Die backside metallization methods and apparatus are disclosed. In one aspect, a method of forming a die involves providing a backside metallization layer on the die prior to attaching the die to a chip carrier. Various possible attaching techniques such as a backside solder, transient liquid phase bonding, or solid state diffusion bonding may be used. The resulting apparatus may have a relatively thin bond layer that has a relatively uniform thickness. The thin bond layer having an essentially constant thickness provides good thermal properties while being resistant to delamination from thermal cycling.

A display panel and method of manufacture are described. In an embodiment, a display substrate includes a pixel area and a non-pixel area. An array of subpixels and corresponding array of bottom electrodes are in the pixel area. An array of micro LED devices are bonded to the array of bottom electrodes. One or more top electrode layers are formed in electrical contact with the array of micro LED devices. In one embodiment a redundant pair of micro LED devices are bonded to the array of bottom electrodes. In one embodiment, the array of micro LED devices are imaged to detect irregularities.

A display panel and method of manufacture are described. In an embodiment, a display substrate includes a pixel area and a non-pixel area. An array of subpixels and corresponding array of bottom electrodes are in the pixel area. An array of micro LED devices are bonded to the array of bottom electrodes. One or more top electrode layers are formed in electrical contact with the array of micro LED devices. In one embodiment a redundant pair of micro LED devices are bonded to the array of bottom electrodes. In one embodiment, the array of micro LED devices are imaged to detect irregularities.

A device package includes a first die directly bonded to a second die at an interface, wherein the interface comprises a conductor-to-conductor bond. The device package further includes an encapsulant surrounding the first die and the second die and a plurality of through vias extending through the encapsulant. The plurality of through vias are disposed adjacent the first die and the second die. The device package further includes a plurality of thermal vias extending through the encapsulant and a redistribution structure electrically connected to the first die, the second die, and the plurality of through vias. The plurality of thermal vias is disposed on a surface of the second die and adjacent the first die.

A semiconductor device according to an embodiment includes a semiconductor layer, a metal layer, and a bonding layer provided between the semiconductor layer and the metal layer, the bonding layer including a plurality of silver particles, and the bonding layer including a region containing gold existing between the plurality of silver particles.

A semiconductor device according to an embodiment includes a semiconductor layer, a metal layer, and a bonding layer provided between the semiconductor layer and the metal layer, the bonding layer including a plurality of silver particles, and the bonding layer including a region containing gold existing between the plurality of silver particles.

A display panel and method of manufacture are described. In an embodiment, a display substrate includes a pixel area and a non-pixel area. An array of subpixels and corresponding array of bottom electrodes are in the pixel area. An array of micro LED devices are bonded to the array of bottom electrodes. One or more top electrode layers are formed in electrical contact with the array of micro LED devices. In one embodiment a redundant pair of micro LED devices are bonded to the array of bottom electrodes. In one embodiment, the array of micro LED devices are imaged to detect irregularities.

A display panel and method of manufacture are described. In an embodiment, a display substrate includes a pixel area and a non-pixel area. An array of subpixels and corresponding array of bottom electrodes are in the pixel area. An array of micro LED devices are bonded to the array of bottom electrodes. One or more top electrode layers are formed in electrical contact with the array of micro LED devices. In one embodiment a redundant pair of micro LED devices are bonded to the array of bottom electrodes. In one embodiment, the array of micro LED devices are imaged to detect irregularities.

A bonding apparatus includes a first holder configured to hold a first substrate divided into multiple chips with a tape and a ring frame therebetween, the first substrate being attached to the tape, and an edge of the tape being attached to the ring frame; a second holder configured to hold a second substrate, which is disposed on an opposite side to the tape with respect to the first substrate therebetween, while maintaining a distance from the first substrate; and a pressing device configured to press the multiple chips one by one with the tape therebetween to press and bond the corresponding chip to the second substrate.

A bonding apparatus includes a first holder configured to hold a first substrate divided into multiple chips with a tape and a ring frame therebetween, the first substrate being attached to the tape, and an edge of the tape being attached to the ring frame; a second holder configured to hold a second substrate, which is disposed on an opposite side to the tape with respect to the first substrate therebetween, while maintaining a distance from the first substrate; and a pressing device configured to press the multiple chips one by one with the tape therebetween to press and bond the corresponding chip to the second substrate.