A light emitting device module includes a substrate, a plurality of light emitting devices mounted on the substrate, an adhesive layer interposed between the substrate and the light emitting device; and bonding wires electrically connecting the plurality of light emitting devices. The substrate includes an outer electrode in at least a partial region, and the adhesive layer has a non-conductive material.

A light emitting device module includes a substrate, a plurality of light emitting devices mounted on the substrate, an adhesive layer interposed between the substrate and the light emitting device; and bonding wires electrically connecting the plurality of light emitting devices. The substrate includes an outer electrode in at least a partial region, and the adhesive layer has a non-conductive material.

An electronic device includes: a first semiconductor die having a metal region; a substrate having a plurality of metal regions; a first soldered joint between the metal region of the first semiconductor die and a first metal region of the substrate, the first soldered joint having one or more intermetallic phases throughout the entire soldered joint, each of the one or more intermetallic phases formed from a solder preform diffused into the metal region of the first semiconductor die and the first metal region of the substrate; and a second semiconductor die soldered to the first or different metal region of the substrate.

An electronic device includes: a first semiconductor die having a metal region; a substrate having a plurality of metal regions; a first soldered joint between the metal region of the first semiconductor die and a first metal region of the substrate, the first soldered joint having one or more intermetallic phases throughout the entire soldered joint, each of the one or more intermetallic phases formed from a solder preform diffused into the metal region of the first semiconductor die and the first metal region of the substrate; and a second semiconductor die soldered to the first or different metal region of the substrate.

A package includes a first die, a second die, a first encapsulant, first through insulating vias (TIV), a second encapsulant, and second TIVs. The second die is stacked on the first die. The first encapsulant laterally encapsulates the first die. The first TIVs are aside the first die. The first TIVs penetrate through the first encapsulant and are electrically floating. The second encapsulant laterally encapsulates the second die. The second TIVs are aside the second die. The second TIVs penetrate through the second encapsulant and are electrically floating. The second TIVs are substantially aligned with the first TIVs.

A package includes a first die, a second die, a first encapsulant, first through insulating vias (TIV), a second encapsulant, and second TIVs. The second die is stacked on the first die. The first encapsulant laterally encapsulates the first die. The first TIVs are aside the first die. The first TIVs penetrate through the first encapsulant and are electrically floating. The second encapsulant laterally encapsulates the second die. The second TIVs are aside the second die. The second TIVs penetrate through the second encapsulant and are electrically floating. The second TIVs are substantially aligned with the first TIVs.

In one example, a semiconductor device comprises an electronic component comprising a component face side, a component base side, a component lateral side connecting the component face side to the component base side, and a component port adjacent to the component face side, wherein the component port comprises a component port face. A clip structure comprises a first clip pad, a second clip pad, a first clip leg connecting the first clip pad to the second clip pad, and a first clip face. An encapsulant covers portions of the electronic component and the clip structure. The encapsulant comprises an encapsulant face, the first clip pad is coupled to the electronic component, and the component port face and the first clip face are exposed from the encapsulant face. Other examples and related methods are also disclosed herein.

In one example, a semiconductor device comprises an electronic component comprising a component face side, a component base side, a component lateral side connecting the component face side to the component base side, and a component port adjacent to the component face side, wherein the component port comprises a component port face. A clip structure comprises a first clip pad, a second clip pad, a first clip leg connecting the first clip pad to the second clip pad, and a first clip face. An encapsulant covers portions of the electronic component and the clip structure. The encapsulant comprises an encapsulant face, the first clip pad is coupled to the electronic component, and the component port face and the first clip face are exposed from the encapsulant face. Other examples and related methods are also disclosed herein.

A light emitting device module includes a substrate, a plurality of light emitting devices mounted on the substrate, an adhesive layer interposed between the substrate and the light emitting device; and bonding wires electrically connecting the plurality of light emitting devices. The substrate includes an outer electrode in at least a partial region, and the adhesive layer has a non-conductive material.

A light emitting device module includes a substrate, a plurality of light emitting devices mounted on the substrate, an adhesive layer interposed between the substrate and the light emitting device; and bonding wires electrically connecting the plurality of light emitting devices. The substrate includes an outer electrode in at least a partial region, and the adhesive layer has a non-conductive material.