A method of forming a microelectronic device structure comprises coiling a portion of a wire up and around at least one sidewall of a structure protruding from a substrate. At least one interface between an upper region of the structure and an upper region of the coiled portion of the wire is welded to form a fused region between the structure and the wire.

A method of forming a microelectronic device structure comprises coiling a portion of a wire up and around at least one sidewall of a structure protruding from a substrate. At least one interface between an upper region of the structure and an upper region of the coiled portion of the wire is welded to form a fused region between the structure and the wire.

An electronic device and method for production is disclosed. One embodiment provides an integrated component having a first layer which is composed of copper or a copper alloy or which contains copper or a copper alloy, and having an electrically conductive second layer, whose material differs from the material of the first layer, and a connection apparatus which is arranged on the first layer and on the second layer.

A semiconductor device includes two or more semiconductor elements, a lead with island portions on which the semiconductor elements are mounted, a heat dissipation member for dissipating heat from the island portions, a bonding layer bonding the island portions and the heat dissipation member, and a sealing resin covering the semiconductor elements, the island portions and a part of the heat dissipation member. The bonding layer includes mutually spaced individual regions provided for the island portions, respectively.

A method of forming a microelectronic device structure comprises coiling a portion of a wire up and around at least one sidewall of a structure protruding from a substrate. At least one interface between an upper region of the structure and an upper region of the coiled portion of the wire is welded to form a fused region between the structure and the wire.

A method of forming a microelectronic device structure comprises coiling a portion of a wire up and around at least one sidewall of a structure protruding from a substrate. At least one interface between an upper region of the structure and an upper region of the coiled portion of the wire is welded to form a fused region between the structure and the wire.

A power semiconductor element is fixed on a die pad of the lead frame. A metal plate is bonded to a lower surface of the die pad via an insulating film. The inner lead etc. are disposed in a cavity between a lower mold and an upper mold and are encapsulated with an encapsulation resin. The lower mold has a stepped portion provided in a bottom surface of the cavity below the inner lead. A height of an upper surface of the stepped portion is larger than a height of an upper surface of the power semiconductor element disposed in the cavity. When an encapsulation resin is injected into the cavity, a lower surface of the metal plate is in contact with the bottom surface of the cavity, and the encapsulation resin flows downward from above the stepped portion toward the upper surface of the power semiconductor element.

The semiconductor device 1 includes an insulating substrate 2, a conductive part 3 that extends in a first direction, a conductive part 4 that is separated in a second direction and extends in the first direction, conductive parts 5 that are lined along the first direction between the part 3 and the part 4, high-side switches 11, 12 and 13, low-side switches 14, 15 and, signal terminals that are arrayed along the first direction, a power supply terminal 21 that is electrically connected to the part 3, a ground terminal 22 that is electrically connected to the part 4, and output terminals 23, 24 and 25 that are electrically connected respectively to the corresponding parts 5, arrayed along the first direction on the other end side of the substrate 2, and provided over a straight line L that passes through the part 4 and extends in the first direction.

A semiconductor device includes a semiconductor element, a lead frame, a conductive member, a resin composition and a sealing resin. The semiconductor element has an element front surface and an element back surface facing away in a first direction. The semiconductor element is mounted on the lead frame. The conductive member is bonded to the lead frame, electrically connecting the semiconductor element and the lead frame. The resin composition covers a bonded region where the conductive member and lead frame are bonded while exposing part of the element front surface. The sealing resin covers part of the lead frame, the semiconductor element, and the resin composition. The resin composition has a greater bonding strength with the lead frame than a bonding strength between the sealing resin and lead frame and a greater bonding strength with the conductive member than a bonding strength between the sealing resin and conductive member.

A semiconductor device includes two or more semiconductor elements, a lead with island portions on which the semiconductor elements are mounted, a heat dissipation member for dissipating heat from the island portions, a bonding layer bonding the island portions and the heat dissipation member, and a sealing resin covering the semiconductor elements, the island portions and a part of the heat dissipation member. The bonding layer includes mutually spaced individual regions provided for the island portions, respectively.