A semiconductor assembly packaging method comprises aligning and attaching at least one first semiconductor device to a first side of an interconnect board by forming a plurality of first alignment solder joints; aligning and attaching at least one second semiconductor device to a second side of the interconnect board by forming a plurality of second alignment solder joints; pressing the at least one first semiconductor device toward the interconnect board while the first alignment solder joints are in a molten or partially molten state to form first interconnect bonds between the at least one first semiconductor device and the interconnect board; and pressing the at least one second semiconductor device toward the interconnect board while the second alignment solder joints are in a molten or partially molten state to form second interconnect bonds between the at least one second semiconductor device and the interconnect board. A semiconductor component is made using the method.

A fabrication method of an electronic device bonding structure includes the following steps. A first electronic component including a first conductive bonding portion is provided. A second electronic component including a second conductive bonding portion is provided. A first organic polymer layer is formed on the first conductive bonding portion. A second organic polymer layer is formed on the second conductive bonding portion. Bonding is performed on the first electronic component and the second electronic component through the first conductive bonding portion and the second conductive bonding portion, such that the first electronic component and the second electronic component are electrically connected. The first organic polymer layer and the second organic polymer layer diffuse into the first conductive bonding portion and the second conductive bonding portion after the bonding. An electronic device bonding structure is also provided.

A semiconductor chip including a semiconductor substrate having a first surface and a second surface and having an active layer in a region adjacent to the first surface, a first through electrode penetrating at least a portion of the semiconductor substrate and connected to the active layer, a second through electrode located at a greater radial location from the center of the semiconductor substrate than the first through electrode, penetrating at least a portion of the semiconductor substrate, and connected to the active layer. The semiconductor chip also including a first chip connection pad having a first height and a first width, located on the second surface of the semiconductor substrate, and connected to the first through electrode, and a second chip connection pad having a second height greater than the first height and a second width greater than the first width, located on the second surface of the semiconductor substrate, and connected to the second through electrode.

Techniques are disclosed for facilitating interconnecting semiconductor devices. In one example, a method of interconnecting a first substrate to a second substrate is provided. The method includes forming a first plurality of contacts on the first substrate. The method further includes forming an insulative layer on the first substrate. The method further includes forming a second plurality of contacts on the second substrate. The method further includes joining the first plurality of contacts to the second plurality of contacts to form interconnects between the first substrate and the second substrate. When the first and second substrates are joined, at least a portion of each of the interconnects is surrounded by the insulative layer. Related systems and devices are also provided.

A semiconductor device includes a first semiconductor chip having a first surface and a second surface; a first adhesive layer on the first surface; a second semiconductor chip that includes a third surface and a fourth surface, and a connection bump on the third surface. The connection bump is coupled to the first adhesive layer. The semiconductor device includes a wiring substrate connected to the connection bump. The semiconductor device includes a first resin layer covering the connection bump between the second semiconductor chip and the wiring substrate, and covers one side surface of the second semiconductor chip connecting the third surface and the fourth surface. The first adhesive layer covers an upper portion of the at least one side surface. The first resin layer covers a lower portion of the at least one side surface. The first adhesive layer and the first resin layer contact each other.

A fabrication method of an electronic device bonding structure includes the following steps. A first electronic component including a first conductive bonding portion is provided. A second electronic component including a second conductive bonding portion is provided. A first organic polymer layer is formed on the first conductive bonding portion. A second organic polymer layer is formed on the second conductive bonding portion. Bonding is performed on the first electronic component and the second electronic component through the first conductive bonding portion and the second conductive bonding portion, such that the first electronic component and the second electronic component are electrically connected. The first organic polymer layer and the second organic polymer layer diffuse into the first conductive bonding portion and the second conductive bonding portion after the bonding. An electronic device bonding structure is also provided.

Disclosed is a semiconductor package comprising a semiconductor chip, a first chip pad on a bottom surface of the semiconductor chip and adjacent to a first lateral surface in a first direction of the semiconductor chip, the first lateral surface separated from the first chip pad from a plan view in a first direction, and a first lead frame coupled to the first chip pad. The first lead frame includes a first segment on a bottom surface of the first chip pad and extending from the first chip pad in a second direction opposite to the first direction and away from the first lateral surface of the semiconductor chip, and a second segment which connects to a first end of the first segment and then extends along the first direction to extend beyond the first lateral surface of the semiconductor chip after passing one side of the first chip pad, when viewed in the plan view.

Embodiments provide a method for packaging a semiconductor, a semiconductor package structure, and a package. The packaging method includes: providing a substrate wafer having a first surface and a second surface arranged opposite to each other, the first surface having a plurality of grooves, a plurality of electrically conductive pillars being provided at a bottom of the groove, and the electrically conductive pillar penetrating through the bottom of the groove to the second surface; providing a plurality of semiconductor die stacks; placing the semiconductor die stack in the groove; and filling an insulating dielectric in a gap between a sidewall of the groove and the semiconductor die stack to form an insulating dielectric layer covering an upper surface of the semiconductor die stack to seal up the semiconductor die stack so as to form the semiconductor package structure.

A semiconductor package structure includes a first package, a second package over the first package, a plurality of connectors between the first package and the second package and a plurality of baffle structures between the first package and the second package. The second package includes a bonding region and a periphery region surrounding the bonding region. The connectors are disposed in the bonding region to provide electrical connections between the first package and the second package. The baffle structures are disposed in the periphery region and are separated from each other.

Methods and system for flip chip alignment for substrate and leadframe applications are disclosed and may include placing a semiconductor die on bond fingers of a metal leadframe, wherein at least two of the bond fingers comprise one or more recessed self-alignment features. A reflow process may be performed on the semiconductor die and leadframe, thereby melting solder bumps on the semiconductor die such that a solder bump may be pulled into each of the recessed self-alignment features and aligning the solder bumps on the semiconductor die to the bond fingers. The recessed self-alignment features may be formed utilizing a chemical etch process or a stamping process. A surface of the recessed self-alignment features or the bond fingers of the metal leadframe may be roughened. A solder paste may be formed in the recessed self-alignment features prior to placing the semiconductor die on the bond fingers of the metal leadframe.