Disclosed in the present specification is a micro LED display device, and a manufacturing method therefor, the method forming, in advance, an anisotropic conductive adhesive paste layer only on a conductive electrode part of a semiconductor light emitting element and on a peripheral part thereof, and then transferring the anisotropic conductive adhesive paste layer to a wiring substrate, thereby simultaneously performing a transfer step and a stable wiring step.

A bonding apparatus includes an ultrasonic oscillator which generates ultrasonic vibration, a stage disposed under the ultrasonic oscillator, and an embossed sheet disposed between the ultrasonic oscillator and the stage. The embossed sheet includes a body and a plurality of protrusions protruding downward from a lower surface of the body which faces the stage.

A dicing die attach film including a dicing film and a die attach film laminated on the dicing film, in which the die attach film has an arithmetic average roughness Ra1 of from 0.05 to 2.50 μm at a surface in contact with the dicing film, and a value of ratio of Ra1 to an arithmetic average roughness Ra2 at a surface that is of the die attach film and is opposite to the surface in contact with the dicing film is from 1.05 to 28.00.

A dicing die attach film including a dicing film and a die attach film laminated on the dicing film, in which the die attach film has an arithmetic average roughness Ra1 of from 0.05 to 2.50 μm at a surface in contact with the dicing film, and a value of ratio of Ra1 to an arithmetic average roughness Ra2 at a surface that is of the die attach film and is opposite to the surface in contact with the dicing film is from 1.05 to 28.00.

A semiconductor package structure is provided. The semiconductor package structure includes a carrier substrate, an interposer substrate, a semiconductor device, a lid, and a thermal interface material. The interposer substrate is disposed on the carrier substrate. The semiconductor device is disposed on the interposer substrate. The lid is disposed on the carrier substrate to cover the semiconductor device. The thermal interface material is disposed between the lid and the semiconductor device. A first recess is formed on a lower surface of the lid facing the semiconductor device, and the first recess overlaps the semiconductor device in a top view.

A display panel of micro LEDs which provides a means of testing the installed micro LEDs for illumination qualities before final connections are made includes a transparent substrate, a plurality of electrode blocks on the transparent substrate, a plurality of conductive bonding blocks, and the micro LEDs. Each electrode block includes a slit allowing light to pass through. Each bonding block is on a surface of one electrode block away from the transparent substrate and is partially embedded in the slit of one corresponding electrode block. Each micro LED is fixed on one electrode block by a corresponding bonding block and is electrically connected with the electrode block. A method of manufacturing the display panel is further provided.

A device to attract and hold microscopic items such as micro LEDs magnetically rather than by static electricity includes a substrate and a plurality of magnetic units on a surface of the substrate. The magnetic units are spaced apart from each other and are constrained in the size and direction of their individual magnetic fields. Each of the magnetic units includes a magnet and a cladding layer partially covering the magnet. The cladding layer is made of a magnetic material. A side of the magnet away from the substrate is exposed from the cladding layer to attract and hold one micro LED.

Provided is a method for manufacturing a semiconductor device suitable for achieving low wiring resistance between semiconductor elements that is bonded via an adhesive layer and multi-layered. The method according to the present invention is as follows. First, a wafer laminate (W) is prepared, the wafer laminate (W) including a wafer (10) having a circuit forming surface (10a), a wafer (20) having a main surface (20a) and a back surface (20b), and an adhesive layer (30) containing an SiOC-based polymer. Then, a hole (H) is formed in the wafer laminate (W) by etching the wafer laminate (W) from the wafer (20) side via a mask pattern masking a portion of the main surface (20a) side of the wafer (20), the hole (H) extending through the wafer (20) and the adhesive layer (30) and reaching a wiring pattern (12b) in the wafer (10). Then, an insulating film (41) is formed on an inner surface of the hole (H). Then, the insulating film (41) on a bottom surface of the hole (H) is removed. Then, the wafer laminate (W) is subjected to a cleaning treatment (an oxygen plasma treatment and/or an Ar sputtering treatment). Then, a conductive portion is formed in the hole (H).

Flexible devices including conductive traces with enhanced stretchability, and methods of making and using the same are provided. The circuit die is disposed on a flexible substrate. Electrically conductive traces are formed in channels on the flexible substrate to electrically contact with contact pads of the circuit die. A first polymer liquid flows in the channels to cover a free surface of the traces. The circuit die can also be surrounded by a curing product of a second polymer liquid.

Flexible devices including conductive traces with enhanced stretchability, and methods of making and using the same are provided. The circuit die is disposed on a flexible substrate. Electrically conductive traces are formed in channels on the flexible substrate to electrically contact with contact pads of the circuit die. A first polymer liquid flows in the channels to cover a free surface of the traces. The circuit die can also be surrounded by a curing product of a second polymer liquid.