A wire and a method of manufacturing are provided the wire for use in an organic light emitting diode device includes three parts, a first part and a third part are located at both ends of the wire respectively and each of the first part and the third part is a single wire, a second part is located between the first part and the third part, and the second part is a composite wire, wherein the composite wire comprises at least two wires. By dividing a middle part of one wire into multiple wires, the purpose of changing a wire width of a single wire is achieved, ductility of the wire can be enhanced, thereby avoiding the occurrence of the problem that the device cannot normally work caused by wire fracture during folding, and improving the using efficiency of the device.

An IC module includes: a substrate that has a first surface and a second surface opposite the first surface and a metal surface at least on the first surface; and an IC chip with both a contact communication function and a contactless communication function, in which a plurality of terminals constituted by the metal surface is formed on the first surface of the substrate, the plurality of terminals containing a first terminal used for contact communication and a second terminal other than the first terminal, and the substrate includes a via formed on an inner surface of a through hole penetrating from the first surface to the second surface and is connected to the first terminal, a metal connection pad extending from the via to a portion, on the second surface, positioned opposite the second terminal overlapping the IC chip when seen from a thickness direction of the substrate.

There is provided with a surface for contacting a wire. At least a part of the surface comprises a surface of a ceramic sintered body containing aluminum oxide as a main ingredient and titanium carbide as an accessory ingredient.

A bonding wire includes a Cu alloy core material, and a Pd coating layer formed on the Cu alloy core material. The bonding wire contains at least one element selected from Ni, Zn, Rh, In, Ir, and Pt. A concentration of the elements in total relative to the entire wire is 0.03% by mass or more and 2% by mass or less. When measuring crystal orientations on a cross-section of the core material in a direction perpendicular to a wire axis of the bonding wire, a crystal orientation <100> angled at 15 degrees or less to a wire axis direction has a proportion of 50% or more among crystal orientations in the wire axis direction. An average crystal grain size in the cross-section of the core material in the direction perpendicular to the wire axis of the bonding wire is 0.9 m or more and 1.3 m or less.

A pillar structure is disposed on a substrate. The pillar structure includes a pad, a metal wire bump, a metal wire, and a metal plating layer. The pad is disposed on the substrate. The metal wire bump is disposed on the pad. The metal wire is connected to the metal wire bump. The metal wire extends in a first extension direction, the substrate extends in a second extension direction, and the first extension direction is perpendicular to the second extension direction. The metal plating layer covers the pad and completely encapsulates the metal wire bump and the metal wire.

The present disclosure relates to techniques for manufacturing a semiconductor package assembly, with a semiconductor die structure mounted to a lead frame having terminals and encapsulated with a molding resin, as well as a semiconductor package assembly obtained with these techniques. An object of the present disclosure is to provide a manufacturing technique that results in a leaded/leadless power/MCD package or power module manufactured with less complex and less time-consuming process steps, and the connecting elements being implemented are of a straightforward design with reduced R.sub.DS(on) characteristic.

In an embodiment a carrier includes a shaped body, a lead frame, a first electrode and a second electrode, wherein the first electrode includes a first subregion of the lead frame, a second subregion of the lead frame, and an electrical connection connecting the first subregion to the second subregion, wherein the first subregion is laterally spaced from the second subregion by an intermediate region, wherein the lead frame has at least one subsection, which is located at least in places in the intermediate region and thus in a lateral direction between the first subregion and the second subregion of the first electrode, wherein the intermediate region is at least partially filled by the shaped body or directly adjoins the shaped body, the electrical connection being embedded in the shaped body, and wherein the subsection of the lead frame is neither a subregion of the first electrode nor a subregion of the second electrode.

There is provided a palladium-coated copper bonding wire that does not cause a shrinkage cavity during first bonding, has high bonding reliability, and is capable of maintaining excellent bonding reliability for a long period of time even in high-temperature and high-humidity environments. A palladium-coated copper bonding wire in which a concentration of palladium is 1.0 mass % or more and 4.0 mass % or less relative to the total of copper, palladium, and a sulfur group element, a total concentration of the sulfur group element is 50 mass ppm or less, and a concentration of sulfur is 5 mass ppm or more and 12 mass ppm or less, a concentration of selenium is 5 mass ppm or more and 20 mass ppm or less, or a concentration of tellurium is 15 mass ppm or more and 50 mass ppm or less, and the palladium-coated copper bonding wire including a palladium-concentrated region with the average concentration of palladium of 6.5 atom % or more and 30.0 atom % or less relative to the total of copper and palladium within a range from a surface of a tip portion of a free air ball formed at a tip of the wire to 5.0 nm or more and 100.0 nm or less.

There is provided a Cu bonding wire having a Pd coating layer on a surface thereof, that improves bonding reliability of a ball bonded part in a high-temperature and high-humidity environment and is suitable for on-vehicle devices. The bonding wire for a semiconductor device includes a Cu alloy core material and a Pd coating layer formed on a surface of the Cu alloy core material, and the bonding wire contains In of 0.011 to 1.2% by mass and has the Pd coating layer of a thickness of 0.015 to 0.150 m. With this configuration, it is able to increase the bonding longevity of a ball bonded part in a high-temperature and high-humidity environment, and thus to improve the bonding reliability. When the Cu alloy core material contains one or more elements of Pt, Pd, Rh and Ni in an amount, for each element, of 0.05 to 1.2% by mass, it is able to increase the reliability of a ball bonded part in a high-temperature environment of 175 C. or more. When an Au skin layer is further formed on a surface of the Pd coating layer, wedge bondability improves.

A bonding wire for a semiconductor device includes a Cu alloy core material and a Pd coating layer formed on a surface thereof. Containing an element that provides bonding reliability in a high-temperature environment improves the bonding reliability of the ball bonded part in high temperature. Furthermore, making an orientation proportion of a crystal orientation <100> angled at 15 degrees or less to a wire longitudinal direction among crystal orientations in the wire longitudinal direction 30% or more when measuring crystal orientations on a cross-section of the core material in a direction perpendicular to a wire axis of the bonding wire, and making an average crystal grain size in the cross-section of the core material in the direction perpendicular to the wire axis of the bonding wire 0.9 to 1.5 m provides a strength ratio of 1.6 or less.