead has an end portion soldered to the second lead. This connection-lead end portion has a first surface facing the semiconductor element and a second surface opposite to the first surface. The second lead is formed with a recess that is open toward the semiconductor element. The recess has a side surface facing the second surface of the connection-lead end portion. A solder contact area of the second surface of the connection-lead end portion is larger than a solder contact area of the first surface of the connection-lead end portion.

A clip structure and a semiconductor package using the same include different metals in multiple layers so as to selectively, easily and exactly fix semiconductor chips, which consists of a lightweight material so as to lighten the weight of semiconductor packages and to help reduce manufacturing costs, and which in particular, maintains the width of a self-welding layer consisting of a clip structure so as to help improve the quality of adhesion. That is, according to a clip structure of the present invention, which electrically connects package elements in a semiconductor package, the clip structure includes a main metallic layer that is configured to maintain a shape, and a first functional layer that is piled on one surface of the main metallic layer and consists of a metal different from that of the main metal layer.

An object is to provide a semiconductor device having a plate electrode adapted to a plurality of chips, capable of being produced at low cost, and having high heat cycle property. A semiconductor device according to the present invention includes a plurality of semiconductor chips formed on a substrate, and a plate electrode connecting electrodes of the plurality of semiconductor chips. The plate electrode has half-cut portions formed by half-pressing and the raised sides of the half-cut portions are bonded with the electrodes of the semiconductor chips.

According to one embodiment, a semiconductor device includes: a semiconductor chip including a first surface, a second surface, a first electrode, a second electrode, and a third electrode; a first conductor including a first portion and a first intermediate portion, a second conductor including a third portion, a second intermediate portion, and a fourth portion, and a length of the first intermediate portion in a second direction being longer than a length of the third portion in the second direction; a third conductor provided on a first surface side of the semiconductor chip; a conductive first connector provided between the first intermediate portion of the first conductor and the third portion of the second conductor; a conductive second connector provided between the second electrode and the first portion; and a conductive third connector provided between the third conductor and the first electrode.

A semiconductor module includes a lead including a first bonding portion and a coupling portion extending in a Y direction from the first bonding portion. The first bonding portion has a first width end, and a second width end connected to the coupling portion. The lead has first and second length sides opposite to each other in an X direction. The lead has in the X direction first and second widths at first and second positions, and the second position is away from the first position in the Y direction. In the plan view, the lead has a shape in which the first width is greater than the second width such that positions of the first and second length sides at the second position are respectively located inward in the X direction with respect to positions of the first and second length sides at the first position.

A semiconductor package includes: a leadframe having a die carrier and at least one first lead connected with the die carrier; a semiconductor transistor die connected with the die carrier and having a first surface and a second surface opposite to the first surface, a source pad disposed on the first surface, and a drain pad disposed on the second surface, the first surface facing a bottom side of the semiconductor package and the second surface facing a top side of the package; and a clip. The source pad is connected with the clip by at least one electrical connector.

A clip structure and a semiconductor package using the same include different metals in multiple layers so as to selectively, easily and exactly fix semiconductor chips, which consists of a lightweight material so as to lighten the weight of semiconductor packages and to help reduce manufacturing costs, and which in particular, maintains the width of a self-welding layer consisting of a clip structure so as to help improve the quality of adhesion. That is, according to a clip structure of the present invention, which electrically connects package elements in a semiconductor package, the clip structure includes a main metallic layer that is configured to maintain a shape, and a first functional layer that is piled on one surface of the main metallic layer and consists of a metal different from that of the main metal layer.

A semiconductor device includes: a semiconductor chip; and an Ag fired cap formed so as to cover a source pad electrode formed on the semiconductor chip. The semiconductor chip is disposed on a first substrate electrode, and one end of a Cu wire is bonded onto the Ag fired cap by means of an ultrasonic wave. There is provided a semiconductor device capable of improving a power cycle capability, and a fabrication method of such a semiconductor device.

A microelectronic device includes one or more electronic components attached to a package substrate which has an exposed surface to provide an area for mounting a heatsink. The microelectronic device includes one or more leads that are electrically connected to the electronic component. The lead extends away from the exposed surface of the package substrate. The microelectronic device includes a shielding dielectric material that laterally surrounds the lead and extends over the lead between the lead and the exposed surface of the package substrate. An electronic system includes the microelectronic device and a circuit board electrically connected to the lead. The electronic system also includes a heatsink attached to the exposed surface of the package substrate.