A semiconductor package includes a leadframe including a die pad and a plurality of lead terminals. A vertical semiconductor device is attached on a first side by a die attach material to the die pad. A first clip is on the first vertical device that is solder connected to a terminal of the first vertical device on a second side opposite to the first side providing a first solder bonded interface, wherein the first clip is connected to at least a first of the lead terminals. The first solder bonded interface includes a first protruding surface standoff therein that extends from a surface on the second side of the first vertical device to physically contact the first clip.

A method of semiconductor device packaging to form a packaged semiconductor device includes providing (i) a vertical power semiconductor device die including a semiconductor substrate including a control node, a source or emitter on a top side or on a bottom side of the substrate, and a drain or a collector on another of the top side the bottom side, a backside metal (BSM) layer on the bottom side, and (ii) a leadframe. The leadframe includes a patterned die pad that includes a common continuous base portion and a two-dimensional array of spaced apart posts extending up from the base portion, with a separate solder cap on a top of the posts. The BSM layer is placed on the solder caps, and reflow processing bonds the BSM layer to the solder caps.

A method of semiconductor device packaging to form a packaged semiconductor device includes providing (i) a vertical power semiconductor device die including a semiconductor substrate including a control node, a source or emitter on a top side or on a bottom side of the substrate, and a drain or a collector on another of the top side the bottom side, a backside metal (BSM) layer on the bottom side, and (ii) a leadframe. The leadframe includes a patterned die pad that includes a common continuous base portion and a two-dimensional array of spaced apart posts extending up from the base portion, with a separate solder cap on a top of the posts. The BSM layer is placed on the solder caps, and reflow processing bonds the BSM layer to the solder caps.

An electronic device includes a lead frame, a first clip, a second clip, and a plurality of semiconductor devices. The first clip is stacked with the lead frame. The second clip stacked with the first clip and the lead frame. The second clip includes a first protrusion that engages the first clip and secures the second clip to the first clip. The semiconductor devices are conductively coupled to the lead frame via the first clip and the second clip.

According to one embodiment, a semiconductor device includes a first semiconductor element, a first element insulating part, and an insulating sealing member. The first semiconductor element includes a first semiconductor chip and a first chip electrode electrically connected to the first semiconductor chip. The first semiconductor chip has a first surface crossing a first direction, a second surface crossing the first direction and distant from the first surface, and a third surface between the first and second surfaces. The first chip electrode is disposed on the first surface. The first element insulating part includes a first portion and a second portion continuous to the first portion. The insulating sealing member includes a third portion and a fourth portion continuous to the third portion. The first portion is between the first surface and the third portion, and the second portion is between the third surface and the fourth portion.

A chip package module, including a first conductive frame, a first bare die disposed on the first conductive frame, and a second conductive frame disposed at an interval beside the first conductive frame. The chip package module further includes a first conductive connecting sheet, a second bare die, and a conductive cover plate. The first conductive connecting sheet is connected to a surface of the first bare die away from the first conductive frame, and extends to be lapped on the second conductive frame. The second bare die is laminated on the first bare die and is connected to the first conductive connecting sheet. The conductive cover plate is connected to a surface of the second bare die away from the first conductive frame and extends to be connected to the first conductive frame.

The present invention relates to a stackable power module, comprising a module body having a top side and a bottom side provided with top and bottom contact pads, each of the top contact pads electrically connected to a corresponding bottom contact pad; at least one power semiconductor device embedded in the module body, at least one conductive structure connecting the power semiconductor device to a respective top and/or bottom contact pad, wherein the at least one conductive structure has a thermal capacity sufficient to take up an amount of heat generated during a switching cycle of the at least one power semiconductor device without increasing temperature above a critical threshold.

A semiconductor power arrangement includes a chip carrier having a first surface and a second surface opposite the first surface. The semiconductor power arrangement further includes a plurality of power semiconductor chips attached to the chip carrier, wherein the power semiconductor chips are inclined to the first and/or second surface of the chip carrier.

Provided is a semiconductor package. The semiconductor package includes: a first die that is a monolithic type die, a driver circuit and a low-side output power device formed in the first die; a second die disposed above the first die, the second die comprising a high-side output power device; and a first connection unit disposed between the first die and the second die.

A semiconductor package is disclosed. The semiconductor package includes an electrically conducting carrier having a mounting surface, a first level first semiconductor power device having a first load electrode mounted over the mounting surface of the electrically conducting carrier and having a second load electrode opposite the first electrode. The package further includes a first level second semiconductor power device. A first connection element has a first surface connected to the second load electrode of the first level first semiconductor power device. A second connection element has a first surface connected to the second load electrode of the first level second semiconductor power device. The package includes a second level first semiconductor power device and a second level second semiconductor power device.