In a RC-IGBT chip, an anode electrode film and an emitter electrode film are arranged with a distance therebetween. The anode electrode film and the emitter electrode film are electrically connected by a wiring conductor having an external impedance and an external impedance. The external impedance and the external impedance include the resistance of the wiring conductor and the inductance of the wiring conductor.

In a RC-IGBT chip, an anode electrode film and an emitter electrode film are arranged with a distance therebetween. The anode electrode film and the emitter electrode film are electrically connected by a wiring conductor having an external impedance and an external impedance. The external impedance and the external impedance include the resistance of the wiring conductor and the inductance of the wiring conductor.

In one example, an electronic device structure includes a substrate having a conductive structure adjacent to a surface. The conductive structure can include a plurality of conductive pads. First and second electronic devices are disposed adjacent to the top surface. The first electronic device is interposed between a first conductive pad and a second conductive pad, and the second electronic device is interposed between the second conductive pad and a third conductive pad. A continuous wire structure including a first bond structure is connected to the first conductive pad, a second bond structure is connected to the second conductive pad, a third bond structure is connected to the third conductive pad, a first wire portion is interconnected between the first bond structure and the second bond structure and disposed to overlie the first electronic device, and a second wire portion is interconnected between the second bond structure and the third bond structure and disposed to overlie the second electronic device. Other examples and related methods are also disclosed herein.

Multi-chip modules may include stacked semiconductor devices having spacers therebetween. Discrete conductive elements may extend over the active surface of an underlying semiconductor device from respective bond pads of the underlying semiconductor device, through a space formed by the spacers, to respective contact areas on a substrate. Each discrete conductive element extending through two side openings opposite one another may extend from a respective centrally located bond pad proximate to a central portion of the active surface of the underlying semiconductor device. Each discrete conductive element extending through another, perpendicular opening may extend from a respective peripheral bond pad located proximate to a peripheral portion of the active surface of the underlying semiconductor device.

An oscillator includes a resonator and an integrated circuit element. The resonator includes a resonator element and a resonator element container accommodating the resonator element. The integrated circuit element includes an inductor. The resonator and the integrated circuit element are stacked on each other. The resonator includes a metal member, and the metal member does not overlap the inductor when viewed in a plan view.

The semiconductor device includes a semiconductor element, a first lead, and a second lead. The semiconductor element has an element obverse surface and an element reverse surface spaced apart from each other in a thickness direction. The semiconductor element includes an electron transit layer disposed between the element obverse surface and the element reverse surface and formed of a nitride semiconductor, a first electrode disposed on the element obverse surface, and a second electrode disposed on the element reverse surface and electrically connected to the first electrode. The semiconductor element is mounted on the first lead, and the second electrode is joined to the first lead. The second lead is electrically connected to the first electrode. The semiconductor element is a transistor. The second lead is spaced apart from the first lead and is configured such that a main current to be subjected to switching flows therethrough.

A semiconductor device is provided, which includes a semiconductor chip; a first current input/output portion that is electrically connected to the semiconductor chip; a second current input/output portion that is electrically connected to the semiconductor chip; three or more conducting portions provided with the semiconductor chip, between the first current input/output portion and the second current input/output portion; and a current path portion having a path through which current is conducted to each of the three or more conducting portions, wherein the current path portion includes a plurality of slits.

A semiconductor device is provided, which includes a semiconductor chip; a first current input/output portion that is electrically connected to the semiconductor chip; a second current input/output portion that is electrically connected to the semiconductor chip; three or more conducting portions provided with the semiconductor chip, between the first current input/output portion and the second current input/output portion; and a current path portion having a path through which current is conducted to each of the three or more conducting portions, wherein the current path portion includes a plurality of slits.

Semiconductor packages with pass-through clock traces and associated devices, systems, and methods are disclosed herein. In one embodiment, a semiconductor device includes a package substrate including a first surface having a plurality of substrate contacts, a first semiconductor die having a lower surface attached to the first surface of the package substrate, and a second semiconductor die stacked on top of the first semiconductor die. The first semiconductor die includes an upper surface including a first conductive contact, and the second semiconductor die includes a second conductive contact. A first electrical connector electrically couples a first one of the plurality of substrate contacts to the first and second conductive contacts, and a second electrical connector electrically couples a second one of the plurality of substrate contacts to the first and second conductive contacts.

A current sensor (current detection device) 100 includes a conductor 10 through which measurement-target current flows, a magnetic sensor 30 that detects magnetic fields generated by current flowing through the conductor and a package 60 that, together with at least part of the conductor, separates the magnetic sensor from the conductor and covers and seals in their outer surfaces. Together with a curved portion 13 of the conductor, the package separates, from the conductor through which measurement-target current flows, the magnetic sensor that detects magnetic fields generated by current flowing through the conductor and covers and seals in their outer surfaces so that an interface that can spread in the package, in which the magnetic sensor is embedded, from its boundaries with it is not formed; therefore, a high withstand voltage can be obtained.