A bonding wire for a semiconductor device, characterized in that the bonding wire includes a Cu alloy core material and a Pd coating layer formed on a surface of the Cu alloy core material, the bonding wire contains an element that provides bonding reliability in a high-temperature environment, and a strength ratio defined by the following Equation (1) is 1.1 to 1.6:
Strength ratio=ultimate strength/0.2% offset yield strength.(1)

A receiver optical module that receives an optical signal and generating an electrical signal corresponding to the optical signal is disclosed. The module includes a photodiode (PD), a sub-mount, a pre-amplifier, and a stem. The sub-mount, which is made of insulating material, mounts the PD thereon. The pre-amplifier, which receives the photocurrent generated by the PD, mounts the PD through the sub-mount with an adhesive. The pre-amplifier generates an electrical signal corresponding to the photocurrent and has signal pads and other pads. The stem, which mounts the pre-amplifier, provides lead terminals wire-bonded with the signal pads of the pre-amplifier. The signal pads make distances against the sub-mount that are greater than distances from the other pads to the sub-mount.

In a method of manufacturing a semiconductor package, a first semiconductor device is arranged on a package substrate. An electrostatic discharge structure is formed on at least one ground substrate pad exposed from an upper surface of the package substrate. A plurality of second semiconductor devices is stacked on the package substrate and spaced apart from the first semiconductor device, the electrostatic discharge structure being interposed between the first semiconductor device and the plurality of second semiconductor devices. A molding member is formed on the package substrate to cover the first semiconductor device and the plurality of second semiconductor devices.

The reliability of semiconductor device is improved. The method of manufacturing a semiconductor device has a step of performing plasma treatment prior to the wire bonding step, and the surface roughness of the pads after the plasma treatment step is equal to or less than 3.3 nm.

Embodiments of the present invention disclose a computer system having a plurality of quantum circuits arranged in a two-dimensional plane-like structure, the quantum circuits comprising qubits and busses (i.e., qubit-qubit interconnects), and a method of formation therefor. A quantum computer system comprises a plurality of quantum circuits arranged in a two-dimensional pattern. At least one interior quantum circuit, not along the perimeter of the two-dimensional plane of the plurality of quantum circuits, contains a bottom chip, a device layer, a top chip, and a routing layer. A signal wire connects the device layer to the routing layer, wherein the signal wire breaks the two dimensional plane, for example, the signal wire extends into a different plane.

A semiconductor device assembly includes a substrate and a die coupled to the substrate. The die includes a first contact pad electrically coupled to a first circuit on the die including at least one active circuit element, and a second contact pad electrically coupled to a second circuit on the die including only passive circuit elements. The substrate includes a substrate contact electrically coupled to both the first and second contact pads. The semiconductor device assembly can further include a second die including a third contact pad electrically coupled to a third circuit on the second die including at least a second active circuit element, and a fourth contact pad electrically coupled to a fourth circuit on the second die including only passive circuit elements. The substrate contact can be electrically coupled to the third contact pad and electrically disconnected from the fourth contact pad.

Encapsulating a bonded wire with low profile encapsulation includes applying encapsulation over a bonded wire that is connected to a die on a first end and to a circuit component on a second end and truncating a shape of the encapsulation to form a truncated shape.

Embodiments of packaged semiconductor devices and methods of making thereof are provided herein, which include a semiconductor die having a plurality of pads on an active side; a dummy die having a plurality of openings that extend from a first major surface to a second major surface opposite the first major surface, wherein the plurality of openings are aligned with the plurality of pads; and a silicone-based glue attaching the dummy die to the active side of the semiconductor die, wherein a plurality of bondable surfaces of the semiconductor die are exposed through the plurality of openings of the dummy die.

We disclose an Infrared (IR) device comprising a first substrate comprising a first cavity; a dielectric layer disposed on the first substrate; a second substrate disposed on the dielectric layer and on the opposite side of the first substrate, the second substrate having a second cavity. The device further comprises an optically transmissive layer attached to one of the first and second substrates; a further layer provided to another of the first and second substrates so that the IR device is substantially closed. Holes are provided through the dielectric layer so that a pressure in the first cavity is substantially the same level as a pressure in the second cavity.

A semiconductor device provided according to an aspect of the present disclosure includes a semiconductor element, a bonding target, a first wire, a wire strip and a second wire. The bonding target is electrically connected to the semiconductor element. The first wire is made of a first metal. The first wire includes a first bonding portion bonded to the bonding target and a first line portion extending from the first bonding portion. The wire strip is made of the first metal. The wire strip is bonded to the bonding target. The second wire is made of a second metal different from the first metal. The second wire includes a second bonding portion bonded to the bonding target via the wire strip and a second line portion extending from the second bonding portion.