According to one embodiment, a semiconductor device includes a semiconductor element having a substrate with at least two bending portions formed on a first side surface thereof. The two bending portions are displaced from each other in a first direction that is perpendicular to the first side surface of the substrate and parallel to a front surface of the substrate and in a second direction parallel to the front surface of the substrate and perpendicular to a top surface of the substrate. A rearmost portion of the first side surface is substantially perpendicular to the front surface.

A microelectronic device includes a metal layer on a first dielectric layer. An etch stop layer is disposed over the metal layer and on the dielectric layer directly adjacent to the metal layer. The etch stop layer includes a metal oxide, and is less than 10 nanometers thick. A second dielectric layer is disposed over the etch stop layer. The second dielectric layer is removed from an etched region which extends down to the etch stop layer. The etched region extends at least partially over the metal layer. In one version of the microelectronic device, the etch stop layer may extend over the metal layer in the etched region. In another version, the etch stop layer may be removed in the etched region. The microelectronic device is formed by etching the second dielectric layer using a plasma etch process, stopping on the etch stop layer.

A method of manufacturing a bond pad structure may include depositing an aluminum-copper (AlCu) layer over a dielectric layer; and depositing an aluminum-chromium (AlCr) layer directly over the AlCu layer.

A semiconductor device includes a semiconductor body, first to third electrodes provided on the semiconductor body, and a control electrode. The control electrode is provided between the semiconductor body and the first electrode. The semiconductor body includes first to sixth layers. The second layer of a second conductivity type is selectively provided between the first layer of a first conductivity type and the first electrode. The third layer of the first conductivity type is selectively provided between the second layer and the first electrode. The fourth layer of the second conductivity type is provided between the first layer and the second and third electrodes. The fifth layer of the first conductivity type is selectively provided in the fourth layer and electrically connected to the first electrode. The sixth layer of the first conductivity type is provided in the fourth layer, and electrically connected to the third electrode.

A semiconductor device includes a semiconductor body, first to third electrodes provided on the semiconductor body, and a control electrode. The control electrode is provided between the semiconductor body and the first electrode. The semiconductor body includes first to sixth layers. The second layer of a second conductivity type is selectively provided between the first layer of a first conductivity type and the first electrode. The third layer of the first conductivity type is selectively provided between the second layer and the first electrode. The fourth layer of the second conductivity type is provided between the first layer and the second and third electrodes. The fifth layer of the first conductivity type is selectively provided in the fourth layer and electrically connected to the first electrode. The sixth layer of the first conductivity type is provided in the fourth layer, and electrically connected to the third electrode.

According to one embodiment, a semiconductor device includes a support and a stacked body on the support. The stacked body is formed of a plurality of semiconductor chips that are stacked on each other. The stacked body has a lower surface facing the support and an upper surface facing away from the support. A first wire is connected to one of the semiconductor chips in the stack and extends upward from the semiconductor chip to at least the height of the upper surface of the stacked body. A second wire is connected to the support and extends upward from the support to at least the height of the upper surface of the stacked body.

Provided is a semiconductor package including a bonding wire coated with oxide insulation, an electronic system including same, and a battery module including same. The semiconductor package includes: a substrate; a semiconductor chip mounted on the substrate; a bonding wire connecting the substrate and the semiconductor chip and including a metal core portion located on the inside and an oxide insulation coating portion coating the metal core portion; and first fragments made of the same material as the oxide insulation coating portion of the bonding wire and located at a first portion at which the substrate and the bonding wire are connected.

A sensor package comprising a lead frame, a current sensor die, and an interposer. The lead frame includes: (i) a primary conductor, (ii) a plurality of secondary leads, and (iii) a layer of dielectric material that is disposed between the primary conductor and the plurality of secondary leads. The current sensor die includes one or more sensing elements. The current sensor die is configured to measure a level of electrical current through the primary conductor of the lead frame. The interposer is disposed over the layer of dielectric material. The interposer includes a plurality of conductive traces that are configured to couple each of a plurality of terminals of the current sensor die to a respective one of the plurality of secondary leads.

A component such as an interposer or microelectronic element can be fabricated with a set of vertically extending interconnects of wire bond structure. Such method may include forming a structure having wire bonds extending in an axial direction within one of more openings in an element and each wire bond spaced at least partially apart from a wall of the opening within which it extends, the element consisting essentially of a material having a coefficient of thermal expansion (CTE) of less than 10 parts per million per degree Celsius (ppm/ C.). First contacts can then be provided at a first surface of the component and second contacts provided at a second surface of the component facing in a direction opposite from the first surface, the first contacts electrically coupled with the second contacts through the wire bonds.

Provided is a thermally conductive film-like adhesive capable of sufficiently advancing a curing reaction under milder conditions, capable of effectively suppressing residual voids between the adhesive and a wiring board in a semiconductor package to be obtained when used as a die attach film, and capable of obtaining a semiconductor package excellent in heat releasing property inside the package. In addition, provided are a semiconductor package using the thermally conductive film-like adhesive and a method of producing the same.