A bonding wire for a semiconductor device, characterized in that the bonding wire includes a Cu alloy core material and a Pd coating layer formed on a surface of the Cu alloy core material, the bonding wire contains an element that provides bonding reliability in a high-temperature environment, and a strength ratio defined by the following Equation (1) is 1.1 to 1.6:

Strength ratio=ultimate strength/0.2% offset yield strength.(1)

The invention relates to a chip arrangement (10) and to a method for forming a contact connection (11) between a chip (18), in particular a power transistor or the like, and a conductor material track (14), the conductor material track being formed on a non-conductive substrate (12), the chip being arranged on the substrate or on a conductor material track (15), a silver paste (29) or a copper paste being applied to each of a chip contact surface (25) of the chip and the conductor material track (28), a contact conductor (30) being immersed into the silver paste or the copper paste on the chip contact surface and into the silver paste or the copper paste on the conductor material track, a solvent contained in the silver paste or the copper paste being at least partially vaporized by heating and the contact connection being formed by sintering the silver paste or the copper paste by means of laser energy.

There is provided with a surface for contacting a wire. At least a part of the surface comprises a surface of a ceramic sintered body containing aluminum oxide as a main ingredient and titanium carbide as an accessory ingredient.

An electronic assembly component may comprise at least one fan-out device comprising a first encapsulant disposed around a memory device or function and a processor device or function, and a fan-out interconnect structure disposed over the first encapsulant and the at least one fan-out device. Input output pads may be disposed over the fan-out interconnect structure. A structural support may comprise electrical routing and structural support pads, the structural support further comprising at least one mounting site to which the at least one fan-out device is coupled. An electrical connector may be configured to electrically couple the input output pads of the at least one fan-out device to the structural support pads. A second encapsulant may be disposed over at least a portion of the at least one fan-out device and the structural support.

An electronic assembly component may comprise at least one fan-out device comprising a first encapsulant disposed around a memory device or function and a processor device or function, and a fan-out interconnect structure disposed over the first encapsulant and the at least one fan-out device. Input output pads may be disposed over the fan-out interconnect structure. A structural support may comprise electrical routing and structural support pads, the structural support further comprising at least one mounting site to which the at least one fan-out device is coupled. An electrical connector may be configured to electrically couple the input output pads of the at least one fan-out device to the structural support pads. A second encapsulant may be disposed over at least a portion of the at least one fan-out device and the structural support.

An assembly may include a base element comprising a base substrate having a frontside with active circuitry and a backside opposite the frontside, a first bonding layer disposed on the frontside of the base substrate and including a signal pad to convey an electrical signal to the active circuitry. The assembly may further include a first functional element comprising a first semiconductor substrate having a frontside with active circuitry and a backside opposite the frontside, a second bonding layer disposed on the frontside of the first semiconductor substrate, and a back surface of the first functional element having a first contact feature to connect to power or ground, wherein the first bonding layer is hybrid bonded to the second bonding layer.

A package structure is provided. The package structure includes a wiring structure, a first element, and a plurality of first wires. The wiring structure has a first recess recessed from a first surface of the wiring structure. The first element is disposed over the first surface of the wiring structure. The first wires are disposed in the first recess and extending in a direction from the wiring structure to the first element. The first wires are configured to reduce an inclination of the first element with respect to the first surface of the wiring structure.

A ball-bond arrangement comprising a bond pad of a semiconductor device and a wire ball-bonded to the bond pad, wherein the wire extending from the bonded ball has a diameter of 15 to 50 m, and comprises a silver-based wire core with a surface, the wire core having a coating layer superimposed on its surface, wherein the coating layer is a double-layer comprised of a 1 to 40 nm thick inner layer of palladium or nickel and an adjacent 20 to 500 nm thick outer layer of gold, and wherein the surface of the bonded ball has a gold coverage of 70 to 100%.

A semiconductor chip includes a semiconductor substrate, an insulation layer positioned on the semiconductor substrate and that includes a plurality of via holes, and a bump positioned within the plurality of via holes and on the insulation layer. Portions of the bump positioned within the plurality of via holes are connected to each other.

A method includes: forming a first photoresist layer on a first insulating layer; forming a first photoresist pattern having first opening patterns using a first exposure mask; etching the first insulating layer using the first photoresist pattern to form first via holes; removing the first photoresist pattern; forming a second photoresist layer on the first insulating layer; forming a second photoresist pattern having second opening patterns using a second exposure mask; etching the first insulating layer using the second photoresist pattern to form second via holes; removing the first photoresist pattern; forming a redistribution wiring layer on the first insulating layer, the redistribution wiring layer having first redistribution wirings connected to first bonding pads under the first insulating layer through the via holes; and mounting a semiconductor chip on the redistribution wiring layer, the semiconductor chip comprising chip pads connected to the first redistribution wirings.