A bonding tool for bonding a first workpiece to a second workpiece on a bonding machine is provided. The bonding tool includes a body portion for bonding the first workpiece to the second workpiece on the bonding machine. The bonding tool also includes a curing system for curing an adhesive provided between the first workpiece and the second workpiece.

A semiconductor package includes spread inhibiting structure to constrain the movement of viscous material during fabrication. In some embodiments, the spread inhibiting structure comprises a recess in an underside of a package lid overlying the die. According to other embodiments, the spread inhibiting structure comprises polymer disposed on the lid underside proximate to a side of the packaged die. According to still other embodiments, the spread inhibiting structure comprises a polymer disposed around the top of the die to serve as a dam and contain spreading. In some embodiments, the viscous material may be a Thermal Integration Material (TIM) in an uncured state, and the polymer may be the TIM in a cured state.

A semiconductor package includes spread inhibiting structure to constrain the movement of viscous material during fabrication. In some embodiments, the spread inhibiting structure comprises a recess in an underside of a package lid overlying the die. According to other embodiments, the spread inhibiting structure comprises polymer disposed on the lid underside proximate to a side of the packaged die. According to still other embodiments, the spread inhibiting structure comprises a polymer disposed around the top of the die to serve as a dam and contain spreading. In some embodiments, the viscous material may be a Thermal Integration Material (TIM) in an uncured state, and the polymer may be the TIM in a cured state.

A method of making an assembly can include juxtaposing a top surface of a first electrically conductive element at a first surface of a first substrate with a top surface of a second electrically conductive element at a major surface of a second substrate. One of: the top surface of the first conductive element can be recessed below the first surface, or the top surface of the second conductive element can be recessed below the major surface. Electrically conductive nanoparticles can be disposed between the top surfaces of the first and second conductive elements. The conductive nanoparticles can have long dimensions smaller than 100 nanometers. The method can also include elevating a temperature at least at interfaces of the juxtaposed first and second conductive elements to a joining temperature at which the conductive nanoparticles can cause metallurgical joints to form between the juxtaposed first and second conductive elements.

A semiconductor device comprises a first substrate; a functional element arranged on a main surface of the first substrate; a terminal connected to an electrode electrically connected to the functional element and arranged on a second substrate different from the first substrate; an insulating portion configured to cover an end of the terminal; and a conductive film arranged on the terminal and the insulating portion and containing a conductive particle, wherein in a section perpendicular to the main surface of the first substrate, the insulating portion includes a top and lateral sides inclined with respect to the top, and a width of the top is smaller than a diameter of the conductive particle.

A display apparatus including a circuit board, at least one LED stack configured to emit light, electrode pads disposed on the at least one LED stack and electrically connected to the at least one LED stack, and electrodes disposed on the electrode pads and electrically connected to the electrode pads, respectively, in which each of the electrodes has a fixed portion that is fixed to one of the electrode pads and an extending portion that is spaced apart from the one of the electrode pads, and the electrodes include at least two metal layers having different thermal expansion coefficients from each other.

A device is provided. The device includes a bridge layer over a first substrate. A first connector electrically connecting the bridge layer to the first substrate. A first die is coupled to the bridge layer and the first substrate, and a second die is coupled to the bridge layer.

A device is provided. The device includes a bridge layer over a first substrate. A first connector electrically connecting the bridge layer to the first substrate. A first die is coupled to the bridge layer and the first substrate, and a second die is coupled to the bridge layer.

Microelectronic assemblies, and related devices and methods, are disclosed herein. For example, in some embodiments, a microelectronic assembly may include a package substrate having a first surface and an opposing second surface, and a die secured to the package substrate, wherein the die has a first surface and an opposing second surface, the die has first conductive contacts at the first surface and second conductive contacts at the second surface, and the first conductive contacts are coupled to conductive pathways in the package substrate by first non-solder interconnects.

Microelectronic assemblies, and related devices and methods, are disclosed herein. For example, in some embodiments, a microelectronic assembly may include a package substrate having a first surface and an opposing second surface, and a die secured to the package substrate, wherein the die has a first surface and an opposing second surface, the die has first conductive contacts at the first surface and second conductive contacts at the second surface, and the first conductive contacts are coupled to conductive pathways in the package substrate by first non-solder interconnects.