An LED filament and an LED light bulb applying the same are provided. The LED filament includes a conductive section including a conductor; two or more LED sections connected to each other by the conductive section, and each of the LED sections includes two or more LED chips electrically connected to each other through a wire; two electrodes, electrically connected to the LED section; and a light conversion layer with a top layer and a base layer, covering the LED sections, the conductive section and the two electrodes, and a part of each of the two electrodes is exposed respectively. The LED filament is supplied with electric power no more than 8W, when the LED filament is lit, at least 4 lm of white light is emitted per millimeter of filament length.

Power amplifier electronics for controlling application of radio frequency (RF) energy generated using solid state electronic components may further be configured to control application of RF energy in cycles between high and low powers. The power amplifier electronics may include a semiconductor die on which one or more RF power transistors are fabricated, an output matching network configured to provide impedance matching between the semiconductor die and external components operably coupled to an output tab, and bonding ribbon bonded at terminal ends thereof to operably couple the one or more RF power transistors of the semiconductor die to the output matching network. The bonding ribbon may have a width of greater than about five times a thickness of the bonding ribbon.

Reliability of a semiconductor module is improved. In a resin mold step of assembly of a semiconductor module, an IGBT chip, a diode chip, a control chip, a part of each of chip mounting portions are resin molded so that a back surface of each of the chip mounting portions is exposed from a back surface of a sealing body. After the resin molding, an insulating layer is bonded to the back surface of the sealing body so as to cover each back surface (exposed portion) of the chip mounting portions, and then, a TIM layer is bonded to an insulating layer. Here, a region of the TIM layer in a plan view is included in a region of the insulating layer.

An optical transceiver provides substantial thermal isolation between an IC die and an optical element that is in electrical communication with the IC die. The IC die is further in electrical communication with a substrate that supports the optical element and the IC die. The transceiver includes an IC heat spreader that is configured to dissipate heat generated from the IC die. The IC die and the optical element can be substantially thermally isolated from each other so as to prevent the heat generated from the IC die from causing the optical elements to overheat.

A semiconductor module includes: a circuit board on which a first semiconductor chip and a second semiconductor chip are mounted and includes a first through hole formed with a conductor foil therein; a press-fit terminal that is electrically connected to the conductor foil in the first through hole of the circuit board; and a second resin that is disposed on a surface side and a back surface side of the circuit board. Further, the press-fit terminal is provided with a pressure contact portion which is press-fitted into the first through hole and is electrically connected to the conductor foil in the first through hole, and the second resin on the surface side of the circuit board and the second resin on the back surface side of the circuit board are integrally formed via a second resin that is filled in the first through hole.

First and second circuit patterns (5,6) are provided on an insulating substrate (1). First and second semiconductor chips (7,8) are provided on the first circuit pattern (5). A relay circuit pattern (10) is provided between the first semiconductor chip (7) and the second semiconductor chip (8) on the insulating substrate (1). A wire (11) is continuously connected to the first semiconductor chip (7), the relay circuit pattern (10), the second semiconductor chip (8) and the second circuit pattern (6) which are sequentially arranged in one direction.

The present invention addresses the problem of enlarging a sensing area in an ultrasonic probe so as to achieve a higher definition. This ultrasonic diagnostic equipment is provided with an ultrasonic probe that comprises: a CMUT chip (2a) that has drive electrodes (3e)-(3j), etc., arranged in a grid-like configuration on a rectangular CMUT element section (21); and a CMUT chip (2b) that has drive electrodes (3p)-(3u), etc., arranged in a grid-like configuration on the rectangular CMUT element section (21), that is adjacent to the CMUT chip (2a), and in which the drive electrodes (3e)-(3j) of the adjacent CMUT chip (2a) are electrically connected to the respective drive electrodes (3p)-(3u) via bonding wires (4f)-(4i), etc.

A semiconductor device includes a semiconductor element, a conductive layer, terminals, and a sealing resin. The conductive layer, containing metal particles, is in contact with the reverse surface and the side surface of the semiconductor element. The terminals are spaced apart from and electrically connected to the semiconductor element. The sealing resin covers the semiconductor element. The conductive layer has an edge located outside of the semiconductor element as viewed in plan. Each terminal includes a top surface, a bottom surface, an inner side surface held in contact with the sealing resin, and the terminal is formed with a dent portion recessed from the bottom surface and the inner side surface. The conductive layer and the bottom surface of each terminal are exposed from a bottom surface of the sealing resin.

A method of manufacturing a sensor device (100) comprises providing (200) a package (102) having a first die-receiving subframe volume (104) separated from a second die-receiving subframe volume (106) by a partition wall (116). An elongate sensor element (120) is disposed (202) within the package (102) so as to bridge the first and second subframe volumes (104, 106) and to overlie the partition wall (116). The elongate sensor element (120) resides substantially in the first subframe volume (104) and partially in the second subframe volume (106). The elongate sensor element (120) is electrically connected within the second subframe volume (106).

In a semiconductor module, first and second semiconductor chips each include a transistor and a temperature-detecting diode connected between first and second control pads. The first control pad of the first semiconductor chip is connected to a first control terminal, the second control pad of the first semiconductor chip and the first control pad of the second semiconductor chip are connected to a second control terminal, and the second control pad of the second semiconductor chip is connected to a third control terminal.