A semiconductor device provided according to an aspect of the present disclosure includes a semiconductor element, a bonding target, a first wire, a wire strip and a second wire. The bonding target is electrically connected to the semiconductor element. The first wire is made of a first metal. The first wire includes a first bonding portion bonded to the bonding target and a first line portion extending from the first bonding portion. The wire strip is made of the first metal. The wire strip is bonded to the bonding target. The second wire is made of a second metal different from the first metal. The second wire includes a second bonding portion bonded to the bonding target via the wire strip and a second line portion extending from the second bonding portion.

A method of forming a microelectronic device structure comprises coiling a portion of a wire up and around at least one sidewall of a structure protruding from a substrate. At least one interface between an upper region of the structure and an upper region of the coiled portion of the wire is welded to form a fused region between the structure and the wire.

A method of forming a microelectronic device structure comprises coiling a portion of a wire up and around at least one sidewall of a structure protruding from a substrate. At least one interface between an upper region of the structure and an upper region of the coiled portion of the wire is welded to form a fused region between the structure and the wire.

The present disclosure provides a semiconductor device for audio. The semiconductor device for audio includes: a semiconductor element having a plurality of electrodes; a plurality of leads; and a plurality of wires, electrically connecting the plurality of electrodes to the plurality of leads. The plurality of wires include: a first wire having a main component of a first metal; and a second wire having a main component of a second metal different from the first metal.

A semiconductor device includes two or more semiconductor elements, a lead with island portions on which the semiconductor elements are mounted, a heat dissipation member for dissipating heat from the island portions, a bonding layer bonding the island portions and the heat dissipation member, and a sealing resin covering the semiconductor elements, the island portions and a part of the heat dissipation member. The bonding layer includes mutually spaced individual regions provided for the island portions, respectively.

A multilayer chipset structure is provided. The chips can be arranged in a stacking structure with multilayer circuit board. Each circuit board is formed with wiring opening and chipset opening. The chipset opening can be arranged with at least one chipset, such as a controller. The different openings cause connecting wires can pass therethrough so as to connect different chips or circuit elements on different layer. By this modularized structure, the multilayer package structure can be formed with a complicated structure in one package so as to reduce the packaging cost effectively. The connecting wires pass through the openings so as to reduce the whole path lengths needed. No complicated wiring is needed. All the conducting wires are at an upper side of the chips. In packaging, it only needs to package the upper side.

The semiconductor device of the present invention is a semiconductor device in which a first semiconductor chip including a first field effect transistor for a high-side switch, a second semiconductor chip including a second field effect transistor for a low-side switch, and a third semiconductor chip including a circuit that controls each of the first and second semiconductor chips are sealed with a sealing portion. A lead electrically connected to a pad of the first semiconductor chip for a source of the first field effect transistor and a lead electrically connected to a back-surface electrode of the second semiconductor chip for a drain of the second field effect transistor are disposed on the same side of the sealing portion in a plan view.

A semiconductor device has a configuration in which a high-side module portion and a low-side module portion overlap each other. The semiconductor device further includes a control-side frame extending across the high-side module portion and the low-side module portion, and having a high-side integrated circuit and a low-side integrated circuit placed thereon. The high-side integrated circuit of the high-side module portion and the low-side integrated circuit of the low-side module portion are placed on one main surface of the control-side frame. At a boundary between the high-side module portion and the low-side module portion, the control-side frame is bent such that the high-side semiconductor chip and the low-side semiconductor chip face each other.

A semiconductor device includes a first lead, a second lead, a third lead, a semiconductor element mounted on the third lead, a first wire, and a second wire. The first lead includes a first pad portion, and a first terminal for measuring a temperature. The second lead includes a second pad portion, and a second terminal portion for measuring a temperature. The semiconductor element includes an element obverse surface, and a first electrode arranged on the element obverse surface. The first wire and the second wire are made of metals having different thermoelectric powers. The first wire is connected to the first electrode and the first pad portion. The second wire is connected to the first electrode and the second pad portion.

The third side surface includes inclined surfaces inclined in a direction in which a center in an up-down direction of the third side surface is convex. The mold resin further includes a residual section provided in the center of the third side surface and a dowel section provided between the inclined surface and the residual section. The dowel section projects further in a lateral direction than the inclined surface. The residual section further projects in the lateral direction than the dowel section and has a fracture surface perpendicular to the up-down direction.