A package includes a chip, a wire, a mold layer and a redistribution layer. The chip includes a conductive pad. The wire is bonded to the conductive pad of the chip. The mold layer surrounds the first chip and the wire. The redistribution layer is disposed on the mold layer and contacts an exposed portion of the wire.

An electromagnetic bandgap structure includes a plurality of resonators. Each of the resonators includes a dielectric substrate, a patch conductor formed on an upper surface of the dielectric substrate, and a conductor layer formed on a lower surface of the dielectric substrate. The patch conductor and the conductor layer are electrically connected to each other by via holes penetrating the dielectric substrate. A plurality of long holes and are formed on the lower surface of the dielectric substrate. A long hole conductor layer is formed on an inner wall surface of the long holes and. The conductor layer and the long hole conductor layer are electrically connected to each other to thereby form an integral conductor surface. The via holes are electrically connected to the conductor surface in the long holes and.

A method of forming a contactless transaction card. The method may include providing a card body, defining a window, and attaching an antenna assembly layer to the card body, where the antenna assembly layer includes an antenna, a set of curable connectors, disposed on a set of end regions of the antenna within the window, and a UV-transparent layer, supporting the antenna. The method may include providing a contactless chip module within the window on a first side of the antenna assembly layer, and directing radiation through the UV-transparent layer, wherein the contactless chip module is electrically connected to the antenna via the curable connectors.

Example embodiments relate to an electronic package, to an electronic device comprising such a package, and to a lead frame for manufacturing the electronic package. Some examples may particularly relate to electronic packages in which radiofrequency (RF) circuitry is arranged. According to the example embodiments, a width of the clamping portion is substantially larger than the width of the lead end portion, the width of the clamping portion being chosen such that bending of the inner part and/or body part relative to the outer part during the application of the molding compound was substantially prevented thereby having avoided flash and/or bleed of molding compound onto the inner part.

In this semiconductor device, a positioning protrusion is formed at a side surface of a sealing resin from which one end of a main electrode wire protrudes. Thus, the outer size of the sealing resin can be reduced as compared to a case where a positioning protrusion is formed at the bottom of the sealing resin. In addition, a thickness regulating protrusion is provided with a space from solder. Thus, it is possible to prevent interface separation or crack that would occur starting from a contact part between the thickness regulating protrusion and the solder, whereby the life of a joining part between a semiconductor module and a cooler can be ensured. Accordingly, a semiconductor device having enhanced heat dissipation property and reliability is obtained without increase in the outer size of the semiconductor module.

There is provided a novel Cu bonding wire that achieves a favorable FAB shape and achieve a favorable bond reliability of the 2nd bonding part even in a rigorous high-temperature environment. The bonding wire for semiconductor devices includes a core material of Cu or Cu alloy, and a coating layer having a total concentration of Pd and Ni of 90 atomic% or more formed on a surface of the core material. The bonding wire is characterized in that: in a concentration profile in a depth direction of the wire obtained by performing measurement using Auger electron spectroscopy (AES) so that the number of measurement points in the depth direction is 50 or more for the coating layer, a thickness of the coating layer is 10 nm or more and 130 nm or less, an average value X is 0.2 or more and 35.0 or less where X is defined as an average value of a ratio of a Pd concentration C.sub.Pd (atomic%) to an Ni concentration C.sub.Ni (atomic%), C.sub.Pd/C.sub.Ni, for all measurement points in the coating layer, the total number of measurement points in the coating layer whose absolute deviation from the average value X is 0.3X or less is 50% or more relative to the total number of measurement points in the coating layer, and the bonding wire satisfies at least one of following conditions (i) and (ii): (i) a concentration of In relative to the entire wire is 1 ppm by mass or more and 100 ppm by mass or less; and (ii) a concentration of Ag relative to the entire wire is 1 ppm by mass or more and 500 ppm by mass or less.

A semiconductor device includes an insulating substrate, a semiconductor element joined onto the insulating substrate with a first joining material interposed therebetween, a plurality of support wires that are provided between the semiconductor element and an electrode plate provided above the semiconductor element in contact with the semiconductor element and the electrode plate, and a second joining material that is provided on the semiconductor element and joins the semiconductor element and the electrode plate.

An electromagnetic bandgap structure includes a plurality of resonators. Each of the resonators includes a dielectric substrate, a patch conductor formed on an upper surface of the dielectric substrate, and a conductor layer formed on a lower surface of the dielectric substrate. The patch conductor and the conductor layer are electrically connected to each other by via holes penetrating the dielectric substrate. A plurality of long holes and are formed on the lower surface of the dielectric substrate. A long hole conductor layer is formed on an inner wall surface of the long holes and. The conductor layer and the long hole conductor layer are electrically connected to each other to thereby form an integral conductor surface. The via holes are electrically connected to the conductor surface in the long holes and.

An envelope tracking system has an envelope tracker that is configured to generate a power amplifier supply voltage that changes is relation to an envelope of a radio frequency signal, and a power amplifier comprises at least a first amplification stage having an input terminal receiving a radio frequency (RF) signal to be amplified. The power amplifier has a first coupling unit, and a second coupling unit inductively coupled with the first coupling unit, the second coupling unit provides radio frequency-coupled feedback to the input terminal of the first amplification stage through a radio frequency-coupled feedback path.

There is provided a novel Cu bonding wire that achieves a favorable FAB shape and achieve a favorable bond reliability of the 2nd bonding part even in a rigorous high-temperature environment. The bonding wire for semiconductor devices includes a core material of Cu or Cu alloy, and a coating layer having a total concentration of Pd and Ni of atomic % or more formed on a surface of the core material. The bonding wire is characterized in that: in a concentration profile in a depth direction of the wire obtained by performing measurement using Auger electron spectroscopy (AES) so that the number of measurement points in the depth direction is 50 or more for the coating layer, a thickness of the coating layer is 10 nm or more and 130 nm or less, an average value X is 0.2 or more and 35.0 or less where X is defined as an average value of a ratio of a Pd concentration C.sub.Pd (atomic %) to an Ni concentration C.sub.Ni (atomic %), C.sub.Pd/C.sub.Ni, for all measurement points in the coating layer, the total number of measurement points in the coating layer whose absolute deviation from the average value X is or less is 50% or more relative to the total number of measurement points in the coating layer, and the bonding wire satisfies at least one of following conditions (i) and (ii): (i) a concentration of In relative to the entire wire is 1 ppm by mass or more and 100 ppm by mass or less; and (ii) a concentration of Ag relative to the entire wire is 1 ppm by mass or more and 500 ppm by mass or less.