An embodiment related to a method for forming a device is disclosed. The method includes providing a package substrate having a first die attach pad (DAP) and a first bond pad, forming a first conductive die-substrate bonding layer on the first DAP, and attaching a first major surface of a first die to the first DAP. The first die includes a first die contact pad on a second major surface of the first die. A first conductive clip-die bonding layer with spacers is formed on the first die contact pad of the first die. A first conductive clip-substrate bonding layer is formed on the first bond pad of the package substrate. The method also includes attaching a first clip bond to the first die and the first bond pad. The first clip bond includes a first horizontal planar portion attached to the first die over the first die contact pad and a second vertical portion attached to the first bond pad.

A semiconductor package includes a leadframe including a die pad and a plurality of lead terminals. A vertical semiconductor device is attached on a first side by a die attach material to the die pad. A first clip is on the first vertical device that is solder connected to a terminal of the first vertical device on a second side opposite to the first side providing a first solder bonded interface, wherein the first clip is connected to at least a first of the lead terminals. The first solder bonded interface includes a first protruding surface standoff therein that extends from a surface on the second side of the first vertical device to physically contact the first clip.

An integrated circuit (IC) package includes a lead frame and a first die attached to the lead frame. The IC package also includes a first clip attached to first die and the lead frame. The IC package further includes a second die attached to first clip and the lead frame. The IC package still further includes a second clip with a clip foot adhered to the lead frame on a first side of the second clip, the second clip extending to and contacting a side of the second die via a layer of solder paste. The second clip includes a sawn or lased edge at a second side of the second clip opposing the first side of the second clip.

An electronic module has a first substrate 11; a second substrate 21 provided in one side of the first substrate 11; and a chip module 100 provided between the first substrate 11 and the second substrate 21. The chip module 100 has an electronic element 13, 23 and a connecting body 60, 70, 80 electrically connected to the electronic element 13, 23. The electronic element 13, 23 extends along a first direction that is a thickness direction of the electronic module.

According to one embodiment, a semiconductor device includes a first semiconductor element, a first element insulating part, and an insulating sealing member. The first semiconductor element includes a first semiconductor chip and a first chip electrode electrically connected to the first semiconductor chip. The first semiconductor chip has a first surface crossing a first direction, a second surface crossing the first direction and distant from the first surface, and a third surface between the first and second surfaces. The first chip electrode is disposed on the first surface. The first element insulating part includes a first portion and a second portion continuous to the first portion. The insulating sealing member includes a third portion and a fourth portion continuous to the third portion. The first portion is between the first surface and the third portion, and the second portion is between the third surface and the fourth portion.

A semiconductor package comprises a first die thermally coupled to a first thermally conductive device. The first thermally conductive device has a first surface exposed to an exterior of the semiconductor package. The package comprises a second die thermally coupled to a second thermally conductive device, the second thermally conductive device having a second surface exposed to an exterior of the semiconductor package. The first and second dies are positioned in different horizontal planes.

An embodiment related to a method for forming a device is disclosed. The method includes providing a package substrate having a first die attach pad (DAP) and a first bond pad, forming a first conductive die-substrate bonding layer on the first DAP, and attaching a first major surface of a first die to the first DAP. The first die includes a first die contact pad on a second major surface of the first die. A first conductive clip-die bonding layer with spacers is formed on the first die contact pad of the first die. A first conductive clip-substrate bonding layer is formed on the first bond pad of the package substrate. The method also includes attaching a first clip bond to the first die and the first bond pad. The first clip bond includes a first horizontal planar portion attached to the first die over the first die contact pad and a second vertical portion attached to the first bond pad.

The present invention relates to a stackable power module, comprising a module body having a top side and a bottom side provided with top and bottom contact pads, each of the top contact pads electrically connected to a corresponding bottom contact pad; at least one power semiconductor device embedded in the module body, at least one conductive structure connecting the power semiconductor device to a respective top and/or bottom contact pad, wherein the at least one conductive structure has a thermal capacity sufficient to take up an amount of heat generated during a switching cycle of the at least one power semiconductor device without increasing temperature above a critical threshold.

In one embodiment, a method can include coupling a gate and a source of a first die to a lead frame. The first die can include the gate and the source that are located on a first surface of the first die and a drain that is located on a second surface of the first die that is opposite the first surface. In addition, the method can include coupling a source of a second die to the drain of the first die. The second die can include a gate and the source that are located on a first surface of the second die and a drain that is located on a second surface of the second die that is opposite the first surface.

An electronic device includes a lead frame, a first clip, a second clip, and a plurality of semiconductor devices. The first clip is stacked with the lead frame. The second clip stacked with the first clip and the lead frame. The second clip includes a first protrusion that engages the first clip and secures the second clip to the first clip. The semiconductor devices are conductively coupled to the lead frame via the first clip and the second clip.