Patent classifications
H01L2224/40991
Electrode connection structure and electrode connection method
An electrode connection structure includes: a first electrode of an electrical circuit; and a second electrode of the electrical circuit that is electrically connected to the first electrode. The first and second electrodes are oppositely disposed in direct or indirect contact with each other. A plated lamination is substantially uniformly formed by plating process from a surface of a contact region and opposed surfaces of the first and second electrodes. A void near the surface of the contact region is filled by formation of the plated lamination. Portions of the plated lamination formed from the opposed surfaces of the first and second electrodes in a region other than the contact region are not joined together.
Semiconductor package and related methods
Implementations of semiconductor packages may include one or more die coupled over a substrate, an electrically conductive spacer coupled over the substrate, and a clip coupled over and to the one or more die and the electrically conductive spacer. The clip may electrically couple the one or more die and the electrically conductive spacer.
PACKAGED POWER ELECTRONIC DEVICE, IN PARTICULAR BRIDGE CIRCUIT COMPRISING POWER TRANSISTORS, AND ASSEMBLING PROCESS THEREOF
The device has a first support element forming a first thermal dissipation surface and carrying a first power component; a second support element forming a second thermal dissipation surface and carrying a second power component, a first contacting element superimposed to the first power component; a second contacting element superimposed to the second power component; a plurality of leads electrically coupled with the power components through the first and/or the second support elements; and a thermally conductive body arranged between the first and the second contacting elements. The first and the second support elements and the first and the second contacting elements are formed by electrically insulating and thermally conductive multilayers.
PACKAGED POWER ELECTRONIC DEVICE, IN PARTICULAR BRIDGE CIRCUIT COMPRISING POWER TRANSISTORS, AND ASSEMBLING PROCESS THEREOF
The device has a first support element forming a first thermal dissipation surface and carrying a first power component; a second support element forming a second thermal dissipation surface and carrying a second power component, a first contacting element superimposed to the first power component; a second contacting element superimposed to the second power component; a plurality of leads electrically coupled with the power components through the first and/or the second support elements; and a thermally conductive body arranged between the first and the second contacting elements. The first and the second support elements and the first and the second contacting elements are formed by electrically insulating and thermally conductive multilayers.
SEMICONDUCTOR PACKAGE AND RELATED METHODS
Implementations of semiconductor packages may include one or more die coupled over a substrate, an electrically conductive spacer coupled over the substrate, and a clip coupled over and to the one or more die and the electrically conductive spacer. The clip may electrically couple the one or more die and the electrically conductive spacer.