A method of manufacturing a display device includes: immersing a mask including openings, in a solution; seating light-emitting diode chips respectively in the openings of the mask; arranging a first flexible substrate including first wirings thereon, below the mask, and aligning the first wirings to respectively correspond to the openings of the mask; removing from the solution, the first flexible substrate with the first wirings corresponding to the openings of the mask together with the mask with the light-emitting diode chips seated in the openings thereof; bonding the light-emitting diode chips and the first wirings to each other; providing a second flexible substrate including second wirings thereon, and aligning the second wirings to respectively correspond to the light-emitting diode chips; and bonding the light-emitting diode chips and the second wirings to each other, to form the display device.

A method of manufacturing a display device includes: immersing a mask including openings, in a solution; seating light-emitting diode chips respectively in the openings of the mask; arranging a first flexible substrate including first wirings thereon, below the mask, and aligning the first wirings to respectively correspond to the openings of the mask; removing from the solution, the first flexible substrate with the first wirings corresponding to the openings of the mask together with the mask with the light-emitting diode chips seated in the openings thereof; bonding the light-emitting diode chips and the first wirings to each other; providing a second flexible substrate including second wirings thereon, and aligning the second wirings to respectively correspond to the light-emitting diode chips; and bonding the light-emitting diode chips and the second wirings to each other, to form the display device.

Generally discussed herein are systems, methods, and apparatuses that include conductive pillars that are about co-planar. According to an example, a technique can include growing conductive pillars on respective exposed landing pads of a substrate, situating molding material around and on the grown conductive pillars, removing, simultaneously, a portion of the grown conductive pillars and the molding material to make the grown conductive pillars and the molding material about planar, and electrically coupling a die to the conductive pillars.

A semiconductor device includes a semiconductor substrate, a pad electrode formed on the semiconductor substrate, a post electrode formed on the pad electrode and made of a copper film, a solder ball electrode formed on the post electrode and made of ternary alloy containing tin, a terminal connected to the solder ball electrode and formed on a front surface of a wiring board, and a sealing material filling a gap between the semiconductor substrate and the wiring board. The post electrode includes a cylindrical stem portion and an overhanging portion positioned in an upper part of the stem portion and protruding to an outer side of the stem portion, the solder ball electrode is connected to an upper surface of the post electrode over the stem portion and the overhanging portion, and a sidewall of the stem portion contacts with the sealing material over the entire circumference thereof.

A semiconductor device includes a semiconductor substrate, a pad electrode formed on the semiconductor substrate, a post electrode formed on the pad electrode and made of a copper film, a solder ball electrode formed on the post electrode and made of ternary alloy containing tin, a terminal connected to the solder ball electrode and formed on a front surface of a wiring board, and a sealing material filling a gap between the semiconductor substrate and the wiring board. The post electrode includes a cylindrical stem portion and an overhanging portion positioned in an upper part of the stem portion and protruding to an outer side of the stem portion, the solder ball electrode is connected to an upper surface of the post electrode over the stem portion and the overhanging portion, and a sidewall of the stem portion contacts with the sealing material over the entire circumference thereof.

Generally discussed herein are systems, methods, and apparatuses that include conductive pillars that are about co-planar. According to an example, a technique can include growing conductive pillars on respective exposed landing pads of a substrate, situating molding material around and on the grown conductive pillars, removing, simultaneously, a portion of the grown conductive pillars and the molding material to make the grown conductive pillars and the molding material about planar, and electrically coupling a die to the conductive pillars.

Generally discussed herein are systems, methods, and apparatuses that include conductive pillars that are about co-planar. According to an example, a technique can include growing conductive pillars on respective exposed landing pads of a substrate, situating molding material around and on the grown conductive pillars, removing, simultaneously, a portion of the grown conductive pillars and the molding material to make the grown conductive pillars and the molding material about planar, and electrically coupling a die to the conductive pillars.